4.
    发明专利
    未知

    公开(公告)号:DE3785322D1

    公开(公告)日:1993-05-13

    申请号:DE3785322

    申请日:1987-12-23

    Applicant: IBM

    Abstract: A multi-layer structure that includes a transparent dielectric substrate, a layer of a nickel-containing steel alloy, and a layer of copper and/or chromium. The structure is used as multi-density photomasks for example. The process for fabricating multi-layer structure, like a multi-density photomask comprises: a) providing a transparent dielectric substrate having a steel layer and a layer of a metal, like of copper, thereon with the layer of said steel is deposited on top of said layer of a metal or vice versa; b) providing a layer of photoresist material on top of the structure provided in step (a); c) exposing and developing said layer of photoresist material; d) selectively etching exposed portion of said metal or said steel; e) selectively etching exposed portion of said metal or said steel not etched in step (d); f) exposing and developing photoresist on the said layer of said metal or said steel etched in step (d); g) selectively etching exposed portion of said metal or said steel of step (f); and h) removing the photoresist. t

    7.
    发明专利
    未知

    公开(公告)号:DE69024452T2

    公开(公告)日:1996-07-11

    申请号:DE69024452

    申请日:1990-10-08

    Applicant: IBM

    Abstract: An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: wherein X is CH=CH2 or -(-CH2-)-n0-(-R) with R being H or wherein each R , R and R individually is selected from the group of alkyl, alkenyl, aryl, wherein each R , R and R individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.

    8.
    发明专利
    未知

    公开(公告)号:DE69024452D1

    公开(公告)日:1996-02-08

    申请号:DE69024452

    申请日:1990-10-08

    Applicant: IBM

    Abstract: An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: wherein X is CH=CH2 or -(-CH2-)-n0-(-R) with R being H or wherein each R , R and R individually is selected from the group of alkyl, alkenyl, aryl, wherein each R , R and R individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.

    9.
    发明专利
    未知

    公开(公告)号:DE3785322T2

    公开(公告)日:1993-10-28

    申请号:DE3785322

    申请日:1987-12-23

    Applicant: IBM

    Abstract: A multi-layer structure that includes a transparent dielectric substrate, a layer of a nickel-containing steel alloy, and a layer of copper and/or chromium. The structure is used as multi-density photomasks for example. The process for fabricating multi-layer structure, like a multi-density photomask comprises: a) providing a transparent dielectric substrate having a steel layer and a layer of a metal, like of copper, thereon with the layer of said steel is deposited on top of said layer of a metal or vice versa; b) providing a layer of photoresist material on top of the structure provided in step (a); c) exposing and developing said layer of photoresist material; d) selectively etching exposed portion of said metal or said steel; e) selectively etching exposed portion of said metal or said steel not etched in step (d); f) exposing and developing photoresist on the said layer of said metal or said steel etched in step (d); g) selectively etching exposed portion of said metal or said steel of step (f); and h) removing the photoresist. t

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