-
公开(公告)号：AU5260586A
公开(公告)日：1986-09-25
申请号：AU5260586
申请日：1986-01-22
Applicant: IBM
-
公开(公告)号：BR8600996A
公开(公告)日：1986-11-18
申请号：BR8600996
申请日：1986-03-07
Applicant: IBM
-
公开(公告)号：DE3784961D1
公开(公告)日：1993-04-29
申请号：DE3784961
申请日：1987-04-01
Applicant: IBM
IPC: H01L23/522 , H01L21/48 , H01L21/768 , H05K3/00 , H05K3/40 , H05K3/46 , H01L21/02 , H01L21/90 , H01L23/52
-
公开(公告)号：DE3785322D1
公开(公告)日：1993-05-13
申请号：DE3785322
申请日：1987-12-23
Applicant: IBM
Inventor： FLAGELLO DONIS GEORGE , SHAW JANE MARGARET , WITMAN DAVID FRANK
IPC: G03F1/00 , G03F1/54 , H01L21/027
Abstract: A multi-layer structure that includes a transparent dielectric substrate, a layer of a nickel-containing steel alloy, and a layer of copper and/or chromium. The structure is used as multi-density photomasks for example. The process for fabricating multi-layer structure, like a multi-density photomask comprises: a) providing a transparent dielectric substrate having a steel layer and a layer of a metal, like of copper, thereon with the layer of said steel is deposited on top of said layer of a metal or vice versa; b) providing a layer of photoresist material on top of the structure provided in step (a); c) exposing and developing said layer of photoresist material; d) selectively etching exposed portion of said metal or said steel; e) selectively etching exposed portion of said metal or said steel not etched in step (d); f) exposing and developing photoresist on the said layer of said metal or said steel etched in step (d); g) selectively etching exposed portion of said metal or said steel of step (f); and h) removing the photoresist. t
-
公开(公告)号：AU595127B2
公开(公告)日：1990-03-22
申请号：AU2012588
申请日：1988-07-28
Applicant: IBM
-
Patent Agency Ranking
公开(公告)号：AU576049B2
公开(公告)日：1988-08-11
申请号：AU5260586
申请日：1986-01-22
Applicant: IBM
-
公开(公告)号：DE69024452T2
公开(公告)日：1996-07-11
申请号：DE69024452
申请日：1990-10-08
Applicant: IBM
Inventor： BABICH EDWARD DARKO , GELORME JEFFREY DONALD , HATZAKIS MICHAEL , SHAW JANE MARGARET , STEWART KEVIN JAY , WITMAN DAVID FRANK
IPC: G03F7/031 , C08F2/50 , C08G59/68 , C08G77/14 , C08G77/22 , C08G85/00 , C08L83/04 , C08L83/06 , G03F7/027 , G03F7/029 , G03F7/075
Abstract: An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: wherein X is CH=CH2 or -(-CH2-)-n0-(-R) with R being H or wherein each R , R and R individually is selected from the group of alkyl, alkenyl, aryl, wherein each R , R and R individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.
-
公开(公告)号：DE69024452D1
公开(公告)日：1996-02-08
申请号：DE69024452
申请日：1990-10-08
Applicant: IBM
Inventor： BABICH EDWARD DARKO , GELORME JEFFREY DONALD , HATZAKIS MICHAEL , SHAW JANE MARGARET , STEWART KEVIN JAY , WITMAN DAVID FRANK
IPC: G03F7/031 , C08F2/50 , C08G59/68 , C08G77/14 , C08G77/22 , C08G85/00 , C08L83/04 , C08L83/06 , G03F7/027 , G03F7/029 , G03F7/075
Abstract: An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: wherein X is CH=CH2 or -(-CH2-)-n0-(-R) with R being H or wherein each R , R and R individually is selected from the group of alkyl, alkenyl, aryl, wherein each R , R and R individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.
-
公开(公告)号：DE3785322T2
公开(公告)日：1993-10-28
申请号：DE3785322
申请日：1987-12-23
Applicant: IBM
Inventor： FLAGELLO DONIS GEORGE , SHAW JANE MARGARET , WITMAN DAVID FRANK
IPC: G03F1/00 , G03F1/54 , H01L21/027
Abstract: A multi-layer structure that includes a transparent dielectric substrate, a layer of a nickel-containing steel alloy, and a layer of copper and/or chromium. The structure is used as multi-density photomasks for example. The process for fabricating multi-layer structure, like a multi-density photomask comprises: a) providing a transparent dielectric substrate having a steel layer and a layer of a metal, like of copper, thereon with the layer of said steel is deposited on top of said layer of a metal or vice versa; b) providing a layer of photoresist material on top of the structure provided in step (a); c) exposing and developing said layer of photoresist material; d) selectively etching exposed portion of said metal or said steel; e) selectively etching exposed portion of said metal or said steel not etched in step (d); f) exposing and developing photoresist on the said layer of said metal or said steel etched in step (d); g) selectively etching exposed portion of said metal or said steel of step (f); and h) removing the photoresist. t
-
公开(公告)号：DE3679434D1
公开(公告)日：1991-07-04
申请号：DE3679434
申请日：1986-03-11
Applicant: IBM
-
-
-
-
-
-
-
-
-
Search Results
10
records
(took 0.01 seconds)
