公开(公告)号：JP2001068555A

公开(公告)日：2001-03-16

申请号：JP2000210177

申请日：2000-07-11

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： NARAYAN CHANDRASEKHAR ,  ARNDT KENNETH ,  LACHTRUPP DAVID ,  BRINTZINGER AXEL ,  GABRIEL DANIEL ,  KIRIHATA TOSHIAKI

IPC: H01L21/82 ,  H01H85/00 ,  H01H85/02 ,  H01H85/044 ,  H01H85/046 ,  H01L21/66 ,  H01L23/525 ,  H01L27/02

Abstract: PROBLEM TO BE SOLVED: To combine a laser actuation fuse with an electric starting fuse in order to increase total yield of product. SOLUTION: A plurality of different types of fuses 510, each serving a specified purpose, are arranged on a semiconductor integrated circuit wafer, such that a type of fuse can be actuated without missing the function of different types of fuses. A first type of fuse, e.g. a laser actuation fuse, is principally used for repairing a wafer level defect and a second type of fuse, e.g. an electric starting fuse, is used for repairing a defect found after an IC chip is mounted on a module and a stress is applied to the module during burn-in test. The module level defect is an unit cell trouble corrected normally by an electrically programmed fuse, in order to actuate a module level redundancy arrangement.

公开(公告)号：HK1034804A1

公开(公告)日：2001-11-02

申请号：HK01105209

申请日：2001-07-26

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： NARAYAN CHANDRASEKHAR ,  ARNDT KENNETH ,  LACHTRUPP DAVID ,  BRINTZINGER AXEL ,  DANIEL GABRIEL ,  KIRIHATA TOSHIAKI

IPC: H01L21/82 ,  H01H85/00 ,  H01H85/02 ,  H01H85/044 ,  H01H85/046 ,  H01L21/66 ,  H01L23/525 ,  H01L27/02 ,  H01L

Abstract: A plurality of fuses of different types, each type of fuse serving a specific purpose are positioned on a semiconductor integrated circuit wafer, wherein activating one type of fuse does not incapacitate fuses of a different type. Fuses of the first type, e.g., laser activated fuses, are primarily used for repairing defects at the wafer level, whereas fuses of the second type, e.g., electrically activated fuses, are used for repairing defects found after mounting the IC chips on a module and stressing the module at burn-in test. Defects at the module level typically are single cell failures which are cured by the electrically programmed fuses to activate module level redundancies.

公开(公告)号：JPH11154739A

公开(公告)日：1999-06-08

申请号：JP25842598

申请日：1998-09-11

Applicant: SIEMENS AG ,  IBM

Inventor： WEIGAND PETER ,  KIEWRA EDWARD W ,  NARAYAN CHANDRASEKHAR ,  ARNDT KENNETH C ,  LACHTRUPP DAVID ,  GILMOUR RICHARD ALFRED ,  PALAGONIA ANTHONY MICHAEL

IPC: H01L21/82 ,  H01L21/8242 ,  H01L23/525 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To minimize damage to a substrate being subjected to fuse operation and to reduce the fuse pitch, by arranging a screening part where a laser fuse link is set by laser beams so that the damage of laser induction from laser beams is minimized at a region below the screening part. SOLUTION: A dynamic access memory integrated circuit has a plurality of screening parts 402, 404, 406, and 408 located on the lower side of laser fuse links 202, 204, 206, and 208. The screening parts are constituted so that a first regions located on the lower side of the screening parts can be essentially minimized when the first laser fuse links are set by laser beams. The screening part is formed by a material for reflecting nearly entire laser energy applied the screening part. A reflection material such as tungsten, molybdenum, platinum, chromium, titanium, and their alloys operates favorably.

公开(公告)号：DE60011190D1

公开(公告)日：2004-07-08

申请号：DE60011190

申请日：2000-07-25

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： NARAYAN CHANDRASEKHAR ,  ARNDT KENNETH ,  KIRIHATA TOSHIAKI ,  DANIEL GABRIEL ,  LACHTRUPP DAVID ,  BRINTZINGER AXEL

IPC: H01L21/82 ,  H01H85/00 ,  H01H85/02 ,  H01H85/044 ,  H01H85/046 ,  H01L21/66 ,  H01L23/525 ,  H01L27/02

Abstract: A plurality of fuses of different types, each type of fuse serving a specific purpose are positioned on a semiconductor integrated circuit wafer, wherein activating one type of fuse does not incapacitate fuses of a different type. Fuses of the first type, e.g., laser activated fuses, are primarily used for repairing defects at the wafer level, whereas fuses of the second type, e.g., electrically activated fuses, are used for repairing defects found after mounting the IC chips on a module and stressing the module at burn-in test. Defects at the module level typically are single cell failures which are cured by the electrically programmed fuses to activate module level redundancies.

公开(公告)号：DE60011190T2

公开(公告)日：2005-06-30

申请号：DE60011190

申请日：2000-07-25

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： NARAYAN CHANDRASEKHAR ,  ARNDT KENNETH ,  KIRIHATA TOSHIAKI ,  DANIEL GABRIEL ,  LACHTRUPP DAVID ,  BRINTZINGER AXEL

IPC: H01L21/82 ,  H01H85/00 ,  H01H85/02 ,  H01H85/044 ,  H01H85/046 ,  H01L21/66 ,  H01L23/525 ,  H01L27/02

Abstract: A plurality of fuses of different types, each type of fuse serving a specific purpose are positioned on a semiconductor integrated circuit wafer, wherein activating one type of fuse does not incapacitate fuses of a different type. Fuses of the first type, e.g., laser activated fuses, are primarily used for repairing defects at the wafer level, whereas fuses of the second type, e.g., electrically activated fuses, are used for repairing defects found after mounting the IC chips on a module and stressing the module at burn-in test. Defects at the module level typically are single cell failures which are cured by the electrically programmed fuses to activate module level redundancies.