公开(公告)号：JP2001237402A

公开(公告)日：2001-08-31

申请号：JP2000393554

申请日：2000-12-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTNER WALTER ,  SCHINDLER GUENTHER DR ,  WEINRICH VOLKER ,  AHLSTEDT MATTIAS

IPC: H01L21/316 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a structured metal oxide containing layer. SOLUTION: The method comprises the processing steps of preparing a substrate, covering a metal oxide containing layer on the substrate, structuring the metal oxide containing layer, and covering a repair layer covering at least edges of the metal oxide containing layer, and the repair layer contains at least one kind of element which is contained in the metal oxide containing layer but lacks in the stoichiometric composition at the edges due to structuring, and is heat-treated so as to diffuse the element from the repair layer at damaged regions of the edges of the metal oxide containing layer.

公开(公告)号：DE19963500A1

公开(公告)日：2001-07-26

申请号：DE19963500

申请日：1999-12-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTNER WALTER ,  SCHINDLER GUENTHER ,  WEINRICH VOLKER ,  AHLSTEDT MATTIAS

IPC: H01L21/316 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L21/321 ,  C23C16/40

Abstract: The damage to edge sections which occurs during the patterning of a metal-oxide-containing layer can be compensated by the deposition of an annealing layer and a subsequent heat treatment step through which a material flow takes place from the annealing layer into the damaged edge sections. The metal-oxide-containing layer can form the dielectric of a storage capacitor of a DRAM memory cell.

公开(公告)号：DE10022656A1

公开(公告)日：2001-11-08

申请号：DE10022656

申请日：2000-04-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTNER WALTER ,  AHLSTEDT MATTIAS ,  SCHINDLER GUENTHER ,  KASTNER MARCUS ,  BEITEL GERHARD ,  WEINRICH VOLKER

IPC: H01L21/02 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/8246 ,  H01L27/108 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/8242

Abstract: Removing structures from a substrate comprises preparing a substrate with the structures to be removed; applying a sacrificial layer; and removing the structures and the sacrificial layer by polishing. An Independent claim is also included for a process for removing one or more structured layers from a substrate. Preferred Features: The structures are made from a precious metal, especially Pt or Ir, an oxide of a precious metal, a dielectric material or a ferroelectric material. The sacrificial layer is a silicon oxide or silicon nitride layer.

公开(公告)号：DE10022656B4

公开(公告)日：2006-07-06

申请号：DE10022656

申请日：2000-04-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTNER WALTER ,  AHLSTEDT MATTIAS ,  SCHINDLER GUENTHER ,  KASTNER MARCUS ,  BEITEL GERHARD ,  WEINRICH VOLKER

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/108

Abstract: A method for removing structures from a substrate is described. The method includes providing a substrate that has the structures that must be removed, applying a sacrifice layer, and removing the structures and the sacrifice layer in a polishing step. The method has the advantage that the sacrifice layer surrounds the structures that must be removed and stabilizes them, so that the structures can be eroded slowly and successively in the subsequent polishing step without breaking off. This prevents a smearing of the material of the structures such as occurs given direct polishing without a sacrifice layer.

公开(公告)号：DE19963500C2

公开(公告)日：2002-10-02

申请号：DE19963500

申请日：1999-12-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTNER WALTER ,  SCHINDLER GUENTHER ,  WEINRICH VOLKER ,  AHLSTEDT MATTIAS

IPC: H01L21/316 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L21/321 ,  C23C14/08 ,  C23C16/40

Abstract: The damage to edge sections which occurs during the patterning of a metal-oxide-containing layer can be compensated by the deposition of an annealing layer and a subsequent heat treatment step through which a material flow takes place from the annealing layer into the damaged edge sections. The metal-oxide-containing layer can form the dielectric of a storage capacitor of a DRAM memory cell.