公开(公告)号：DE19935131A1

公开(公告)日：2001-02-08

申请号：DE19935131

申请日：1999-07-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BERGMANN RENATE ,  DEHM CHRISTINE ,  HASLER BARBARA ,  SCHELER ULRICH ,  SCHINDLER GUENTHER ,  WEINRICH VOLKER ,  HARTNER WALTER

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/3065 ,  H01L21/8239 ,  H01L27/08

Abstract: The invention relates to a method for removing redepositions on a wafer and to a wafer which is devoid of redepositions. The removal of the redepositions on the wafer occurs after a protective layer is arranged on the top electrode and the boundary surfaces of the electrodes with a dielectric, whereby said areas are not damaged by wet chemical agents enabling the redepositions to be exclusively and efficiently removed.

公开(公告)号：DE19935131B4

公开(公告)日：2006-01-26

申请号：DE19935131

申请日：1999-07-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BERGMANN RENATE ,  DEHM CHRISTINE ,  HASLER BARBARA ,  SCHELER ULRICH ,  SCHINDLER GUENTHER ,  WEINRICH VOLKER ,  HARTNER WALTER

IPC: H01L21/02 ,  H01L21/302 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/8239 ,  H01L27/08