-
公开(公告)号：DE10121178A1
公开(公告)日：2002-12-05
申请号：DE10121178
申请日：2001-04-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： CZECH GUENTHER , RICHTER ERNST-CHRISTIAN , SCHELER ULRICH , SEBALD MICHAEL
Abstract: Determining image distortions of photomasks comprises applying a photo-active layer on a substrate; forming a latent image of the mask in the photo-active layer by irradiating; treating with amplifying agent which reacts with components of the material of the photo-active layer to form a chemical bond; and determining the growth of the photo-active layer outside and/or inside the image of the mask. Independent claims are also included for the following: (i) a process for optimizing the layout of a photomask; and (ii) a process for determining the local radiation dose. Preferred Features: After producing the latent image, a contrasting step is carried out, preferably by heat treating. An anti-reflection layer is formed on the substrate below the photo-active layer.
-
公开(公告)号：DE19935131A1
公开(公告)日：2001-02-08
申请号：DE19935131
申请日：1999-07-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor： BERGMANN RENATE , DEHM CHRISTINE , HASLER BARBARA , SCHELER ULRICH , SCHINDLER GUENTHER , WEINRICH VOLKER , HARTNER WALTER
IPC: H01L21/02 , H01L21/311 , H01L21/3213 , H01L21/3065 , H01L21/8239 , H01L27/08
Abstract: The invention relates to a method for removing redepositions on a wafer and to a wafer which is devoid of redepositions. The removal of the redepositions on the wafer occurs after a protective layer is arranged on the top electrode and the boundary surfaces of the electrodes with a dielectric, whereby said areas are not damaged by wet chemical agents enabling the redepositions to be exclusively and efficiently removed.
-
公开(公告)号：DE102005009553B3
公开(公告)日：2006-06-08
申请号：DE102005009553
申请日：2005-03-02
Applicant: INFINEON TECHNOLOGIES AG
Inventor： SCHELER ULRICH , STEINMETZ JOHANN , WEGE STEPHAN , SESTERHENN MICHAEL
IPC: H01L21/8242 , G11C11/34
Abstract: Forming a trough capacitor buried plate in storage cell fields on a semiconductor wafer, comprises preparing the wafer (10), etching a trough (12) for each storage cell (20) in each field on the front of the wafer, and precipitating a layer containing a dopant on the wafer. A resist layer (64) is applied to the front of the wafer, and is exposed to a light source to which it is sensitive. The storage fields are successively exposed, and the resist layer is then developed to form a mask. The structure elements are made deeper, afterwhich the exposed doped layer is removed followed by the remaining resist mask.
-
Patent Agency Ranking
公开(公告)号：DE10121179B4
公开(公告)日：2005-12-22
申请号：DE10121179
申请日：2001-04-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： CZECH GUENTHER , RICHTER ERNST-CHRISTIAN , SCHELER ULRICH , SEBALD MICHAEL
Abstract: Imaging errors in optical exposure units for the lithographic structuring of semiconductors are determined. First, a latent image of a mask is first produced in a photoactivatable layer by exposure using the optical exposure unit to be tested. After heat treating for increasing the contrast and developing the exposed resist, the latter is treated with an amplification agent which preferably diffuses into the exposed parts of the photoresist. There, it reacts with groups of the photoresist. This leads to an increase in the layer thickness of the resist in the exposed parts. A topographical image of the surface of the photoresist, which can be created, for example, by scanning electron microscopy, then indicates imaging errors by protuberances which are located outside the image of the mask. The method permits testing of optical exposure units under production conditions and thus facilitates the adjustment and the checking of all components of the exposure system used for the production of microchips.
-
公开(公告)号：DE10121178B4
公开(公告)日：2005-12-01
申请号：DE10121178
申请日：2001-04-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： CZECH GUENTHER , RICHTER ERNST-CHRISTIAN , SCHELER ULRICH , SEBALD MICHAEL
Abstract: The method enables determining imaging errors of photomasks for the lithographic structuring of semiconductors. A latent image of the mask is first produced in a photoactivatable layer by exposure. After heat treatment carried out for increasing the contrast and development of the exposed resist, the latter is treated with an amplification agent which preferably diffuses into the exposed parts of the photoresist. There, it reacts with groups of the photoresist, which leads to an increase in the layer thickness of the resist in the exposed parts. A topographical image of the surface of the photoresist, which can be created, for example, by scanning electron microscopy, then indicates imaging errors by protuberances which are located outside the image of the mask. The mask layout can be tested under production conditions and the adjustment and the checking of all components of the phototransfer system used for the production of microchips is facilitated.
-
公开(公告)号：DE10121179A1
公开(公告)日：2002-12-05
申请号：DE10121179
申请日：2001-04-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： CZECH GUENTHER , RICHTER ERNST-CHRISTIAN , SCHELER ULRICH , SEBALD MICHAEL
Abstract: Determining image distortions of optical illuminated devices comprises applying a photo-active layer on a substrate; forming a latent image of the mask in the photo-active layer by irradiating; treating with amplifying agent which reacts with components of the material of the photo-active layer to form a chemical bond; and determining the growth of the photo-active layer outside and/or inside the image of the mask Independent claims are also included for the following: (i) a process for optimizing optical illuminated devices; and (ii) a process for determining the local radiation dose. Preferred Features: After producing the latent image, a contrasting step is carried out, preferably by heat treating. An anti-reflection layer is formed on the substrate below the photo-active layer.
-
公开(公告)号：DE50000341D1
公开(公告)日：2002-09-05
申请号：DE50000341
申请日：2000-02-01
Applicant: INFINEON TECHNOLOGIES AG
Inventor： SCHWARZL SIEGFRIED , SCHELER ULRICH
IPC: G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/108 , H01L27/22
Abstract: A storage cell configuration including magnetoresistive storage elements located in a cell field between first lines and second lines. A first metalization plane, a second metalization plane and contacts connecting the first metalization plane to the second metalization plane are provided in a periphery. The first lines and the first metalization plane and the second lines and the contacts are disposed on the same plane respectively so that they can be produced by structuring one conductive layer respectively.
-
公开(公告)号：DE19935131B4
公开(公告)日：2006-01-26
申请号：DE19935131
申请日：1999-07-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor： BERGMANN RENATE , DEHM CHRISTINE , HASLER BARBARA , SCHELER ULRICH , SCHINDLER GUENTHER , WEINRICH VOLKER , HARTNER WALTER
IPC: H01L21/02 , H01L21/302 , H01L21/311 , H01L21/3213 , H01L21/8239 , H01L27/08
-
-
-
-
-
-
-
Search Results
8
records
(took 0.026 seconds)
