公开(公告)号：DE102004007409B4

公开(公告)日：2006-06-01

申请号：DE102004007409

申请日：2004-02-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HAUPT MORITZ ,  FOERSTER MATTHIAS ,  KEGEL WILHELM ,  STADTMUELLER MICHAEL ,  DIETEL ANDREAS ,  STORBECK OLAF ,  GEIDL JOCHEN

IPC: H01L21/763 ,  H01L21/768 ,  H01L21/8242

公开(公告)号：DE102004007409A1

公开(公告)日：2005-09-08

申请号：DE102004007409

申请日：2004-02-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HAUPT MORITZ ,  FOERSTER MATTHIAS ,  KEGEL WILHELM ,  STADTMUELLER MICHAEL ,  DIETEL ANDREAS ,  STORBECK OLAF ,  GEIDL JOCHEN

IPC: H01L21/763 ,  H01L21/768 ,  H01L21/8242

Abstract: Semiconductor structure manufacturing method has the following steps: provision of a semiconductor substrate (1) with a trench (5) and deposition of a filling layer (10b) of doped silicon to fill the trench and cover the surrounding structure using an over-conforming separation method that has an over-conforming separation rate due to a dosing concentration gradient. This ensures that the trench is at least partially filled from the bottom to the top.