公开(公告)号：WO2004023529A3

公开(公告)日：2004-05-13

申请号：PCT/EP0308220

申请日：2003-07-25

Applicant: MATTSON THERMAL PRODUCTS GMBH ,  INFINEON TECHNOLOGIES AG ,  ROTERS GEORG ,  FRIGGE STEFFEN ,  TAY SING PIN ,  HU YAO ZHI ,  HAYN REGINA ,  SACHSE JENS-UWE ,  SCHOER ERWIN ,  KEGEL WILHELM

Inventor： ROTERS GEORG ,  FRIGGE STEFFEN ,  TAY SING PIN ,  HU YAO ZHI ,  HAYN REGINA ,  SACHSE JENS-UWE ,  SCHOER ERWIN ,  KEGEL WILHELM

IPC: H01L21/00 ,  H01L21/28 ,  H01L21/321

CPC classification number: H01L21/67115 ,  H01L21/28247 ,  H01L21/32105

Abstract: A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive device comprises the following: at least one radiation source; a treatment chamber receiving the substrate, with at least one wall part located adjacent to the radiation sources and which is substantially transparent for the radiation of said radiation source; and at least one cover plate between the substrate and the wall part of the treatment chamber located adjacent to the radiation sources, the dimensions of said cover plate being selected such that it fully covers the transparent wall part of the treatment chamber in relation to the substrate in order to prevent tungsten evaporating from said substrate from becoming deposited on the transparent wall part of the treatment chamber.

Abstract translation: 本发明涉及一种用于半导体晶片的具有至少一个氧化硅层和非氧化钨层，所述设备包括热处理的装置：至少一个辐射源; 基板接收处理室，与至少一个位于相邻的是透明的基本上辐射源的辐射的辐射源壁部; 和基板之间并位于邻近所述处理室的辐射源透明壁部分，其中所述盖板的尺寸使得它从衬底完全覆盖处理室的透明壁部分的至少一个覆盖板，以从衬底防止蒸发钨上 进入处理室的透明壁的一部分。

公开(公告)号：WO02089190A3

公开(公告)日：2003-01-09

申请号：PCT/DE0201321

申请日：2002-04-10

Applicant: INFINEON TECHNOLOGIES AG ,  MATTSON THERMAL PRODUCTS GMBH ,  FRIGGE STEFFEN ,  KEGEL WILHELM ,  SACHSE JENS-UWE ,  STADTMUELLER MICHAEL ,  HAYN REGINA ,  ROTERS GEORG ,  SCHOER ERWIN ,  STORBECK OLAF

Inventor： FRIGGE STEFFEN ,  KEGEL WILHELM ,  SACHSE JENS-UWE ,  STADTMUELLER MICHAEL ,  HAYN REGINA ,  ROTERS GEORG ,  SCHOER ERWIN ,  STORBECK OLAF

IPC: H01L21/28 ,  H01L21/321 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78

CPC classification number: H01L21/32105 ,  H01L21/28061

Abstract: In selective oxidation of gate structures known per se, which contain a polycrystalline silicon layer and a tungsten layer, tungsten oxide evaporation is prevented or at least substantially reduced by means of a special process control, whereby the gate structure is exposed to a non-aqueous inert gas containing hydrogen before and optionally after a treatment step with a hydrogen/water mixture.

Abstract translation: 在包括多晶硅层和钨层是通过特殊工艺控制防止Wolframoxidausdampfung栅极结构的已知的选择性氧化，或至少大大降低。 与氢/水混合物中的处理步骤之后含有之前和任选该非水惰性气体，具有氢的栅极结构，采取行动。

公开(公告)号：DE50211205D1

公开(公告)日：2007-12-27

申请号：DE50211205

申请日：2002-04-10

Applicant: INFINEON TECHNOLOGIES AG ,  MATTSON THERMAL PRODUCTS GMBH

Inventor： FRIGGE STEFFEN ,  KEGEL WILHELM ,  SACHSE JENS-UWE ,  STADTMUELLER MICHAEL ,  HAYN REGINA ,  ROTERS GEORG ,  SCHOER ERWIN ,  STORBECK OLAF

IPC: H01L21/28 ,  H01L21/321 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78

Abstract: During a selective oxidation of gate structures that includes a polycrystalline silicon layer and a tungsten layer, which is known per se, a vapor deposition of tungsten oxide is prevented or at least greatly reduced by a special process. The gate structure is acted on by a hydrogen-containing, nonaqueous inert gas before and, if appropriate, after a treatment step with a hydrogen/water mixture.

公开(公告)号：DE102004007409B4

公开(公告)日：2006-06-01

申请号：DE102004007409

申请日：2004-02-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HAUPT MORITZ ,  FOERSTER MATTHIAS ,  KEGEL WILHELM ,  STADTMUELLER MICHAEL ,  DIETEL ANDREAS ,  STORBECK OLAF ,  GEIDL JOCHEN

IPC: H01L21/763 ,  H01L21/768 ,  H01L21/8242

公开(公告)号：DE10120523A1

公开(公告)日：2002-10-31

申请号：DE10120523

申请日：2001-04-26

Applicant: INFINEON TECHNOLOGIES AG ,  MATTSON THERMAL PRODUCTS GMBH

Inventor： HAYN REGINA ,  SACHSE JENS-UWE ,  SCHOER ERWIN ,  KEGEL WILHELM ,  STORBECK OLAF ,  STADTMUELLER MICHAEL ,  ROTERS GEORG ,  FRIGGE STEFFEN

IPC: H01L21/28 ,  H01L21/321 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L21/336

Abstract: In selective oxidation of gate structures known per se, which contain a polycrystalline silicon layer and a tungsten layer, tungsten oxide evaporation is prevented or at least substantially reduced by means of a special process control, whereby the gate structure is exposed to a non-aqueous inert gas containing hydrogen before and optionally after a treatment step with a hydrogen/water mixture.

公开(公告)号：DE102004007409A1

公开(公告)日：2005-09-08

申请号：DE102004007409

申请日：2004-02-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HAUPT MORITZ ,  FOERSTER MATTHIAS ,  KEGEL WILHELM ,  STADTMUELLER MICHAEL ,  DIETEL ANDREAS ,  STORBECK OLAF ,  GEIDL JOCHEN

IPC: H01L21/763 ,  H01L21/768 ,  H01L21/8242

Abstract: Semiconductor structure manufacturing method has the following steps: provision of a semiconductor substrate (1) with a trench (5) and deposition of a filling layer (10b) of doped silicon to fill the trench and cover the surrounding structure using an over-conforming separation method that has an over-conforming separation rate due to a dosing concentration gradient. This ensures that the trench is at least partially filled from the bottom to the top.

公开(公告)号：DE10236896A1

公开(公告)日：2004-04-01

申请号：DE10236896

申请日：2002-08-12

Applicant: INFINEON TECHNOLOGIES AG ,  MATTSON THERMAL PRODUCTS GMBH

Inventor： ROTERS GEORG ,  FRIGGE STEFFEN ,  TAY SING PIN ,  HU YAO ZHI ,  HAYN REGINA ,  SACHSE JENS-UWE ,  SCHOER ERWIN ,  KEGEL WILHELM

IPC: H01L21/00 ,  H01L21/28 ,  H01L21/321 ,  H01L21/324 ,  H01L21/316 ,  H01L21/336

Abstract: A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive device comprises the following: at least one radiation source; a treatment chamber receiving the substrate, with at least one wall part located adjacent to the radiation sources and which is substantially transparent for the radiation of said radiation source; and at least one cover plate between the substrate and the wall part of the treatment chamber located adjacent to the radiation sources, the dimensions of said cover plate being selected such that it fully covers the transparent wall part of the treatment chamber in relation to the substrate in order to prevent material, comprising a metal, metal oxide or metal hydroxide such as tungsten, tungsten oxide or tungsten hydroxide, from said substrate from becoming deposited on or evaporating onto the transparent wall part of the treatment chamber.

公开(公告)号：DE10010821A1

公开(公告)日：2001-09-13

申请号：DE10010821

申请日：2000-02-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUF ALEXANDER ,  KEGEL WILHELM ,  KARCHER WOLFRAM ,  SCHREMS MARTIN

IPC: H01L21/02 ,  H01L21/316 ,  H01L21/334 ,  H01L21/8242 ,  H01L27/108

Abstract: Increasing the capacity in a storage trench comprises depositing a first silicon oxide layer (4) in the trench; depositing a silicon layer (5) over the first layer to sufficiently cover the wall of the trench; and depositing a layer (6) containing an oxidizable metal. The silicon layer and the oxidizable metal layer are oxidized to form a layer containing a metal oxide and silicon oxide. An independent claim is also included for a trench capacitor comprising an inner wall covered with a silicon oxide layer which is covered with a metal oxide layer followed by a further silicon oxide layer. The remainder of the trench is filled with silicon. Preferred Features: Deposition is carried out by CVD or atomic layer deposition. The oxidizable metal is Ti, TiN, W, WN, Ta, TaN, WSi, TiSi or TaSi. Oxidation is carried out in an oxygen-containing atmosphere.