中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

13 records (took 0.037 seconds)

    4.
    发明专利
    未知

    公开(公告)号：DE59908482D1

    公开(公告)日：2004-03-11

    申请号：DE59908482

    申请日：1999-11-03

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： NEBEL GERHARD ,  GUENGERICH VOLKER ,  BLUM ANDREAS ,  WEDER UWE ,  EICHNER DIERK ,  REINER ROBERT ,  SCHRAUD GERHARD

    IPC: H03D1/00 ,  G06K7/00 ,  G06K19/07 ,  H04L25/06 ,  H04L27/04 ,  H04L27/06

    Abstract: A method for demodulating a voltage which has been ASK modulated by changing the amplitude between a low level and a high level, in particular for use during contactless data transmission from a card reader/writer to a smart card, is described. The method is distinguished, in that, in an initialization phase, a first mean value is produced from the high voltage level and a stored partial voltage derived therefrom in order to detect a change to a low voltage level. The change to the low voltage level represents a start value and is detected by a subsequent comparison of the modulated voltage with the first mean value. In a subsequent demodulation phase, a second mean value is produced from the detected low voltage level and the high voltage level in order to demodulate the modulated voltage by comparing the modulated voltage with the second mean value.

    5.
    发明专利
    未知

    公开(公告)号：DE102005002707B4

    公开(公告)日：2007-07-26

    申请号：DE102005002707

    申请日：2005-01-19

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： THEUSS HORST ,  GUENGERICH VOLKER

    IPC: H01L23/50 ,  H01L21/60 ,  H01L23/498 ,  H01L23/64

    Abstract: The component has a micro connecting unit (3) to provide high frequency coupling of components (5) of the semiconductor component. The unit has a three ply structure with two layers (6, 8) made up of conductive material and a layer (7) made up of insulating material. The layers (6, 8) extend along a common middle line protecting against interfering fields and fixed on contact surface pairs of the components (5). An independent claim is also included for a method for creating an electrical connection between components of a semiconductor component and micro-connection unit.

    Chip carrier used as heat sink for semiconductor chips, comprises two recesses in respective surface of chip carrier, and dimensioned to receive two semiconductor chips
    6.
    发明专利
    Chip carrier used as heat sink for semiconductor chips, comprises two recesses in respective surface of chip carrier, and dimensioned to receive two semiconductor chips 未知

    公开(公告)号：DE102005008600A1

    公开(公告)日：2006-08-31

    申请号：DE102005008600

    申请日：2005-02-23

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： AUBURGER ALBERT ,  STADLER BERND ,  DANGELMAIER JOCHEN ,  GUENGERICH VOLKER

    IPC: H01L23/12 ,  H01L21/50 ,  H01L23/36

    Abstract: A chip carrier (1) comprises two opposing surfaces (2, 3); and two recesses (4, 5) provided in the respective surface, where the chip carrier is configured to provide a heat sink for semiconductor chips arranged on the chip carrier, and the recesses are dimensioned to receive two semiconductor chips (10, 10'). Independent claims are also included for: (1) a system comprising a chip carrier and two semiconductor chips supported by the chip carrier, the chip carrier comprising two opposing surfaces, and two recesses in the respective surface, where the semiconductor chips are received within the respective recess, and the chip carrier is configured to provide a heat sink for the semiconductor chips supported by the chip carrier; and (2) a method for producing a chip carrier to support semiconductor chips, comprising forming a first recess in a first surface of the chip carrier; and forming a second recess in a second surface of the chip carrier, the second surface opposing the first surface, where the recesses are configured to receive the semiconductor chips in the respective recesses, and the chip carrier is configured to provide a heat sink for the semiconductor chips.

    7.
    发明专利
    未知

    公开(公告)号：AT259128T

    公开(公告)日：2004-02-15

    申请号：AT99955954

    申请日：1999-11-03

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： NEBEL GERHARD ,  GUENGERICH VOLKER ,  BLUM ANDREAS ,  WEDER UWE ,  EICHNER DIERK ,  REINER ROBERT ,  SCHRAUD GERHARD

    IPC: H03D1/00 ,  G06K7/00 ,  G06K19/07 ,  H04L25/06 ,  H04L27/04 ,  H04L27/06

    Abstract: A method for demodulating a voltage which has been ASK modulated by changing the amplitude between a low level and a high level, in particular for use during contactless data transmission from a card reader/writer to a smart card, is described. The method is distinguished, in that, in an initialization phase, a first mean value is produced from the high voltage level and a stored partial voltage derived therefrom in order to detect a change to a low voltage level. The change to the low voltage level represents a start value and is detected by a subsequent comparison of the modulated voltage with the first mean value. In a subsequent demodulation phase, a second mean value is produced from the detected low voltage level and the high voltage level in order to demodulate the modulated voltage by comparing the modulated voltage with the second mean value.

    8.
    发明专利
    未知

    公开(公告)号：BR9915115A

    公开(公告)日：2001-07-31

    申请号：BR9915115

    申请日：1999-11-03

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： NEBEL GERHARD ,  GUENGERICH VOLKER ,  BLUM ANDREAS ,  WEDER UWE ,  EICHNER DIERK ,  REINER ROBERT ,  SCHRAUD GERHARD

    IPC: H03D1/00 ,  G06K7/00 ,  G06K19/07 ,  H04L25/06 ,  H04L27/04 ,  H04L27/06

    Abstract: A method for demodulating a voltage which has been ASK modulated by changing the amplitude between a low level and a high level, in particular for use during contactless data transmission from a card reader/writer to a smart card, is described. The method is distinguished, in that, in an initialization phase, a first mean value is produced from the high voltage level and a stored partial voltage derived therefrom in order to detect a change to a low voltage level. The change to the low voltage level represents a start value and is detected by a subsequent comparison of the modulated voltage with the first mean value. In a subsequent demodulation phase, a second mean value is produced from the detected low voltage level and the high voltage level in order to demodulate the modulated voltage by comparing the modulated voltage with the second mean value.

Patent Agency Ranking