公开(公告)号：JP2001298165A

公开(公告)日：2001-10-26

申请号：JP2001057296

申请日：2001-03-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BACHHOFER HARALD ,  HARTNER WALTER ,  SCHINDLER GUENTHER DR ,  HANEDER THOMAS PETER ,  HONLEIN WOLFGANG

IPC: H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To facilitate the production of a storage capacitor. SOLUTION: The crystallizing temperature of a ferroelectric layer (3) (dielectric) to be used for the storage capacitor can be lowered by applying an extremely thin CeO2 layer (2) to a first platinum electrode layer (1) before depositing the ferroelectric layer (3). Continuously, in a treatment process, the dielectric layer (3) deposited in a noncrystalline state is crystallized at a temperature within the range from 590 to 620 deg.C. Next, a second electrode layer (4) is applied and the storage capacitor is completed.

公开(公告)号：JP2001273761A

公开(公告)日：2001-10-05

申请号：JP2001037522

申请日：2001-02-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BACHHOFER HARALD ,  HANEDER THOMAS PETER ,  ULLMANN MARC ,  BRAUN GEORG ,  HONLEIN WOLFGANG

IPC: G11C11/22 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To prevent a present state from being changed to a polarization state in which other ferroelectrioc transistor in other memory cell in a memory matrix cannot be discriminated, when a state is read out from a ferroelectric transistor or a state is stored in the ferroelectric transistor. SOLUTION: Threshold voltage of an other ferroelectric transistor in a memory matrix is increased by applying drain-substrate voltage to a ferroelectric transistor, when a state is read out from a ferroelectric transistor or a state is stored in the ferroelectric transistor.