公开(公告)号：WO2004049440A3

公开(公告)日：2004-10-07

申请号：PCT/DE0303885

申请日：2003-11-24

Applicant: INFINEON TECHNOLOGIES AG ,  MIKOLAJICK THOMAS ,  WERNER WOLFGANG ,  KLOSE HYANG SOOK HF ,  KLOSE JAN ARAM HM

Inventor： MIKOLAJICK THOMAS ,  WERNER WOLFGANG ,  KLOSE HELMUT

IPC: H01L27/24 ,  H01L45/00 ,  H01L21/8246 ,  H01L27/112

CPC classification number: H01L45/1293 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/122 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16 ,  H01L45/1683

Abstract: Disclosed are a semiconductor memory device (1) having a memory effect due to phase transformation and a method for the production thereof, according to which a hollow space arrangement (H) comprising at least one hollow space (H1, H2) that is disposed near the respective memory element (E) is provided for each memory element (E) in a semiconductor substrate (20) such that thermal coupling of the respective memory element (E) to the surroundings thereof is embodied in a reduced manner by lowering thermal conductivity between the memory element (E) and the surroundings.

Abstract translation: 已提出了一种半导体存储器设备（1）与相变记忆效应和它们的制备方法，其中，用于在半导体基片靠近每一个具有与至少一个空腔（H1，H2）的腔体安排（H）的存储元件（E）（20） 各个存储器元件（e）中被设置为使得通过降低存储元件（e）和环境之间的热传导率的各存储元件（E）到所述存储元件（e）中的环境的热耦合形成减少。

公开(公告)号：WO02099845A3

公开(公告)日：2003-08-21

申请号：PCT/DE0202026

申请日：2002-06-03

Applicant: INFINEON TECHNOLOGIES AG ,  HOENLEIN WOLFGANG ,  KLOSE HELMUT ,  KREUPL FRANZ ,  SIMBUERGER WERNER

Inventor： HOENLEIN WOLFGANG ,  KLOSE HELMUT ,  KREUPL FRANZ ,  SIMBUERGER WERNER

IPC: H01L25/18 ,  H01L21/60 ,  H01L23/485 ,  H01L25/065 ,  H01L25/07 ,  H01L23/498 ,  C01B31/02 ,  H05K3/32 ,  H05K3/40

CPC classification number: H01L25/0657 ,  B82Y10/00 ,  B82Y30/00 ,  G01R31/2884 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/0566 ,  H01L2224/13019 ,  H01L2224/13023 ,  H01L2224/13078 ,  H01L2224/13099 ,  H01L2224/13193 ,  H01L2224/16145 ,  H01L2224/81065 ,  H01L2224/81097 ,  H01L2224/81191 ,  H01L2224/81424 ,  H01L2224/81447 ,  H01L2224/81801 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01072 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05099 ,  H01L2224/05599 ,  H01L2224/05552

Abstract: A plurality of nanotubes is mounted on at least one external metallic chip contact of the electronic chip for contacting said electronic chip with an additional electronic chip.

Abstract translation: 在电子芯片中的至少一个外部片金属接触多个纳米管被应用于电子芯片与另外的电子芯片接触。

公开(公告)号：DE10394112D2

公开(公告)日：2005-10-20

申请号：DE10394112

申请日：2003-11-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KLOSE HELMUT

IPC: H01L27/24 ,  H01L45/00 ,  H01L27/00

Abstract: A semiconductor memory device with a phase transformation memory effect includes at least one memory element in a semiconductor substrate, and a cavity arrangement including at least one cavity in spatial proximity to the respective memory element. The cavity is in spatial arrangement with the respective memory element so as to reduce thermal coupling of the respective memory element to the areas surrounding the memory element, which also reduces the thermal conductivity between memory element and the areas surrounding the memory element.

公开(公告)号：DE10255117A1

公开(公告)日：2004-06-17

申请号：DE10255117

申请日：2002-11-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MIKOLAJICK THOMAS ,  WERNER WOLFGANG ,  KLOSE HELMUT

IPC: H01L27/24 ,  H01L45/00 ,  H01L27/112 ,  H01L21/8246

Abstract: A semiconductor memory device with a phase transformation memory effect includes at least one memory element in a semiconductor substrate, and a cavity arrangement including at least one cavity in spatial proximity to the respective memory element. The cavity is in spatial arrangement with the respective memory element so as to reduce thermal coupling of the respective memory element to the areas surrounding the memory element, which also reduces the thermal conductivity between memory element and the areas surrounding the memory element.

公开(公告)号：DE59608717D1

公开(公告)日：2002-03-21

申请号：DE59608717

申请日：1996-11-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KLOSE HELMUT

IPC: H01L27/112

公开(公告)号：DE10127351A1

公开(公告)日：2002-12-19

申请号：DE10127351

申请日：2001-06-06

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KREUPL FRANZ ,  SIMBUERGER WERNER ,  HOENLEIN WOLFGANG ,  KLOSE HELMUT

IPC: H01L25/18 ,  H01L21/60 ,  H01L23/485 ,  H01L25/065 ,  H01L25/07 ,  H01L23/50 ,  B82B1/00

Abstract: Electronic chip (101) comprises several external contacts (103) of which at least two are provided with a number of nano-tubes for purposes of contacting an external contact (106) of another electronic chip (102) with several external contacts. Also claimed is an arrangement (100) of two electronic chips (101, 102) of which one (101) is provided with nano-tubes.

公开(公告)号：AU2003292985A8

公开(公告)日：2004-06-18

申请号：AU2003292985

申请日：2003-11-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MIKOLAJICK THOMAS ,  WERNER WOLFGANG ,  KLOSE HELMUT

IPC: H01L27/24 ,  H01L45/00 ,  H01L21/8246 ,  H01L27/112

Abstract: A semiconductor memory device with a phase transformation memory effect includes at least one memory element in a semiconductor substrate, and a cavity arrangement including at least one cavity in spatial proximity to the respective memory element. The cavity is in spatial arrangement with the respective memory element so as to reduce thermal coupling of the respective memory element to the areas surrounding the memory element, which also reduces the thermal conductivity between memory element and the areas surrounding the memory element.

公开(公告)号：DE59814458D1

公开(公告)日：2010-08-26

申请号：DE59814458

申请日：1998-08-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KLOSE HELMUT ,  LEHMANN VOLKER ,  REISINGER HANS ,  HOENLEIN WOLFGANG

IPC: H01L27/04 ,  H01L27/108 ,  H01L21/3205 ,  H01L21/822 ,  H01L21/8242

公开(公告)号：AU2003292985A1

公开(公告)日：2004-06-18

申请号：AU2003292985

申请日：2003-11-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KLOSE HELMUT ,  MIKOLAJICK THOMAS ,  WERNER WOLFGANG

IPC: H01L27/24 ,  H01L45/00 ,  H01L27/00

Abstract: A semiconductor memory device with a phase transformation memory effect includes at least one memory element in a semiconductor substrate, and a cavity arrangement including at least one cavity in spatial proximity to the respective memory element. The cavity is in spatial arrangement with the respective memory element so as to reduce thermal coupling of the respective memory element to the areas surrounding the memory element, which also reduces the thermal conductivity between memory element and the areas surrounding the memory element.