公开(公告)号：DE10343084B4

公开(公告)日：2006-07-06

申请号：DE10343084

申请日：2003-09-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZUNDEL MARKUS ,  ZELSACHER RUDOLF ,  PERI HERMANN ,  KOTZ DIETMAR ,  KNAPP ACHIM

IPC: H01L21/78 ,  H01L21/76

公开(公告)号：DE10343084A1

公开(公告)日：2005-05-04

申请号：DE10343084

申请日：2003-09-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZUNDEL MARKUS ,  ZELSACHER RUDOLF ,  PERI HERMANN ,  KOTZ DIETMAR ,  KNAPP ACHIM

IPC: H01L21/76 ,  H01L21/78

Abstract: The semiconducting wafer has a number of chips (3) to be separated from each other by isolating frames, each with a cell field (6) in their inner regions and with a chipping stopper in their edge regions (4b). The chipping stopper consists of at least one trench (5a,5b) in which an electrically inactive material is filled and/or in which a cavity is formed. An independent claim is also included for a method of separating a wafer into a number of chips along sawing lines.

公开(公告)号：DE10001868B4

公开(公告)日：2006-03-16

申请号：DE10001868

申请日：2000-01-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KRISCHKE NORBERT ,  KNAPP ACHIM ,  PAIRITSCH HERBERT

IPC: H01L29/06 ,  H01L29/40

公开(公告)号：DE10001868A1

公开(公告)日：2001-08-02

申请号：DE10001868

申请日：2000-01-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KRISCHKE NORBERT ,  KNAPP ACHIM ,  PAIRITSCH HERBERT

IPC: H01L29/06 ,  H01L29/40

Abstract: The component has a semiconducting body (1) of one conductor type contg. a body zone (2) of the opposite conductor type and at least one field plate (4) on an insulating coating (5,6) on the semiconducting body and essentially in a region outside the pn-junction defined by the body zone and the semiconducting body. The body zone has an extension zone (10) of the other conductor type formed by additional doping that extends in the semiconducting body until beneath the insulating coating at a distance from the surface of the semiconducting body.