公开(公告)号：DE10259634A1

公开(公告)日：2004-07-15

申请号：DE10259634

申请日：2002-12-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GRAF WERNER ,  HAFFNER HENNING ,  KOWALEWSKI JOHANNES ,  HEINECK LARS

IPC: H01L21/768 ,  H01L21/8242

Abstract: The invention relates to a method for production of contacts on a wafer, preferably with the aid of a lithographic process. The preferred embodiment provides a method which overcomes the disadvantages of the complex point/hole lithography process, and which avoids any increase in the process complexity. This method is achieved in that a strip structure extending over two layers is used to structure the contacts. The strip structure in the first layer is rotated at a predetermined angle with respect to the strip structure in the second layer, and the contacts are formed in the mutually overlapping areas of the strip structures in the two layers.

公开(公告)号：DE10255653A1

公开(公告)日：2004-06-24

申请号：DE10255653

申请日：2002-11-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KOWALEWSKI JOHANNES ,  KUNKEL GERHARD ,  PFORR RAINER ,  VOIGT INA

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G03F1/14

Abstract: The method involves determining auxiliary structures (7,8) acting on the diffraction spectrum of working structures (5,6) with dimensioning less than the optical resolution limit, defined by the light source's wavelength and a numerical aperture of the lens system, by computer simulation, providing the auxiliary structures on the mask (1) and forming an image of the mask's working structures on the substrate, which has a light sensitive coating. AN Independent claim is also included for the following: (a) a mask for implementing the inventive method.

公开(公告)号：DE10216820A1

公开(公告)日：2003-11-06

申请号：DE10216820

申请日：2002-04-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HASSMANN JENS ,  VOIGT INA ,  KOWALEWSKI JOHANNES ,  KUNKEL GERHARD ,  SCHEDEL THORSTEN ,  SCHROEDER UWE PAUL

IPC: G03F7/20 ,  G03F1/02

公开(公告)号：DE10154981A1

公开(公告)日：2003-05-15

申请号：DE10154981

申请日：2001-10-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KRAUSE GERD ,  TRINOWITZ REINER ,  LAESSIG ANTJE ,  LANGNICKEL HEIKE ,  FROEHLICH HANS-GEORG ,  KOWALEWSKI JOHANNES ,  GOETSCHKES UDO ,  HUEBINGER FRANK

IPC: H01L23/544 ,  H01L21/8242

Abstract: A mark configuration for the alignment and/or determination of a relative position of at least two planes in relation to one another in a substrate and/or in layers on a substrate during lithographic exposure, in particular, in the case of a wafer during the production of DRAMs, includes a mark structure, and at least one layer of a definable thickness underneath the mark structure for adjusting the physical position of the mark structure relative to a reference plane in or on the substrate. Also provided is a wafer having such a configuration and a process for providing such a configuration. The invention allows a mark configuration to have mark structures exhibiting good contrast regardless of the design or the process conditions.

公开(公告)号：DE10338503B3

公开(公告)日：2005-05-25

申请号：DE10338503

申请日：2003-08-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOELLER HOLGER ,  VOIGT INA ,  KOWALEWSKI JOHANNES ,  HEINECK LARS

IPC: H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

Abstract: The method involves providing a hard mask layer (5a,5b) on a semiconductor substrate (1), providing a structured mask layer (10') on the hard mask layer, carrying out at least one inclined ion implantations so that an implanted region (5b) lies at least partly under the structured mask layer and a non-implanted region (5a) under the structured layer is smaller than corresponding region of the structured layer, removing the structured layer and structuring the hard mask layer by selectively removing the non-implanted region or the implanted region by etching.

公开(公告)号：DE10126130A1

公开(公告)日：2002-12-12

申请号：DE10126130

申请日：2001-05-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BAUCH LOTHAR ,  GRUENING-VON SCHWERIN ULRICKE ,  HAFFNER HENNING ,  KOWALEWSKI JOHANNES ,  SAVIGNAC DOMINIQUE ,  MORHARD KLAUS-DIETER ,  THIELSCHER GUIDO ,  TRINOWITZ REINER

IPC: G03F1/00 ,  H01L21/768 ,  H01L21/28

Abstract: The method involves using a mask illuminated with short-wave light in an optical lithographic method. The mask has elongated, slit-shaped openings for producing essentially circular and/or elongated contact holes (2,6). The illumination conditions are selected so that an image reduction of at least 200 to 400 nm. occurs in the longitudinal direction of the openings.