公开(公告)号：DE69942361D1

公开(公告)日：2010-06-24

申请号：DE69942361

申请日：1999-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MICHAELIS ALEXANDER

IPC: H01L21/02 ,  H01L27/108 ,  H01L21/334 ,  H01L21/8242 ,  H01L27/10

公开(公告)号：DE69929266D1

公开(公告)日：2006-03-30

申请号：DE69929266

申请日：1999-05-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MICHAELIS ALEXANDER ,  RANADE RAJIV ,  FLIETNER BERTRAND

IPC: H01L21/302 ,  H01L29/94 ,  H01L21/02 ,  H01L21/30 ,  H01L21/3065 ,  H01L21/334 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108

Abstract: A vertical trench in a silicon wafer for use in forming the storage capacitor of a DRAM is etched by reactive ion etching in a manner to have a profile that has multiple waists. This profile is obtained by varying the rate of flow of coolant in the base member on which the silicon wafer is supported during the reactive ion etching to vary the temperature of the silicon wafer during the etching. Alternatively, the multiple waists are achieved by either by varying the ratio of the different gases in the etching chamber or the total gas pressure in the chamber.

公开(公告)号：DE10341322A1

公开(公告)日：2004-05-19

申请号：DE10341322

申请日：2003-09-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GENZ OLIVER ,  MICHAELIS ALEXANDER ,  MANTZ ULRICH

IPC: G01B11/02 ,  G01N21/21 ,  G01J4/00 ,  G02B11/00 ,  G01B11/24 ,  H01L21/66

Abstract: An apparatus and method for measuring feature sizes having form birefringence. The method includes providing a surface having surface features thereon; radiating the surface features with light having a first wavelength and a first polarization; measuring a reflected polarization of light having the first wavelength reflected from the surface features; rotating the surface features by rotating the surface to measure the reflected polarization of the reflected light having the first wavelength at least one new rotated position; radiating the surface features with light having a second wavelength and the first polarization; measuring a reflected polarization of light having the second wavelength reflected from the surface features; rotating the surface features by rotating the surface to measure the reflected polarization of the reflected light having the second wavelength at least one new rotated position; and correlating the reflected polarization from the light having the first and second polarizations to surface feature sizes.

公开(公告)号：DE10317151A1

公开(公告)日：2004-01-15

申请号：DE10317151

申请日：2003-04-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEWS HELMUT HORST ,  SCHUPKE KRISTIN ,  MICHAELIS ALEXANDER ,  POPP MARTIN ,  SCHROEDER UWE ,  KOEHLER DANIEL ,  KUDELKA STEPHAN

IPC: H01L21/302 ,  H01L21/306 ,  H01L21/311 ,  H01L21/334 ,  H01L21/336 ,  H01L21/461 ,  H01L21/8242 ,  H01L27/108

Abstract: A method for etching a recess in a polysilicon region of a semiconductor device by applying a solution of NH 4 OH in water to the polysilicon.

公开(公告)号：DE69929266T2

公开(公告)日：2006-08-17

申请号：DE69929266

申请日：1999-05-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MICHAELIS ALEXANDER ,  RANADE RAJIV ,  FLIETNER BERTRAND

IPC: H01L21/302 ,  H01L29/94 ,  H01L21/02 ,  H01L21/30 ,  H01L21/3065 ,  H01L21/334 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108

Abstract: A vertical trench in a silicon wafer for use in forming the storage capacitor of a DRAM is etched by reactive ion etching in a manner to have a profile that has multiple waists. This profile is obtained by varying the rate of flow of coolant in the base member on which the silicon wafer is supported during the reactive ion etching to vary the temperature of the silicon wafer during the etching. Alternatively, the multiple waists are achieved by either by varying the ratio of the different gases in the etching chamber or the total gas pressure in the chamber.