公开(公告)号：DE102005003184A1

公开(公告)日：2006-07-27

申请号：DE102005003184

申请日：2005-01-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOUKARA MOLELA ,  WINKLER THORSTEN ,  ZEILER KARSTEN ,  KOEHLE RODERICK ,  THIELE JOERG ,  DETTMANN WOLFGANG ,  MITTERMEIER ARMELLE BENEDICTE ,  HENNIG MARIO ,  KOESTLER WOLFRAM

IPC: G03F1/00 ,  H01L21/8242

Abstract: The mask has a mask structure (30) in a chromium layer (3), a halftone layer (4) or a glass layer (5) of the tri-tone mask. The structure is surrounded by a strip of the halftone layer with a predetermined width. The strip creates a sharp contrast between a passage from the opaque layer to the glass layer. The width of the strip is constant and parallel to an edge of the structure and amounts between 50 and 200 nanometers. Independent claims are also included for the following: (A) a method of manufacture of a tri-tone mask (B) utilization of a tri-tone mask for the lithographic manufacture of a semiconductor device.