公开(公告)号：DE10043215C1

公开(公告)日：2002-04-18

申请号：DE10043215

申请日：2000-09-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LEHR MATTHIAS UWE ,  POLEI VERONIKA ,  SPERL IRENE ,  SCHILLING UWE

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/82 ,  H01L23/525 ,  H01L21/768

Abstract: A method for producing antifuse structures and antifuses by which adjacent conductive regions can be selectively electrically connected involve the application of a sacrificial layer to a first conductive region. The sacrificial layer is patterned with the aid of a photolithographic method. A fuse layer is applied and the sacrificial layer is then removed. A non-conductive layer is applied and a conductive material is introduced in an opening in the non-conductive layer for the purpose of forming a second conductive region.

公开(公告)号：DE10111989A1

公开(公告)日：2002-10-02

申请号：DE10111989

申请日：2001-03-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KRIZ JAKOB ,  GRATZ ACHIM ,  POLEI VERONIKA ,  SPERL IRENE ,  RUDER THOMAS

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/485 ,  H01L23/60

Abstract: Process for reducing a plasma-induced charge in a semiconductor circuit having a support material (1), an electrically conducting layer (2), an auxiliary layer (3), an insulating layer (4) and a mask layer (5) comprises: removing the insulating layer using a plasma-promoted dry chemical method up to a minimum thickness using the mask layer; wet chemically removing the remaining insulating layer (R) up to the auxiliary layer using the mask layer; removing the mask layer; and wet chemically removing the auxiliary layer using the insulating layer as mask. Preferred Features: The insulating layer comprises an oxide layer and an oxynitride or nitride layer. The wet chemical removal step uses a hot aqueous solution having a high concentration of hydrogen super oxide.

公开(公告)号：DE10111989C2

公开(公告)日：2003-11-06

申请号：DE10111989

申请日：2001-03-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KRIZ JAKOB ,  GRATZ ACHIM ,  POLEI VERONIKA ,  SPERL IRENE ,  RUDER THOMAS

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/485 ,  H01L23/60

公开(公告)号：DE10029036C1

公开(公告)日：2001-08-09

申请号：DE10029036

申请日：2000-06-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MORHARD KLAUS-DIETER ,  SPERL IRENE ,  PENNER KLAUS

IPC: H01L21/8242