公开(公告)号：DE10220586A1

公开(公告)日：2003-11-27

申请号：DE10220586

申请日：2002-05-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BEWERSDORFF-SARLETTE ULRIKE ,  SCHUPKE KRISTIN ,  RUDER THOMAS

IPC: G03F7/42 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/321

Abstract: Process for removing resist layers from a tungsten-containing surface comprises using a plasma produced from a gas mixture containing an oxygen-containing gas and a fluorine-containing gas.

公开(公告)号：DE10111989C2

公开(公告)日：2003-11-06

申请号：DE10111989

申请日：2001-03-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KRIZ JAKOB ,  GRATZ ACHIM ,  POLEI VERONIKA ,  SPERL IRENE ,  RUDER THOMAS

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/485 ,  H01L23/60

公开(公告)号：DE10255865A1

公开(公告)日：2004-06-17

申请号：DE10255865

申请日：2002-11-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHWALBE GRIT ,  RUDER THOMAS

IPC: H01L21/311 ,  H01L21/768

Abstract: A process for structuring dielectric layers on a semiconductor substrate by: (i) deposition of a dielectric layer (DL) on a first layer, and a photosensitive resist layer on the DL; (ii) exposure and development of the resist layer to give resist mask; (iii) erosion of the DL to expose the first layer; (iv) incineration (sic) of the resist mask in an oxygen plasma at less than 200degreesC, so that a structured DL is obtained, which is etched with dilute aqueous hydrofluoric acid. A process for structuring DL on a semiconductor substrate with at least the steps:preparation of a first layer, deposition of at least one DL on the first layer; deposition of a photosensitive resist layer on the DL;sectionwise light exposure and development of the resist layer so that a resist mask is obtained, thru which sections the DL is exposed;erosion of the DL in the sections exposed via the resist mask to at least a depth such that the first layer is exposed, incineration (sic) of the resist mask in an oxygen plasma at a temperature below 200degreesC, where the oxygen plasma is obtained from a gas mixture containing at least oxygen and forming gas (sic), where the proportion of oxygen gas is less than 60 vol.% and of forming gas more than 40 vol.%, so that a structured dielectric layer is obtained;and cleaning of the structured dielectric layer with dilute aqueous hydrofluoric acid.

公开(公告)号：DE10228571A1

公开(公告)日：2004-01-22

申请号：DE10228571

申请日：2002-06-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AMON JUERGEN ,  FAUL JUERGEN ,  SCHUSTER THOMAS ,  RUDER THOMAS

IPC: H01L21/60 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

Abstract: A semiconductor structure having a plurality of gate stacks on a semiconductor substrate provided with a gate dielectric. The gate stacks have a lower first layer made of polysilicon, an overlying second layer made of a metal silicide, and an upper third layer made of an insulating material, and a sidewall oxide on the sidewalls of the first and second layers. The sidewall oxide is thinned or removed on one of the sidewalls, and the gate stacks have sidewall spacers made of the insulating material.

公开(公告)号：DE10255865B4

公开(公告)日：2007-03-22

申请号：DE10255865

申请日：2002-11-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHWALBE GRIT ,  RUDER THOMAS

IPC: H01L21/311 ,  H01L21/768

Abstract: A process for structuring dielectric layers on a semiconductor substrate by: (i) deposition of a dielectric layer (DL) on a first layer, and a photosensitive resist layer on the DL; (ii) exposure and development of the resist layer to give resist mask; (iii) erosion of the DL to expose the first layer; (iv) incineration (sic) of the resist mask in an oxygen plasma at less than 200degreesC, so that a structured DL is obtained, which is etched with dilute aqueous hydrofluoric acid. A process for structuring DL on a semiconductor substrate with at least the steps:preparation of a first layer, deposition of at least one DL on the first layer; deposition of a photosensitive resist layer on the DL;sectionwise light exposure and development of the resist layer so that a resist mask is obtained, thru which sections the DL is exposed;erosion of the DL in the sections exposed via the resist mask to at least a depth such that the first layer is exposed, incineration (sic) of the resist mask in an oxygen plasma at a temperature below 200degreesC, where the oxygen plasma is obtained from a gas mixture containing at least oxygen and forming gas (sic), where the proportion of oxygen gas is less than 60 vol.% and of forming gas more than 40 vol.%, so that a structured dielectric layer is obtained;and cleaning of the structured dielectric layer with dilute aqueous hydrofluoric acid.

公开(公告)号：DE10111989A1

公开(公告)日：2002-10-02

申请号：DE10111989

申请日：2001-03-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KRIZ JAKOB ,  GRATZ ACHIM ,  POLEI VERONIKA ,  SPERL IRENE ,  RUDER THOMAS

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/485 ,  H01L23/60

Abstract: Process for reducing a plasma-induced charge in a semiconductor circuit having a support material (1), an electrically conducting layer (2), an auxiliary layer (3), an insulating layer (4) and a mask layer (5) comprises: removing the insulating layer using a plasma-promoted dry chemical method up to a minimum thickness using the mask layer; wet chemically removing the remaining insulating layer (R) up to the auxiliary layer using the mask layer; removing the mask layer; and wet chemically removing the auxiliary layer using the insulating layer as mask. Preferred Features: The insulating layer comprises an oxide layer and an oxynitride or nitride layer. The wet chemical removal step uses a hot aqueous solution having a high concentration of hydrogen super oxide.