公开(公告)号：WO2005096348A3

公开(公告)日：2005-12-08

申请号：PCT/DE2005000559

申请日：2005-03-30

Applicant: INFINEON TECHNOLOGIES AG ,  KLAUK HAGEN ,  HALIK MARCUS ,  ZSCHIESCHANG UTE ,  SCHMID GUENTER ,  DARLINSKI GRZEGORZ ,  WASER RAINER ,  BREDERLOW RALF

Inventor： KLAUK HAGEN ,  HALIK MARCUS ,  ZSCHIESCHANG UTE ,  SCHMID GUENTER ,  DARLINSKI GRZEGORZ ,  WASER RAINER ,  BREDERLOW RALF

IPC: G01L9/00 ,  G06F3/033 ,  G06K9/00 ,  H01L51/30 ,  H01L51/20

CPC classification number: G06K9/00053

Abstract: The invention relates to a force sensor based on an organic field effect transistor (10) that is applied to a substrate (1; 11). According to the invention, a mechanical force that acts on the transistor causes a corresponding modification of the source-drain voltage or the source-drain current (ID), whereby said modification can be respectively detected as a measured variable (Vmess, Imess) for the exerted force. The invention also relates to a membrane-based pressure sensor that uses a force sensor of this type, to a one- or two-dimensional position sensor that uses a plurality of force sensors of this type and to a fingerprint sensor that uses a plurality of force sensors of this type.

Abstract translation: 本发明涉及一种基于一个力传感器的基板上（1; 11）施加的有机场效应晶体管（10），其特征在于，作用在所述晶体管的机械力相应改变其源 - 漏电压或它的源极 - 漏极这些力中的一个的力 电流（ID）给出，其中各测量变量（VMEAS，Imess）是可检测的对所施加的力，一个这样的力传感器中使用基于膜的压力传感器，多个这样的力传感器的使用的一个或二维位置传感器和多个使用指纹传感器这样的力传感器。

公开(公告)号：DE102004016155B3

公开(公告)日：2006-05-24

申请号：DE102004016155

申请日：2004-04-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KLAUK HAGEN ,  HALIK MARCUS ,  ZSCHIESCHANG UTE ,  SCHMID GUENTER ,  DARLINSKI GRZEGORZ ,  WASER RAINER ,  BREDERLOW RALF

IPC: H01L51/05 ,  G01L1/00 ,  G01L1/22 ,  G01L9/00 ,  G01L9/04 ,  G06F3/033 ,  G06K9/00 ,  H01L29/84 ,  H01L51/30

Abstract: A force sensor based on an organic field effect transistor applied on a substrate is disclosed. In one embodiment, a mechanical force acting on the transistor causes a change in its source-drain voltage or its source-drain current which corresponds to said force and which can in each case be detected as measurement quantity for the acting force, a diaphragm-based pressure sensor that uses a force sensor of this type, a one- or two-dimensional position sensor that uses a multiplicity of force sensors of this type, and a fingerprint sensor that uses a multiplicity of such force sensors.

公开(公告)号：DE10041699A1

公开(公告)日：2002-03-21

申请号：DE10041699

申请日：2000-08-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BACHHOFER HARALD ,  HANEDER THOMAS ,  SPINDLER OSWALD ,  WASER RAINER

IPC: H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8239 ,  H01L41/22

Abstract: In a method for producing ferroelectric strontium bismuth tantalate having the composition SrxBiyTa2O9 (SBT) or SrxBiy(Ta, Nb)2O9 (SBTN), the element strontium, which is normally present in an amount y=2, is provided in excess in a range from 2.1