公开(公告)号：US10991877B2

公开(公告)日：2021-04-27

申请号：US16560357

申请日：2019-09-04

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Meiyin Yang ,  Jun Luo ,  Sumei Wang ,  Jing Xu ,  Yanru Li ,  Junfeng Li ,  Yan Cui ,  Wenwu Wang ,  Tianchun Ye

IPC: H01L43/12 ,  H01F41/32 ,  H01F10/32 ,  G11C11/16 ,  H01L43/02 ,  H01L43/10 ,  G11C11/56 ,  H01L27/22

Abstract: A multi-state memory and a method for manufacturing the same. A magnetoresistive tunnel junction is disposed on a spin-orbit coupling layer, and thermal annealing is performed after dopant ions are injected from a side of the magnetoresistive tunnel junction. The concentration of dopant ions in the magnetoresistive tunnel junction has a gradient variation along the direction that is perpendicular to the direction of the current and within the plane in which the spin-orbit coupling layer is located. Symmetry along the direction perpendicular to the direction of the current is broken. In a case a current flows into the spin-orbit coupling layer, resistance are outputted in multiple states in linearity with the current. The multi-state storage is achieved. It can meet a requirement on hardware of neural network synapses, and is applicable to calculation in a neural network.