公开(公告)号：DE10296984T5

公开(公告)日：2004-10-14

申请号：DE10296984

申请日：2002-06-28

Applicant: INTEL CORP

Inventor： ISENBERGER MARK ,  MU XIAO-CHUN ,  LI JIAN

IPC: H01L21/28 ,  H01L27/115 ,  H01L29/51 ,  G11C11/22 ,  H01L21/64

Abstract: One embodiment of the invention relates to a polymer memory device and a method of making it. The polymer memory device may include a composite or single layer of a ferroelectric polymer memory that addresses surface engineering needs according to various embodiments. The ferroelectric polymer memory structure may include crystalline ferroelectric polymer layers such as single and co-polymer compositions. The structure may include spin-on and/or Langmuir-Blodgett deposited compositions. One embodiment of the invention relates to a method making embodiments of the polymer memory device. One embodiment of the invention relates to a memory system that allows the polymer memory device to interface with various existing hosts.

公开(公告)号：AT515033T

公开(公告)日：2011-07-15

申请号：AT04781827

申请日：2004-08-20

Applicant: INTEL CORP

Inventor： ISENBERGER MARK

IPC: G11C11/22

公开(公告)号：AT491208T

公开(公告)日：2010-12-15

申请号：AT04820020

申请日：2004-11-12

Applicant: INTEL CORP

Inventor： LUEKER JONATHAN ,  FABER ROBERT ,  ISENBERGER MARK

IPC: G11C11/22 ,  G06F12/08

Abstract: Briefly, in accordance with an embodiment of the invention, an apparatus and method to improve memory performance is provided. The method may include performing a read cycle that includes a destructive read operation and a write back operation, wherein the destructive read operation includes reading information from a first memory cell of a memory and wherein the write back operation includes writing the information read from the first memory cell to a second memory cell of the memory.

公开(公告)号：DE10296984B4

公开(公告)日：2009-01-15

申请号：DE10296984

申请日：2002-06-28

Applicant: INTEL CORP

Inventor： ISENBERGER MARK ,  MU XIAO-CHUN ,  LI JIAN

IPC: G11C11/22 ,  H01L21/28 ,  H01L21/64 ,  H01L27/115 ,  H01L29/06 ,  H01L29/51

Abstract: One embodiment of the invention relates to a polymer memory device and a method of making it. The polymer memory device may include a composite or single layer of a ferroelectric polymer memory that addresses surface engineering needs according to various embodiments. The ferroelectric polymer memory structure may include crystalline ferroelectric polymer layers such as single and co-polymer compositions. The structure may include spin-on and/or Langmuir-Blodgett deposited compositions. One embodiment of the invention relates to a method making embodiments of the polymer memory device. One embodiment of the invention relates to a memory system that allows the polymer memory device to interface with various existing hosts.

公开(公告)号：DE102020130278A1

公开(公告)日：2021-08-26

申请号：DE102020130278

申请日：2020-11-17

Applicant: INTEL CORP

Inventor： HECK JOHN ,  HE LINA ,  PARK SUNGBONG ,  DOSUNMU OLUFEMI ISIADE ,  FRISH HAREL ,  MAGRUDER KELLY CHRISTOPHER ,  SLAVIN SETH M ,  QIAN WEI ,  LIU ANSHENG ,  GAUTAM NUTAN ,  ISENBERGER MARK

IPC: H04J14/02

Abstract: Ausführungsformen können einen Wellenlängenmultiplex(WDM)-Sendeempfänger betreffen, der eine Siliciumwellenleiterschicht aufweist, die mit einer Siliciumnitridwellenleiterschicht gekoppelt ist. Bei manchen Ausführungsformen kann die Siliciumwellenleiterschicht einen sich verjüngenden Teil beinhalten, der mit der Siliciumnitridwellenleiterschicht gekoppelt ist. Bei manchen Ausführungsformen kann die Siliciumwellenleiterschicht mit einer ersten Oxidschicht mit einer ersten z-Höhe gekoppelt werden und kann die Siliciumnitridwellenleiterschicht mit einer zweiten Oxidschicht mit einer zweiten z-Höhe gekoppelt werden, die größer als die erste z-Höhe ist. Andere Ausführungsformen können beschrieben oder beansprucht werden.

公开(公告)号：DE602004030475D1

公开(公告)日：2011-01-20

申请号：DE602004030475

申请日：2004-11-12

Applicant: INTEL CORP

Inventor： LUEKER JONATHAN ,  FABER ROBERT ,  ISENBERGER MARK

IPC: G11C11/22 ,  G06F12/08

公开(公告)号：AU2002345992A1

公开(公告)日：2003-03-03

申请号：AU2002345992

申请日：2002-06-28

Applicant: INTEL CORP

Inventor： MU XIAO-CHUN ,  ISENBERGER MARK ,  LI JIAN

IPC: H01L21/28 ,  H01L27/115 ,  H01L29/51 ,  G11C11/22 ,  H01L21/64

Abstract: One embodiment of the invention relates to a polymer memory device and a method of making it. The polymer memory device may include a composite or single layer of a ferroelectric polymer memory that addresses surface engineering needs according to various embodiments. The ferroelectric polymer memory structure may include crystalline ferroelectric polymer layers such as single and co-polymer compositions. The structure may include spin-on and/or Langmuir-Blodgett deposited compositions. One embodiment of the invention relates to a method making embodiments of the polymer memory device. One embodiment of the invention relates to a memory system that allows the polymer memory device to interface with various existing hosts.