公开(公告)号：DE60143178D1

公开(公告)日：2010-11-18

申请号：DE60143178

申请日：2001-06-15

Applicant: JSR CORP ,  IBM

Inventor： NISHIMURA YUKIO ,  YAMAHARA NOBORU ,  YAMAMOTO MASAFUMI ,  KAJITA TORU ,  SHIMOKAWA TSUTOMU ,  ITO HIROSHI

IPC: G03F7/004 ,  C08K5/00 ,  C08L33/06 ,  C08L35/00 ,  C08L45/00 ,  G03F7/039 ,  H01L21/027

公开(公告)号：EP1398339A4

公开(公告)日：2006-11-29

申请号：EP02722907

申请日：2002-04-30

Applicant: JSR CORP

Inventor： IWASAWA HARUO ,  HAYASHI AKIHIRO ,  SHIMOKAWA TSUTOMU ,  YAMAMOTO MASAFUMI

IPC: C08G77/08 ,  C08G77/22 ,  C08G77/24 ,  G03F7/004 ,  G03F7/039 ,  G03F7/075 ,  H01L21/027 ,  C08L83/08

CPC classification number: G03F7/0397 ,  C08G77/08 ,  C08G77/24 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0757

Abstract: A polysiloxane resin exhibiting high transparency even at a wavelength of 193nm (particularly 157nm) or below and excellent dry etching resistance, which comprises units represented by the general formula (I) and/or the general formula (II) and has acid−dissociable groups: (I) (II) (wherein R 1 is a fluorinated or fluoroalkylated monovalent aromatic group or a fluorinated or fluoroalkylated monovalent alicyclic group; and R 2 is a monovalent aromatic group described above, a monovalent alicyclic group described above, hydrogen, halogeno, a monovalent hydrocarbon group, haloalkyl, or amino). A radiation−sensitive resin composition excellent in sensitivity and resolution, which comprises (A) the above resin and (B) a radiation−sensitive acid generator.

公开(公告)号：DE60235663D1

公开(公告)日：2010-04-29

申请号：DE60235663

申请日：2002-01-17

Applicant: JSR CORP

Inventor： NISHIMURA YUKIO ,  YAMAMOTO MASAFUMI ,  KATAOKA ATSUKO ,  KAJITA TORU

IPC: G03F7/038 ,  G03F7/039 ,  G03F7/004

Abstract: A radiation-sensitive resin composition comprising: (A) an acid-dissociable group-containing resin, insoluble or scarcely soluble in alkali but becoming soluble in alkali when the acid-dissociable group dissociates, and containing recurring units with specific structures and (B) a photoacid generator of the formula (3), wherein R represents a monovalent aromatic hydrocarbon group, m is 1-8, and n is 0-5. The resin composition is suitable as a chemically-amplified resist responsive to deep ultraviolet rays such as a KrF excimer laser and ArF excimer laser, exhibits high transparency, excellent resolution, dry etching resistance, and sensitivity, produces good pattern shapes, and well adheres to substrates.