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    MEASURING OVERLAY AND PROFILE ASYMMETRY USING SYMMETRIC AND ANTI-SYMMETRIC SCATTEROMETRY SIGNALS
    1.
    发明申请
    MEASURING OVERLAY AND PROFILE ASYMMETRY USING SYMMETRIC AND ANTI-SYMMETRIC SCATTEROMETRY SIGNALS 审中-公开
    使用对称和对称分析信号测量覆盖和轮廓不对称

    公开(公告)号：WO2006133258A3

    公开(公告)日：2007-03-29

    申请号：PCT/US2006022059

    申请日：2006-06-06

    Applicant: KLA TENCOR TECH CORP ,  KANDEL DANIEL ,  GROSS KEN ,  FRIEDMANN MICHAEL ,  FU JIYOU ,  KRISHNAN SHANKAR ,  GOLOVANEVSKY BORIS

    Inventor： KANDEL DANIEL ,  GROSS KEN ,  FRIEDMANN MICHAEL ,  FU JIYOU ,  KRISHNAN SHANKAR ,  GOLOVANEVSKY BORIS

    IPC: G01J4/00

    CPC classification number: G01N21/211 ,  G01N21/9501 ,  G01N21/956 ,  G03F7/70633

    Abstract: Systems and methods are disclosed for using ellipsometer configurations to measure the partial Mueller matrix and the complete Jones matrix of a system that may be isotropic or anisotropic. In one embodiment two or more signals, which do not necessarily satisfy any symmetry assumptions individually, are combined into a composite signal which satisfies a symmetry assumption. The individual signals are collected at two or more analyzer angles. Symmetry properties of the composite signals allow easy extraction of overlay information for any relative orientation of the incident light beam with respect to a ID grating target, as well as for targets comprising general 2D gratings. Signals of a certain symmetry property also allow measurement of profile asymmetry in a very efficient manner. In another embodiment a measurement methodology is defined to measure only signals which satisfy a symmetry assumption. An optional embodiment comprises a single polarization element serving as polarizer (111) and analyzer (115). Another optional embodiment uses an analyzing prism (144) to simultaneously collect two polarization components of reflected light.

    Abstract translation: 公开了使用椭偏仪配置来测量可能是各向同性或各向异性的系统的部分Mueller矩阵和完整琼斯矩阵的系统和方法。 在一个实施例中，不一定满足任何对称假设的两个或更多个信号被组合成满足对称假设的复合信号。 各个信号以两个或多个分析器角度收集。 复合信号的对称属性允许容易地提取用于入射光束相对于ID光栅目标的任何相对取向以及包括通用2D光栅的目标的覆盖信息。 具有某种对称性质的信号也可以以非常有效的方式测量轮廓不对称。 在另一个实施例中，测量方法被定义为仅测量满足对称假设的信号。 可选实施例包括用作偏振器（111）和分析器（115）的单个偏振元件。 另一个可选实施例使用分析棱镜（144）同时收集反射光的两个偏振分量。

    APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY
    4.
    发明公开
    APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY 有权
    装置和一种用于识别覆盖误差按用途杂散测量调查研究

    公开(公告)号：EP1570232A4

    公开(公告)日：2007-08-29

    申请号：EP03796723

    申请日：2003-12-05

    Applicant: KLA TENCOR TECH CORP

    Inventor： MIEHER WALTER D ,  LEVY ADY ,  GOLOVANEVSKY BORIS ,  FRIEDMANN MICHAEL ,  SMITH IAN ,  ADEL MICHAEL ,  FABRIKANT ANATOLY ,  BEVIS CHRISTOPHER F ,  FIELDEN JOHN ,  BAREKET NOAH ,  GROSS KEN ,  ZALICKI PIOTR ,  WACK DAN ,  DECECCO PAOLA ,  DZIURA THADDEUS G

    IPC: G03F7/20 ,  G03F9/00 ,  G01B11/00

    CPC classification number: G03F9/7088 ,  G03F7/70633 ,  G03F9/7049 ,  G03F9/7084

    Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb between its first and second structures portions; target C is designed to have an offset Xc between its first and second structures portions; and target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd. The targets A, B, C and D are illuminated with electromagnetic radiation to obtain spectra SA, SB, SC, and SD from targets A, B, C, and D, respectively. Any overlay error between the first structures and the second structures is then determined using a linear approximation based on the obtained spectra SA, SB, SC, and SD.

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