METHOD AND SYSTEM FOR CENTERING WAFER ON CHUCK
    2.
    发明申请
    METHOD AND SYSTEM FOR CENTERING WAFER ON CHUCK 审中-公开
    用于在卡盘上定中晶片的方法和系统

    公开(公告)号:WO2010067284A2

    公开(公告)日:2010-06-17

    申请号:PCT/IB2009055503

    申请日:2009-12-04

    Abstract: A wafer handling mechanism is operated to place a wafer on a chuck. A chucking force is then applied to the wafer, whereby wafer support features of the chuck transfer a defect pattern onto a surface of the wafer. The surface of the wafer is analyzed by a defect metrology tool to obtain a mapping of the defect pattern transferred onto the surface of the wafer. A center coordinate of the chuck within a coordinate system of the wafer is determined by analyzing the defect pattern as transferred to the surface of the wafer. A spatial offset between the center coordinate of the chuck and the center of the wafer is determined. The spatial offset is used to adjust the wafer handling mechanism so as to enable alignment of the center of the wafer to the center coordinate of the chuck.

    Abstract translation: 操作晶片处理机构以将晶片放置在卡盘上。 然后将夹紧力施加到晶片,由此夹盘的晶片支撑特征将缺陷图案转移到晶片的表面上。 通过缺陷度量工具分析晶片的表面,以获得转移到晶片表面上的缺陷图案的映射。 通过分析传送到晶片表面的缺陷图案来确定晶片的坐标系内的卡盘的中心坐标。 确定卡盘的中心坐标和晶片的中心之间的空间偏移。 空间偏移用于调整晶片处理机构,以使晶片的中心能够对准卡盘的中心坐标。

    METHOD AND APPARATUS OF HALOGEN REMOVAL
    3.
    发明申请
    METHOD AND APPARATUS OF HALOGEN REMOVAL 审中-公开
    杀虫剂的方法和装置

    公开(公告)号:WO2011056484A3

    公开(公告)日:2011-08-04

    申请号:PCT/US2010053858

    申请日:2010-10-22

    Abstract: A wafer is provided into an entrance load lock chamber. A vacuum is created in the entrance load lock chamber. The wafer is transported to a processing tool. The wafer is processed in a process chamber to provide a processed wafer, wherein the processing forms halogen residue. A degas step is provided in the process chamber after processing the wafer. The processed wafer is transferred into a degas chamber. The processed wafer is treated in the degas chamber with UV light and a flow of gas comprising at least one of ozone, oxygen, or H2O. The flow of gas is stopped. The UV light is stopped. The processed wafer is removed from the degas chamber.

    Abstract translation: 将晶片设置在入口加载锁定室中。 在入口装载锁定室中产生真空。 晶片被输送到处理工具。 在处理室中处理晶片以提供经处理的晶片,其中处理形成卤素残余物。 在处理晶片之后,在处理室中提供脱气步骤。 将经处理的晶片转移到脱气室中。 处理的晶片在脱气室中用UV光和包含臭氧,氧气或H 2 O中的至少一种的气体流进行处理。 停止气体流动。 UV灯停止。 将经处理的晶片从脱气室中取出。

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