公开(公告)号：SG174500A1

公开(公告)日：2011-10-28

申请号：SG2011068251

申请日：2010-04-05

Applicant: LAM RES CORP

Inventor： JI BING ,  TAKESHITA KENJI ,  BAILEY ANDREW D III ,  HUDSON ERIC A ,  MORAVEJ MARYAM ,  SIRARD STEPHEN M ,  KO JUNGMIN ,  LE DANIEL ,  HEFTY ROBERT C ,  CHENG YU ,  DELGADINO GERATDO A ,  YEN BI-MING

Abstract: A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.