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    IN-SITU PHOTORESIST STRIP DURING PLASMA ETCHING OF ACTIVE HARD MASK
    1.
    发明申请
    IN-SITU PHOTORESIST STRIP DURING PLASMA ETCHING OF ACTIVE HARD MASK 审中-公开
    活性硬掩模等离子刻蚀中的原位光刻条

    公开(公告)号：WO2008147756A4

    公开(公告)日：2009-07-09

    申请号：PCT/US2008064159

    申请日：2008-05-19

    Applicant: LAM RES CORP ,  CHO SANGJUN ,  CHOI TOM ,  HAN TAEJOON ,  KANG SEAN ,  GOPALADASU PRABHAKARA ,  YEN BI-MING

    Inventor： CHO SANGJUN ,  CHOI TOM ,  HAN TAEJOON ,  KANG SEAN ,  GOPALADASU PRABHAKARA ,  YEN BI-MING

    IPC: H01L21/3065 ,  H01L21/027

    CPC classification number: H01L21/3081 ,  G03F7/427 ,  H01L21/31138 ,  H01L21/32139

    Abstract: A method for etching features in a silicon layer is provided. A hard mask layer is formed over the silicon layer. A photoresist layer is formed over the hard mask layer. The hard mask layer is opened. The photoresist layer is stripped by providing a stripping gas; forming a plasma with the stripping gas by providing a high frequency RF power and a low frequency RF power, wherein the low frequency RF power has a power less than 50 watts; and stopping the stripping gas when the photoresist layer is stripped. The opening the hard mask layer and the stripping the photoresist layer are performed in a same chamber.

    Abstract translation: 提供了一种用于蚀刻硅层中的特征的方法。 在硅层上形成硬掩模层。 在硬掩模层上形成光致抗蚀剂层。 硬掩模层被打开。 通过提供汽提气体来剥离光致抗蚀剂层; 通过提供高频RF功率和低频RF功率形成具有剥离气体的等离子体，其中低频RF功率具有小于50瓦的功率; 并且当光致抗蚀剂层被剥离时停止剥离气体。 在同一腔室中进行硬掩模层的开口和光刻胶层的剥离。

    METHODS FOR THE OPTIMIZATION OF SUBSTRATE ETCHING IN A PLASMA PROCESSING SYSTEM
    2.
    发明申请
    METHODS FOR THE OPTIMIZATION OF SUBSTRATE ETCHING IN A PLASMA PROCESSING SYSTEM 审中-公开
    在等离子体处理系统中优化基板蚀刻的方法

    公开(公告)号：WO2005091974A3

    公开(公告)日：2006-09-21

    申请号：PCT/US2005007886

    申请日：2005-03-09

    Applicant: LAM RES CORP ,  KIM JISOO ,  WORSHAM BINET ,  YEN BI-MING ,  LOEWENHARDT PETER K

    Inventor： KIM JISOO ,  WORSHAM BINET ,  YEN BI-MING ,  LOEWENHARDT PETER K

    IPC: C23F1/00 ,  B44C1/22 ,  C03C15/00 ,  H01L21/302 ,  H01L21/311 ,  H01L21/768

    CPC classification number: H01L21/31144 ,  H01L21/76811 ,  H01L21/76813

    Abstract: A method of etching a substrate in a plasma processing system is disclosed. The substrate has a semi-conductor layer, a first barrier layer disposed above the semi-conductor layer, a low-k layer disposed above the first barrier layer, a third hard mask layer disposed above the low-k layer; a second hard mask layer disposed above the third hard mask layer, and a first hard mask layer disposed above the second hard mask layer. The method includes alternatively etching the substrate with a first etchant and a second etchant, wherein the first etchant has a low selectivity to a first hard mask material of the first hard mask layer, a third hard mask material of the a third hard mask layer, and a first barrier layer material of the first barrier layer, but a high selectivity to a second hard mask material of the second hard mask layer; and wherein the second etchant has a high selectivity to the first hard mask material of the first hard mask layer, the third hard mask material of the third hard mask layer, and the first barrier layer material of the first barrier layer, and the first etchant has a low selectivity to the second hard mask material of the second hard mask layer.

    Abstract translation: 公开了一种在等离子体处理系统中蚀刻衬底的方法。 衬底具有半导体层，设置在半导体层上方的第一势垒层，设置在第一阻挡层上方的低k层，设置在低k层上方的第三硬掩模层; 设置在第三硬掩模层之上的第二硬掩模层，以及设置在第二硬掩模层上方的第一硬掩模层。 所述方法包括用第一蚀刻剂和第二蚀刻剂替代地蚀刻所述衬底，其中所述第一蚀刻剂对所述第一硬掩模层的第一硬掩模材料具有低选择性，所述第三硬掩模层的第三硬掩模材料， 和第一阻挡层的第一阻挡层材料，但对第二硬掩模层的第二硬掩模材料具有高选择性; 并且其中第二蚀刻剂对第一硬掩模层的第一硬掩模材料，第三硬掩模层的第三硬掩模材料和第一阻挡层的第一阻挡层材料和第一蚀刻剂具有高选择性 对第二硬掩模层的第二硬掩模材料具有低选择性。

    METHODS FOR THE OPTIMIZATION OF SUBSTRATE ETCHING IN A PLASMA PROCESSING SYSTEM
    3.
    发明申请
    METHODS FOR THE OPTIMIZATION OF SUBSTRATE ETCHING IN A PLASMA PROCESSING SYSTEM 审中-公开
    在等离子体处理系统中优化基板蚀刻的方法

    公开(公告)号：WO2005091974A9

    公开(公告)日：2005-11-24

    申请号：PCT/US2005007886

    申请日：2005-03-09

    Applicant: LAM RES CORP ,  KIM JISOO ,  WORSHAM BINET ,  YEN BI-MING ,  LOEWENHARDT PETER K

    Inventor： KIM JISOO ,  WORSHAM BINET ,  YEN BI-MING ,  LOEWENHARDT PETER K

    IPC: B44C1/22 ,  C03C15/00 ,  C23F1/00 ,  H01L21/302 ,  H01L21/311 ,  H01L21/768

    CPC classification number: H01L21/31144 ,  H01L21/76811 ,  H01L21/76813

    Abstract: A method of etching a substrate in a plasma processing system is disclosed. The substrate has a semi-conductor layer, a first barrier layer disposed above the semi-conductor layer, a low-k layer disposed above the first barrier layer, a third hard mask layer disposed above the low-k layer; a second hard mask layer disposed above the third hard mask layer, and a first hard mask layer disposed above the second hard mask layer. The method includes alternatively etching the substrate with a first etchant and a second etchant, wherein the first etchant has a low selectivity to a first hard mask material of the first hard mask layer, a third hard mask material of the a third hard mask layer, and a first barrier layer material of the first barrier layer, but a high selectivity to a second hard mask material of the second hard mask layer; and wherein the second etchant has a high selectivity to the first hard mask material of the first hard mask layer, the third hard mask material of the third hard mask layer, and the first barrier layer material of the first barrier layer, and the first etchant has a low selectivity to the second hard mask material of the second hard mask layer.

    Abstract translation: 公开了一种在等离子体处理系统中蚀刻衬底的方法。 衬底具有半导体层，设置在半导体层上方的第一势垒层，设置在第一阻挡层上方的低k层，设置在低k层上方的第三硬掩模层; 设置在第三硬掩模层之上的第二硬掩模层，以及设置在第二硬掩模层上方的第一硬掩模层。 所述方法包括用第一蚀刻剂和第二蚀刻剂替代地蚀刻所述衬底，其中所述第一蚀刻剂对所述第一硬掩模层的第一硬掩模材料具有低选择性，所述第三硬掩模层的第三硬掩模材料， 和第一阻挡层的第一阻挡层材料，但对第二硬掩模层的第二硬掩模材料具有高选择性; 并且其中第二蚀刻剂对第一硬掩模层的第一硬掩模材料，第三硬掩模层的第三硬掩模材料和第一阻挡层的第一阻挡层材料和第一蚀刻剂具有高选择性 对第二硬掩模层的第二硬掩模材料具有低选择性。

    IN-SITU PHOTORESIST STRIP DURING PLASMA ETCHING OF ACTIVE HARD MASK
    6.
    发明申请
    IN-SITU PHOTORESIST STRIP DURING PLASMA ETCHING OF ACTIVE HARD MASK 审中-公开
    活动硬掩模等离子体蚀刻中的现场光电子条纹

    公开(公告)号：WO2008147756A3

    公开(公告)日：2009-01-29

    申请号：PCT/US2008064159

    申请日：2008-05-19

    Applicant: LAM RES CORP ,  CHO SANGJUN ,  CHOI TOM ,  HAN TAEJOON ,  KANG SEAN ,  GOPALADASU PRABHAKARA ,  YEN BI-MING

    Inventor： CHO SANGJUN ,  CHOI TOM ,  HAN TAEJOON ,  KANG SEAN ,  GOPALADASU PRABHAKARA ,  YEN BI-MING

    IPC: H01L21/3065 ,  H01L21/027

    CPC classification number: H01L21/3081 ,  G03F7/427 ,  H01L21/31138 ,  H01L21/32139

    Abstract: A method for etching features in a silicon layer is provided. A hard mask layer is formed over the silicon layer. A photoresist layer is formed over the hard mask layer. The hard mask layer is opened. The photoresist layer is stripped by providing a stripping gas; forming a plasma with the stripping gas by providing a high frequency RF power and a low frequency RF power, wherein the low frequency RF power has a power less than 50 watts; and stopping the stripping gas when the photoresist layer is stripped. The opening the hard mask layer and the stripping the photoresist layer are performed in a same chamber.

    Abstract translation: 提供了一种用于蚀刻硅层中的特征的方法。 在硅层上形成硬掩模层。 在硬掩模层上形成光致抗蚀剂层。 打开硬掩模层。 通过提供剥离气体来剥离光致抗蚀剂层; 通过提供高频RF功率和低频RF功率与剥离气体形成等离子体，其中低频RF功率具有小于50瓦的功率; 并且当剥离光致抗蚀剂层时停止剥离气体。 打开硬掩模层和剥离光致抗蚀剂层在相同的室中进行。

    10.
    发明专利
    未知

    公开(公告)号：AT425547T

    公开(公告)日：2009-03-15

    申请号：AT02746618

    申请日：2002-06-21

    Applicant: LAM RES CORP

    Inventor： YEN BI-MING ,  NI TUQIANG ,  LI LUMIN ,  HEMKER DAVID

    IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065

    Abstract: A plasma processing chamber is provided. The plasma processing chamber includes a bottom electrode configured to support a substrate and a top electrode located over the bottom electrode. The plasma processing chamber further includes a plasma confinement assembly designed to transition between a closed orientation and an open orientation. In the closed orientation, the plasma confinement assembly defines a first volume for plasma during processing, and in the open orientation, the plasma confinement assembly defines a second volume for plasma during processing which is larger than the first volume.

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