公开(公告)号：WO2010117964A3

公开(公告)日：2011-01-13

申请号：PCT/US2010030008

申请日：2010-04-05

Applicant: LAM RES CORP ,  JI BING ,  TAKESHITA KENJI ,  BAILEY ANDREW D III ,  HUDSON ERIC A ,  MORAVEJ MARYAM ,  SIRARD STEPHEN M ,  KO JUNGMIN ,  LE DANIEL ,  HEFTY ROBERT C ,  CHENG YU ,  DELGADINO GERARDO A ,  YEN BI-MING

Inventor： JI BING ,  TAKESHITA KENJI ,  BAILEY ANDREW D III ,  HUDSON ERIC A ,  MORAVEJ MARYAM ,  SIRARD STEPHEN M ,  KO JUNGMIN ,  LE DANIEL ,  HEFTY ROBERT C ,  CHENG YU ,  DELGADINO GERARDO A ,  YEN BI-MING

IPC: H01L21/3065 ,  H05H1/34

CPC classification number: H01L21/31116 ,  H01L21/02063 ,  H01L21/31138

Abstract: A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.

Abstract translation: 通过本发明的实施例提供了一种用于蚀刻位于有机掩模下方的低k电介质层中的特征的方法。 通过有机掩模将特征蚀刻到低k电介质层中。 在低k电介质层上沉积氟碳层。 氟碳层被固化。 剥去有机面膜。

公开(公告)号：WO2007008509A3

公开(公告)日：2009-04-23

申请号：PCT/US2006026095

申请日：2006-07-05

Applicant: LAM RES CORP ,  LARSON DEAN J ,  HEFTY ROBERT C ,  TIETZ JAMES V ,  KENNEDY WILLIAM S ,  LENZ ERIC H ,  DENTY WILLIAM M JR ,  MAGNI ENRICO

Inventor： LARSON DEAN J ,  HEFTY ROBERT C ,  TIETZ JAMES V ,  KENNEDY WILLIAM S ,  LENZ ERIC H ,  DENTY WILLIAM M JR ,  MAGNI ENRICO

IPC: G01F25/00

CPC classification number: G01F1/42 ,  G01F1/36 ,  G01F25/0007 ,  G05D7/0652

Abstract: Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber (12) are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice.

Abstract translation: 提供了一种测量用于向等离子体处理室（12）供应气体的气体供应系统中的气体流量的方法。 在差分流动方法中，流量控制器以不同的设定流量运行，并且在环境条件下测量设定流量的上游孔口压力。 测量的孔口压力参考二次流量验证方法，该方法为不同的设定流量产生相应的实际气体流速。 上游孔压力可以用作在室的任何温度条件下进行的随后的孔口压力测量的差分比较。 在绝对流动方法中，预定了所选择的气体和孔口的一些参数，并且在气体以流量控制器以设定流量通过孔口流动时，测量气体的其它参数。

公开(公告)号：JP2010109373A

公开(公告)日：2010-05-13

申请号：JP2009251663

申请日：2009-11-02

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： DELGADINO GERARDO A ,  HEFTY ROBERT C

IPC: H01L21/3065 ,  H01L21/027

CPC classification number: H01L21/76802 ,  H01L21/31138 ,  H01L21/31144

Abstract: PROBLEM TO BE SOLVED: To provide a method for controlling the critical dimension (CD) of etch features in an etching layer in a stack formed by a patterned photoresist mask, an intermediate mask layer disposed below the photoresist mask, a functionalized organic mask layer disposed below the intermediate mask layer, and an etching layer disposed below the functionalized organic mask layer. SOLUTION: The intermediate mask layer 416 is opened by selectively etching the patterned photoresist mask 420. This opening operation in a functionalized organic mask layer 412 includes a step of flowing an opening gas containing COS, for generating plasma, and for stopping flowing the opening gas. Thereafter, the etching layer 408 is etched to a desired dimension. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于控制由图案化光致抗蚀剂掩模形成的叠层中的蚀刻层中的蚀刻特征的临界尺寸（CD）的方法，设置在光致抗蚀剂掩模下方的中间掩模层，官能化有机 掩模层，以及设置在官能化有机掩模层下方的蚀刻层。 解决方案：通过选择性地蚀刻图案化的光致抗蚀剂掩模420来打开中间掩模层416.官能化有机掩模层412中的该打开操作包括使包含COS的开口气体流动以产生等离子体并停止流动的步骤 开放气体。 此后，蚀刻层408被蚀刻到期望的尺寸。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：SG174500A1

公开(公告)日：2011-10-28

申请号：SG2011068251

申请日：2010-04-05

Applicant: LAM RES CORP

Inventor： JI BING ,  TAKESHITA KENJI ,  BAILEY ANDREW D III ,  HUDSON ERIC A ,  MORAVEJ MARYAM ,  SIRARD STEPHEN M ,  KO JUNGMIN ,  LE DANIEL ,  HEFTY ROBERT C ,  CHENG YU ,  DELGADINO GERATDO A ,  YEN BI-MING

Abstract: A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.

公开(公告)号：MY155016A

公开(公告)日：2015-08-28

申请号：MYPI20063268

申请日：2006-07-10

Applicant: LAM RES CORP

Inventor： LARSON DEAN J ,  HEFTY ROBERT C ,  TIETZ JAMES V ,  KENNEDY WILLIAM S ,  LENZ ERIC H ,  DENTY WILLIAM M JR ,  MAGNI ENRICO

IPC: G01F25/00

Abstract: METHOD OF MEASURING GAS FLOW RATES IN A GAS SUPPLY SYSTEM (100) FOR SUPPLYING GAS TO A PLASMA PROCESSING CHAMBER (12) ARE PROVIDED. IN A DIFFERENTIAL FLOW METHOD, A FLOW CONTROLLER IS OPERATED AT DIFFERENT SET FLOW RATES, AND UPSTREAM ORIFICE PRESSURES ARE MEASURED FOR THE SET FLOW RATES AT AMBIENT CONDITIONS. THE MEASURED ORIFICE PRESSURE ARE REFERENCED TO A SECONDARY FLOW VERIFICATION METHOD THAT GENERATES CORRESPONDING ACTUAL GAS FLOW RATES FOR THE DIFFERENT SET FLOW RATES. THE UPSTREAM ORIFICE PRESSURES CAN BE USED AS A DIFFERENTIAL COMPARISON FOR SUBSEQUENT ORIFICE PRESSURE MEASUREMENT TAKEN AT ANY TEMPERATURE CONDITION OF THE CHAMBER. IN AN ABSOLUTE FLOW METHOD, SOME PARAMETERS OF A SELECTED GAS AND ORIFICE ARE PREDETERMINED, AND OTHER PARAMETER OF THE GAS ARE MEASURED WHILE THE GAS IS BEING FLOWED FROM A FLOW CONTROLLER SET POINT CAN BE FLOWED AR ANY TIME AND AT ANY CHAMBER CONDITION, SUCH AS DURING PLASMA PROCESSING OPERATION. GAS SUPPLY SYSTEMS (100) ARE ALSO DISCLOSED.