公开(公告)号：CA2091286A1

公开(公告)日：1994-01-21

申请号：CA2091286

申请日：1993-03-09

Applicant: MACDERMID INC

Inventor： GRUNWALD JOHN ,  GAL CHAVA ,  HIRSH SHULAMIT ,  MOZEL JACOB

IPC: G03F7/004 ,  B41M5/36 ,  C08G59/50 ,  G03F7/016 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  H05K3/00 ,  H05K3/06 ,  H05K3/18 ,  H05K3/28 ,  H05K3/46 ,  B41M5/24 ,  H05K3/02

Abstract: A process is described for the direct production of an imaged pattern of resist on a substrate surface (such as a pattern of etch-resistant organic resin material on the surface of a copper-clad dielectric in connection with a printed circuit board (PCB) fabrication process), which process utilizes thermo-resists rather than photoresists, i.e., compositions which undergo thermally-induced, rather than photo-induced, chemical transformations. A film of thermo-resist composition applied to the substrate surface is scanned by a focused heat source (e.g., a thermal laser emitting in the IR region) in a predetermined pattern, without a phototool, to bring about localized thermally-induced chemical transformations of the composition which either directly produce the resist pattern or produce in the film a developable latent image of the pattern.

公开(公告)号：DE3474971D1

公开(公告)日：1988-12-08

申请号：DE3474971

申请日：1984-05-21

Applicant: MACDERMID INC

Inventor： KUKANSKIS PETER ,  GRUNWALD JOHN ,  SAWOSKA DAVID

IPC: C23C18/18 ,  C23C18/28 ,  H05K3/42

公开(公告)号：DE3175316D1

公开(公告)日：1986-10-16

申请号：DE3175316

申请日：1981-12-21

Applicant: MACDERMID INC

Inventor： FERRIER DONALD R ,  RHODENIZER HAROLD L ,  KUKANSKIS PETER E ,  GRUNWALD JOHN

IPC: H05K3/18 ,  C23C18/40 ,  C23C18/54

公开(公告)号：CH647264A5

公开(公告)日：1985-01-15

申请号：CH478679

申请日：1979-05-22

Applicant: MACDERMID INC

Inventor： KUKANSKIS PETER ,  GRUNWALD JOHN ,  FERRIER DONALD ,  SAWOSKA DAVID

IPC: C23C18/40 ,  H05K3/18 ,  C25D5/34 ,  C25D5/56

公开(公告)号：EP0096034A4

公开(公告)日：1984-05-03

申请号：EP82900581

申请日：1981-12-21

Applicant: MACDERMID INC

Inventor： FERRIER DONALD R ,  RHODENIZER HAROLD L ,  KUKANSKIS PETER E ,  GRUNWALD JOHN

IPC: H05K3/18 ,  C23C18/40 ,  C23C3/02

CPC classification number: C23C18/40

Abstract: Suitably complexed cupric solutions can deposit conductive copper films electrolessly on properly catalyzed non-conductive substrates, at plating bath pH values in the range of about 2.0 to 3.5, using a non-formaldehyde reducer such as hypophosphite. Certain conditions are critical to successful results: (1) ability of the complexer selected to chelate copper at pH values of 2.0 to 3.5 at elevated temperatures (140 to 160 F); (2) avoidance of certain anions, such as halides and acetates, in significant concentrations in the plating solution; and (3) provision of an "active" catalytic surface on the non-conductive substrate.