2.
    发明专利
    未知

    公开(公告)号:DE68916855T2

    公开(公告)日:1995-01-19

    申请号:DE68916855

    申请日:1989-05-12

    Abstract: This invention relates to a semiconductor non-volatile memory device, in which plural data storage parts are connected in series between the source region and drain region. In such constitution, when integrating the semiconductors, the relative area occupied by the selection gate, separation gate, source region and drain region of the area of the data storage parts may be drastically reduced, and the degree of integration of semiconductor non-volatile memory device can be dramatically enhanced. This invention also comprises means for setting the semiconductor substrate in depletion state by sequentially varying the gate potential of the plural data storage parts and transferring the electric charges sequentially. By this means for transferring electric charges, data write errors may be securely prevented.

    3.
    发明专利
    未知

    公开(公告)号:DE68916855D1

    公开(公告)日:1994-08-25

    申请号:DE68916855

    申请日:1989-05-12

    Abstract: This invention relates to a semiconductor non-volatile memory device, in which plural data storage parts are connected in series between the source region and drain region. In such constitution, when integrating the semiconductors, the relative area occupied by the selection gate, separation gate, source region and drain region of the area of the data storage parts may be drastically reduced, and the degree of integration of semiconductor non-volatile memory device can be dramatically enhanced. This invention also comprises means for setting the semiconductor substrate in depletion state by sequentially varying the gate potential of the plural data storage parts and transferring the electric charges sequentially. By this means for transferring electric charges, data write errors may be securely prevented.

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