Abstract:
The present invention provides a printed wiring board, an IC card module including the printed wiring board, and a method for fabricating the IC card module, for improving reliability of IC cards. The printed wiring board and the IC card module of the invention include: a base having a resin sealing region, clamped regions in a periphery zone of the resin sealing region clamped with a sealing mold, and non-clamped regions in the periphery zone; and terminals for external connection formed on the top surface of the base. The terminals are formed in a region other than any of the resin sealing region, the clamped regions, and the non-claimed regions.
Abstract:
This invention relates to a semiconductor non-volatile memory device, in which plural data storage parts are connected in series between the source region and drain region. In such constitution, when integrating the semiconductors, the relative area occupied by the selection gate, separation gate, source region and drain region of the area of the data storage parts may be drastically reduced, and the degree of integration of semiconductor non-volatile memory device can be dramatically enhanced. This invention also comprises means for setting the semiconductor substrate in depletion state by sequentially varying the gate potential of the plural data storage parts and transferring the electric charges sequentially. By this means for transferring electric charges, data write errors may be securely prevented.
Abstract:
This invention relates to a semiconductor non-volatile memory device, in which plural data storage parts are connected in series between the source region and drain region. In such constitution, when integrating the semiconductors, the relative area occupied by the selection gate, separation gate, source region and drain region of the area of the data storage parts may be drastically reduced, and the degree of integration of semiconductor non-volatile memory device can be dramatically enhanced. This invention also comprises means for setting the semiconductor substrate in depletion state by sequentially varying the gate potential of the plural data storage parts and transferring the electric charges sequentially. By this means for transferring electric charges, data write errors may be securely prevented.