公开(公告)号：MY157968A

公开(公告)日：2016-08-30

申请号：MYPI20071992

申请日：2007-11-14

Applicant: MIMOS BERHAD

Inventor： BUYONG MUHAMAD RAMDZAN

IPC: A61M5/158

Abstract: 14 ABSTARCT METHOD FOR FABRICATING MICRONEEDLES AND MICRONEEDLE FABRICATED FROM THE SAME THIS INVENTION RELATES TO A METHOD OF FABRICATING MICRONEEDLES USING DRY 5 ETCHING METHODS ON A SILICON BASED MATERIAL AND MORE PARTICULARLY A METHOD OF FABRICATINA HOLLOW OUT-OF-PLANE MICRONEEDLES WHICH ARE ARRANGED IN A SINGLE ROW OF AT LEAST TWO MICRONEEDLES. THE FABRICATION PROCESS COMPRISES OF MULTIPLE STEPS INVOLVING REACTIVE ION ETCHING (RIE) ISOTROPIC AND DEEP REACTIVE ION ETCHING (DRIE) ANISOTROPIC PROCESSES. THE PROCESS INVOLVED ONLY DRY I 0 ETCHING AND THE ISOTROPIC PROCESS STEP PARTICULARLY, INCLUDES PLASMA ETCH. MOST ILLUSTRATIVEFIGURE IS

公开(公告)号：MY155581A

公开(公告)日：2015-11-03

申请号：MYPI20072171

申请日：2007-12-05

Applicant: MIMOS BERHAD

Inventor： BUYONG MUHAMAD RAMDZAN

IPC: H01L21/208

Abstract: A METHOD OF INSULATING A MICROMECHANICAL WAFER (10) WITH A DIELECTRIC LAYER (23) OVER SAID MICROMECHANICAL WAFER (10) USING A SPINNING TECHNIQUE. THE DIELECTRIC LAYER (23) IS THEN HEATED TO REMOVE WATER AND CURED THE LAYER OF THE MICROMECHANICAL DEVICE (10) TO PROVIDE A PROTECTIVE COATING TO THE MICROMECHANICAL DEVICE. MOST ILLUSTRATIVE DIAGRAM:

公开(公告)号：MY143881A

公开(公告)日：2011-07-15

申请号：MYPI20071932

申请日：2007-11-07

Applicant: MIMOS BERHAD

Inventor： BUYONG MUHAMAD RAMDZAN ,  ZAIN AZLINA MOHD ,  MOHAMAD SITI AISHAH ,  SYONO MOHD ISMAHADI ,  WAH LEE HING ,  KASJOO SHAHRIR RIZAL

IPC: B81C1/00

Abstract: FABRICATION METHOD OF A MICROMECHANICAL DEVICE 5 A METHOD FOR FABRICATING A MICROMECHANICAL DEVICE COMPRISES THE STEPS OF PROVIDING A SUBSTRATE HAVING A FIRST DIELECTRIC LAYER ON TOP SURFACE OF SAID SUBSTRATE, A BOTTOM CONDUCTIVE LAYER ON TOP SURFACE OF SAID FIRST DIELECTRIC LAYER, A SECOND DIELECTRIC LAYER ON SAID BOTTOM CONDUCTIVE LAYER, A 0 SACRIFICIAL LAYER ON SAID SECOND DIELECTRIC LAYER, A THIRD DIELECTRIC LAYER ON SAID SACRIFICIAL LAYER, AND A TOP CONDUCTIVE LAYER ON SAID THIRD DIELECTRIC LAYER, ETCHING A PLURALITY OF HOLES AT SAID TOP CONDUCTIVE LAYER, THEN AT SAID THIRD DIELECTRIC LAYER AND SAID SACRIFICIAL LAYER, AND SEALING 5 SAID ETCHED HOLES OF SAID TOP CONDUCTIVE LAYER AND THIRD DIELECTRIC LAYER BY DEPOSITING A FOURTH DIELECTRIC LAYER ON TOP OF SAID TOP CONDUCTIVE LAYER. MOST ILLUSTRATIVE DIAGRAM:

公开(公告)号：MY155587A

公开(公告)日：2015-11-03

申请号：MYPI2010005685

申请日：2010-11-30

Applicant: MIMOS BERHAD

Inventor： SHENG DANIEL BIEN CHIA ,  SAMAN RAHIMAH MOHD ,  BUYONG MUHAMAD RAMDZAN ,  BADARUDDIN SITI AISHAH MOHAMAD

IPC: H01L21/20

Abstract: THE PRESENT INVENTION RELATES TO A METHOD OF TRANSFERRING SILICON BASED LAYER 101 ONTO POLYMER FILM 103 IN FLEXIBLE POLYMER TYPE DEVICES THAT APPLIES IN THE AREA TAGGING, BIOMEDICAL AND WEARABLE SENSORS AND DEVICES. THE METHOD OF THE PRESENT INVENTION IS COMPATIBLE WITH WAFER FABRICATION OR STANDARD IC PROCESSING. THE TUNGSTEN PLUG PROCESS IS THE CORE ENABLER TO ALLOW SUCCESSFUL TRANSFER OF SILICON STRUCTURES TO THE POLYMER. MOST ILLUSTRATIVE

公开(公告)号：MY146156A

公开(公告)日：2012-06-29

申请号：MYPI20072172

申请日：2007-12-05

Applicant: MIMOS BERHAD

Inventor： BUYONG MUHAMAD RAMDZAN ,  ZAIN AZLINA MOHD ,  SYONO MOHD ISMAHADI ,  WAH LEE HING

IPC: H01L21/08

Abstract: A METHOD OF PACKAGING A MICROMECHANICAL WAFER WITH A DIELECTRIC LAYER (23) OVER SAID MICROMECHANICAL WAFER USING A SPINNING TECHNIQUE. THE DIELECTRIC LAYER (23) IS THEN HEATED (25) TO REMOVE WATER AND CURED (26) THE LAYER OF THE MICROMECHANICAL DEVICE TO PROVIDE A PROTECTIVE COATING TO THE MICROMECHANICAL DEVICE. THE MICROMECHANICAL DEVICE IS THEN FURTHER ENCAPSULATED (30) WITH A PLASTIC MATERIAL.

公开(公告)号：WO2009066997A2

公开(公告)日：2009-05-28

申请号：PCT/MY2008000163

申请日：2008-11-24

Applicant: MIMOS BERHAD ,  BUYONG MUHAMAD RAMDZAN

Inventor： BUYONG MUHAMAD RAMDZAN

IPC: H01L21/3205

CPC classification number: H01L21/76804

Abstract: This invention provides a method to improve metal step coverage in contact hole filling by utilizing two step contact etch. The contact etch process provides a semi-rounded profile on the top half of the contact hole and a straight profile at the lower half. The semi-rounded contact etch process is able to reduce the aspect ratio to 1.

Abstract translation: 本发明提供一种通过利用两步接触蚀刻来改善接触孔填充中的金属台阶覆盖的方法。 接触蚀刻工艺在接触孔的上半部提供半圆形轮廓，并在下半部分提供直线轮廓。 半圆形接触蚀刻工艺能够将纵横比减小到1。

公开(公告)号：WO2009064164A3

公开(公告)日：2009-09-24

申请号：PCT/MY2008000138

申请日：2008-11-14

Applicant: MIMOS BERHAD ,  BUYONG MUHAMAD RAMDZAN

Inventor： BUYONG MUHAMAD RAMDZAN

IPC: A61M5/158 ,  A61M5/31

CPC classification number: A61M37/0015 ,  A61M2037/003 ,  A61M2037/0053

Abstract: This invention relates to a method of fabricating microneedles using dry etching methods on a silicon based material and more particularly a method of fabricating hollow out-of-plane microneedles which are arranged in a single row of at least two microneedles. The fabrication process comprises of multiple steps involving reactive ion etching (RJE) isotropic and deep reactive ion etching (DRIE) anisotropic processes. The process involved only dry etching and the isotropic process step particularly, includes Plasma Etch.

Abstract translation: 本发明涉及一种在硅基材料上使用干法蚀刻方法制造微针的方法，更具体地涉及一种制造布置在至少两个微针的单排中的空心面外微针的方法。 制造过程包括涉及反应离子蚀刻（RJE）各向同性和深反应离子蚀刻（DRIE）各向异性工艺的多个步骤。 该工艺仅涉及干法刻蚀和各向同性工艺步骤，特别包括等离子刻蚀。

公开(公告)号：WO2014007603A3

公开(公告)日：2014-07-24

申请号：PCT/MY2013000122

申请日：2013-07-02

Applicant: MIMOS BERHAD

Inventor： BIEN DANIEL CHIA SHENG ,  TEH AUN SHIH ,  BUYONG MUHAMAD RAMDZAN ,  MOHD ZAIN AZLINA

IPC: G01N27/12

CPC classification number: B82Y15/00 ,  F01N2560/02 ,  G01N27/123 ,  G01N27/127 ,  G01N27/128

Abstract: Method of fabricating a gas sensor with a conductive sensing element on a microhotplate (102) is provided, the method includes the steps of fabricating a microhotplate (102) on silicon, fabricating a nanostructured sensor on the microhotplate (102) by growing of conductive nanotubes (110) or nanowires with metal catalyst and functionalising the conductive nanotubes or nanowires, wherein step the nanotubes (110) or nanowires are functionalised with metal oxides as tin oxide (Sn02), tungsten oxide (WOx), tantalum pent-oxide (Ta205), aluminium oxide (AI203) copper oxide (CuO), iron oxide (Fe203), titanium oxide (TiO), Neodymium Oxide (Nd203) and zinc oxide (ZnO).

Abstract translation: 提供了一种在微电子板（102）上制造具有导电感测元件的气体传感器的方法，该方法包括以下步骤：在硅上制造微孔板（102），通过生长导电纳米管（102），在微孔板（102）上制造纳米结构传感器 （110）或具有金属催化剂的纳米线并对导电纳米管或纳米线进行功能化，其中使用金属氧化物作为氧化锡（SnO 2），氧化钨（WO x），五氧化二钽（Ta2O5））功能化纳米管（110）或纳米线 ，氧化铝（Al 2 O 3）氧化铜（CuO），氧化铁（Fe 2 O 3），氧化钛（TiO），氧化钕（Nd 2 O 3）和氧化锌（ZnO）。

公开(公告)号：WO2009072861A2

公开(公告)日：2009-06-11

申请号：PCT/MY2008000176

申请日：2008-12-05

Applicant: MIMOS BERHAD ,  BUYONG MUHAMAD RAMDZAN

Inventor： BUYONG MUHAMAD RAMDZAN

IPC: H01L21/08 ,  F04B43/02 ,  F04B43/04 ,  H01L21/31

CPC classification number: B81B7/0012 ,  B81C1/00333

Abstract: A method of packaging a micromechanical wafer with a dielectric layer over said micromechanical wafer using a spinning technique. The dielectric layer is then heated to remove water and cured the layer of the micromechanical device to provide a protective coating to the micromechanical device. The micromechanical device is then further encapsulated with a plastic material.

Abstract translation: 一种使用旋转技术将具有介电层的微机械晶片封装在所述微机械晶片上的方法。 然后加热电介质层以去除水并固化微机械装置的层以向微机械装置提供保护涂层。 然后微机械装置进一步用塑料材料封装。