A METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

    公开(公告)号:MY151464A

    公开(公告)日:2014-05-30

    申请号:MYUI2010005859

    申请日:2010-12-09

    Applicant: MIMOS BERHAD

    Abstract: THE PRESENT INVENTION RELATES TO A METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE USING A LIFT-OFF METHOD. THE METHOD COMPRISES THE STEPS OF DEPOSITING AND PATTERNING A SACRIFICIAL LAYER (22) ONTO A SUBSTRATE (21), WHEREIN AT LEAST ONE PORTION OF THE SUBSTRATE SURFACE (21A) IS COVERED BY THE SACRIFICIAL LAYER (22) AND AT LEAST ONE PORTION OF THE SUBSTRATE SURFACE (21B) IS EXPOSED; DEPOSITING AND PATTERNING A CHEMICAL RESIST (23) ONTO THE SACRIFICIAL LAYER (22) AND THE EXPOSED SUBSTRATE SURFACE (21 B); REMOVING THE SACRIFICIAL LAYER (22); DEPOSITING A SEMICONDUCTOR FILM (24) ONTO THE SUBSTRATE (21) AND THE CHEMICAL RESIST (23); AND REMOVING THE CHEMICAL RESIST (23) AND THE SEMICONDUCTOR FILM (24) DEPOSITED ON THE CHEMICAL RESIST (23).

    A REFERENCE ELECTRODE AND A METHOD THEREOF

    公开(公告)号:MY145241A

    公开(公告)日:2012-01-10

    申请号:MYPI20094067

    申请日:2009-09-29

    Applicant: MIMOS BERHAD

    Abstract: A REFERENCE ELECTRODE (130) FOR SENSING PH IS PROVIDED IN AN AMBIENT ELECTROLYTE SOLUTION IN AN ION SENSITIVE FIELD EFFECT TRANSISTOR (ISFET) (100) WHICH INCLUDES A SOURCE (160), A DRAIN (150) AND A GATE (140), CHARACTERIZED IN THAT, THE REFERENCE ELECTRODE (130) INCLUDES AN ALTERNATING CURRENT SOURCE, AN INSULATING MEMBRANE SEPARATING THE REFERENCE ELECTRODE (130) FROM THE AMBIENT ELECTROLYTE SOLUTION, A DIRECT CURRENT (DC) BIASING VOLTAGE (170) AT THE GATE (140) WHEREIN THE VOLTAGE IS A PREDETERMINED CONSTANT VOLTAGE, WHEREIN THE REFERENCE ELECTRODE (130) IS CONNECTABLE TO THE ALTERNATING CURRENT SOURCE (120) WHERE THE REFERENCE ELECTRODE (130) IS FURTHER INCLUDED IN THE GATE (140) AND THE REFERENCE ELECTRODE (130) IS CONSTRUCTED FROM COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) COMPATIBLE METAL.

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