Abstract:
AN ENERGY HARVESTER (100) COMPRISING A BASE (110); ONE OR MORE FIRST RESILIENT MEANS (120) MOUNTED ON THE BASE (110); A HOLLOW CHAMBER (130) HAVING A MOUNTING POINT (131) PIVOTALLY ATTACHED TO THE FIRST RESILIENT MEANS (120) IN STATIC EQUILIBRIUM IN SUCH A WAY THAT CENTRE OF MASS OF THE HOLLOW CHAMBER (130) IS ALIGNED WITH THE FIRST RESILIENT MEANS (120) AT THE VERTICAL AXIS; A HOLLOW MEMBER (140) ENCLOSED WITHIN THE HOLLOW CHAMBER (130) BEING ATTACHED TO ONE OR MORE SECOND RESILIENT MEANS (150) EXTENDING FROM THE MOUNTING POINT (131) IN STATIC EQUILIBRIUM THAT CENTRE OF MASS OF THE HOLLOW MEMBER (140) IS ALIGNED WITH THE SECOND RESILIENT MEANS (150) AT THE VERTICAL AXIS; A PLURALITY OF PIEZOELECTRIC MATERIAL-BUILT CANTILEVERS (160) MOUNTED ON THE HOLLOW MEMBER (140) AND SPACED APART FROM ONE ANOTHER IN A PREDETERMINED GAP AT THE VERTICAL PLANAR THAT THE PIEZOELECTRIC MATERIAL-BUILT CANTILEVERS (160) ARE VARIED IN LENGTH AND/OR CENTRE OF MASS; A PRIMARY STORAGE (170) ASSOCIATED WITH THE HOLLOW CHAMBER (130), THE HOLLOW MEMBER (140) AND THE PLURALITY OF PIEZOELECTRIC MATERIAL- BUILT CANTILEVERS (160) THROUGH AN INTEGRATED CIRCUIT FOR STORING HARVESTED ENERGY; WHEREIN THE ENERGY IS HARVESTED THROUGH VIBRATION OF THE PLURALITY OF PIEZOELECTRIC MATERIAL-BUILT CANTILEVERS (160) AT ITS APPROXIMATELY RESONANT FREQUENCY, RECIPROCATION OF THE HOLLOW CHAMBER (130) AND THE HOLLOW MEMBER (140) UPON APPLYING KINETIC FORCE.
Abstract:
THERE IS DISCLOSED A SURFACE MICROMACHINED (MEMS) GYROSCOPE DEVICE WHERE THE RESONANCE FREQUENCIES ARE CAPABLE OF BEING ADJUSTED AND TUNED FOR OBTAINING MAXIMUM RESPONSE GAIN FOR HIGHER SENSITIVITY. THE MEMS GYROSCOPE COMPRISES OF A SUBSTRATE (1), A PROOF-MASS (2), A CAPACITIVE AREA-CHANGED PLATE (3), A DRIVING MODE ELECTRODE (4) AND A SENSING MODE ELECTRODE (5). THE PROOF-MASS (2) IS STRUCTURED AS A CROSS-SHAPED BODY THAT INCLUDES THE SENSING MODE AND DRIVING MODE ELECTRODES (4, 5) WHERE THE PROOF-MASS IS ADAPTED TO OSCILLATE BACK AND FORTH LATERALLY IS OVER THE CAPACITIVE AREA-CHANGED PLATE (3) DEFINING AN AREA-CHANGED CAPACITIVE TYPE MEMS GYROSCOPE. THE DRIVING AND SENSING MODE ELECTRODES (4, 5) ARE SHAPED AS A SYMMETRICAL BRANCH-FINGER STRUCTURE. THE PROOF- MASS IS CONNECTED TO THE SUBSTRATE (1) THROUGH A SPRING (6) AND THE BRANCH-FINGER STRUCTURE IS PROVIDED HAVING TWO DIFFERENT GAP SIDE-BY-SIDE AND NARROW-WIDE NARROW GAP SERIES CONFIGURATION, WHEREBY THE SPRING IS CONFIGURED AS A CIRCULAR-SHAPED, RECTANGULAR-SHAPED OR VARIATIONS OF THE SAME. THE SPRING CONSTANT (KX, KY) IS CONTROLLABLE AND ADJUSTABLE THROUGH THE APPLICATION OF VOLTAGE ON THE BRANCH FINGER ACTING AS ACTUATOR AND PSEUDO SPRING THUS PROVIDING TUNED RESONANT FREQUENCY FOR HIGHER SENSITIVITY.
Abstract:
The present invention relates to a humidity sensor device. The humidity sensor device (100) comprises of at least two contact pads (110), a sensing capacitor (120), a reference capacitor (130), and a control circuit (140). The sensing capacitor (120) is an interdigital capacitor and it is divided into at least two sub-capacitors (120a, 120b, 120c, 120n). The control unit (140) determines the number of sub capacitors (120a, 120b, 120c, 120n) to be connected to the contact pads (110) by measuring the capacitance value of the reference capacitor (130) and controlling the switches (124) of the sensing capacitor (120) based on the variation in sensing material thickness of the reference capacitor (130). The most illustrative drawing:
Abstract:
THERE IS DISCLOSED A METHOD OF FABRICATING RADIO FREQUENCY SURFACE MICROELECTROMECHANICAL (MEMS) SWITCH. THE METHOD UTILIZES FOUR MASKS, EACH CONFIGURED THROUGH PHOTOLITHOGRAPHY PROCESS AT DIFFERENT STAGES THAT RESULTED IN SUBSTANTIALLY PLANAR SILICON DIOXIDE, CRITICAL IN PROVIDING BETTER MECHANICAL PERFORMANCE OF THE RF MEMS SWITCH. THE STEPS INCLUDE, AMONG OTHERS, DEPOSITING SILICON ON GLASS LIQUID TO FILL SMALL HOLES FOR A SMOOTH SILICON OXIDE SURFACE, EMPLOYING BACK ETCH PROCESS AND PERFORMING WET ETCHING BY USING CHEMICAL SOLUTION CALLED PAD ETCH. AN RF MEMS SWITCH THAT COMPRISE OF A LOWER ELECTRODE (30) FORMED ON THE SURFACE OF A SILICON SUBSTRATE (31), AN ALUMINUM MEMBRANE (32) SUSPENDED OVER THE ELECTRODE AND A DIELECTRIC LAYER (33) COVERING THE LOWER ELECTRODE FABRICATED THROUGH THE PROCESS IS ALSO DISCLOSED.
Abstract:
THE PRESENT INVENTION RELATES TO CAPACITIVE SENSORS FOR MEASURING HUMIDITY AND MOISTURE AND TO AN IMPROVED PROCESS FOR MAKING THE SAME. THE FABRICATION PROCESS FOR A CAPACITIVE SENSOR HAVING A MULTI-LAYER ELECTRODES FOR MEASURING HUMIDITY AND MOISTURE COMPRISING DISPOSING THE MULTI-LAYER INTERDIGITATED ELECTRODES (2, 9) IN A MULTI-LAYER POLYIMIDES (5, 6, 7); PROVIDING A PLURALITY OF TRENCHES (12) ON THE SURFACE OF THE ELECTRODE BY LIFT OFF PROCESS; AND COVERING THE SENSOR WITH PHOTOSENSITIVE NEGATIVE POLYIMIDE.
Abstract:
VIBRATORY SENSOR 5 A CAPACITOR COMPRISES A DIELECTRIC BASE LAYER (4A) DEFINED BY TOP, FIRST AND SIDE SURFACES; A PLURALITY OF FIRST DRIVEN ELECTRODE (I 5) HAVING TIPS AND EDGES DEPOSITED ON THE TOP SURFACE OF THE DIELECTRIC BASE LAYER (4A) THAT EACH ARE SPACED APART AT THE EDGES BY A PREDETENNINED GAP; A PLURALITY OF FIRST SENSING ELECTRODE (16) HAVING TIPS AND EDGES THAT EACH OF THE FIRST SENSING ELECTRODE (16) IS DEPOSITED AT EACH OF THE 10 PREDETEN-NINED GAP IN BETWEEN TWO FIRST DRIVEN ELECTRODES (15) WITH A PREDETERMINED DISTANCE IN BETWEEN THE FIRST SENSING (16) AND FIRST DRIVEN ELECTRODES (15); A PLURALITY PAIR OF PROTRUSION (20) EXTENDS UPWARD FROM THE TOP SURFACE OF THE DIELECTRIC BASE LAYER (4A) AT THE TIPS OF THE FIRST DRIVEN ELECTRODES (I 5) AND THE FIRST SENSING ELECTRODES (I 6); A SECOND DRIVEN ELECTRODE (IO) OR A SECOND SENSING ELECTRODE (II) ARE POSITIONED 1 5 OVERHEAD OF EACH FIRST DRIVEN ELECTRODE (15) AND FIRST SENSING ELECTRODE (16) RESPECTIVELY BY ANCHORING ONTO THE CORRESPONDING PAIR OF PROTRUSIONS (20) WITH A VOID LEFT BETWEEN EACH SECOND AND FIRST ELECTRODES.- WHEREBY THE SECOND DRIVEN (10) AND SECOND SENSING (I 1) ELECTRODES VIBRATE UP AND DOWN BY APPLYING A BIAS VOLTAGE ONTO THE FIRST DRIVEN (I 5) AND FIRST SENSING (I 6) ELECTRODES THUS ABLE TO MANIPULATE 20 PENETRATION DEPTH OF QUASI-STATIC ELECTRIC FIELD LINES PRODUCED FROM THE SECOND DRIVEN (I 0) AND SECOND SENSING ELECTRODES (I 1) INTO A MATERIAL UNDER TEST. (MOST ILLUSTRATED BY
Abstract:
There is disclosed a method of fabricating radio frequency surface microelectromechanical (MEMS) switch. The method utilizes four masks, each configured through photolithography process at different stages that resulted in substantially planar silicon dioxide, critical in providing better mechanical performance of the RF MEMS switch. The steps include, among others, depositing silicon on glass liquid to fill small holes for a smooth silicon oxide surface, employing back etch process and performing wet etching by using chemical solution called Pad Etch. An RF MEMS switch that comprise of a lower electrode (30) formed on the surface of a silicon substrate (31), an aluminum membrane (32) suspended over the electrode and a dielectric layer (33) covering the lower electrode fabricated through the process is also disclosed.