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    Semiconductor structure including a partially annealed layer
    1.
    发明专利
    Semiconductor structure including a partially annealed layer 未知

    公开(公告)号：AU8885001A

    公开(公告)日：2002-04-15

    申请号：AU8885001

    申请日：2001-09-07

    Applicant: MOTOROLA INC

    Inventor： EISENBEISER KURT ,  FOLEY BARBARA M ,  FINDER JEFFREY M ,  THOMPSON DANNY L

    IPC: H01L21/20 ,  H01L21/203 ,  H01L21/205

    Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. To further relieve strain in the accommodating buffer layer, at least a portion of the accommodating buffer layer is exposed to a laser anneal process to cause the accommodating buffer layer to become amorphous, providing a true compliant substrate for subsequent layer growth.

    Apparatus and method for measuring selected physical condition of an animate subject
    6.
    发明专利
    Apparatus and method for measuring selected physical condition of an animate subject 未知

    公开(公告)号：AU6809401A

    公开(公告)日：2002-01-14

    申请号：AU6809401

    申请日：2001-05-24

    Applicant: MOTOROLA INC

    Inventor： FOLEY BARBARA M ,  GRUBE GARY W

    IPC: A61B5/00 ,  H01L21/20 ,  H01L31/12

    Abstract: An apparatus for measuring at least one selected physical condition of an animate subject is disclosed. The apparatus comprises: (a) a light source; (b) a light receiver that receives resultant light from the light source via the subject; and (c) an information processor connected with the light receiver. The processor receives indication of the resultant light from the light receiver and evaluates the indication to effect the measuring. The processor is implemented in a unitary structure with the light source and light detector that is borne upon a single silicon substrate. The apparatus may further comprise a first interface element coupled with the processor to facilitate communication with the light receiver, and a second interface element coupled with the processor that includes communication means for conveying messages to remote loci. The first and second interface elements are implemented in the unitary structure. The method of the present invention comprises the steps of: (a) providing an apparatus implemented in a unitary structure borne upon a single silicon substrate; and (b) evaluating the indication provided by the apparatus to effect the measuring. The unitary structure is comprised of a monolithic structure having a first portion implemented in silicon, and having a second portion implemented in at least one compound semiconductor material.

    OSCILLATING REFERENCE SIGNAL GENERATOR
    8.
    发明申请
    OSCILLATING REFERENCE SIGNAL GENERATOR 审中-公开
    振荡参考信号发生器

    公开(公告)号：WO02099482A3

    公开(公告)日：2003-03-13

    申请号：PCT/US0150688

    申请日：2001-12-27

    Applicant: MOTOROLA INC

    Inventor： CRAIG RONALD A ,  IRWIN JAMES S ,  FOLEY BARBARA M

    IPC: H01L21/20 ,  H01L21/8258 ,  H01L27/06 ,  H01L27/15 ,  H01S5/026 ,  H01S5/042 ,  H03B17/00

    CPC classification number: H03B17/00 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/15 ,  H01S5/0261 ,  H01S5/0427

    Abstract: An apparatus for generating an oscillating reference signal at a reference frequency includes: (a) a light conveying element (4214) having a first end and a second end; the light conveying element (4214) conveying substantially all light received or reflected at one end to the other end; the light conveying element (4214) having a light transmission path intermediate the first end and the second end; the transmission path being related to the reference frequency; (b) a light transmitting element (4216) oriented to introduce light into the light conveying element (4214) at one end of the light conveying element; and (c) a light receiving element (4218) oriented to receive the transmitted light at one end of the light conveying element. The light conveying element (4216), the light transmitting element and the light receiving element (4218) are implemented in a monolithic structure arranged on a single substrate (4212).

    Abstract translation: 用于产生参考频率的振荡参考信号的装置包括：（a）具有第一端和第二端的光传输元件（4214）; 所述光输送元件（4214）基本上将在一端接收或反射的所有光传送到另一端; 光输送元件（4214）具有在第一端和第二端之间的光传输路径; 所述传输路径与所述参考频率相关; （b）定向成将光引入光传输元件（4214）的光传输元件（4216）的光传输元件的一端; 和（c）定向为在光输送元件的一端处接收透射光的光接收元件（4218）。 光输送元件（4216），透光元件和光接收元件（4218）以布置在单个基板（4212）上的整体结构来实现。

    Oscillating reference signal generator
    9.
    发明专利
    Oscillating reference signal generator 未知

    公开(公告)号：AU2002249879A1

    公开(公告)日：2002-12-16

    申请号：AU2002249879

    申请日：2001-12-27

    Applicant: MOTOROLA INC

    Inventor： FOLEY BARBARA M ,  CRAIG RONALD A ,  IRWIN JAMES S

    IPC: H01L21/20 ,  H01L21/8258 ,  H01L27/06 ,  H01L27/15 ,  H01S5/026 ,  H01S5/042 ,  H03B17/00

    Abstract: An apparatus for generating an oscillating reference signal at a reference frequency includes: (a) a light conveying element having a first end and a second end; the light conveying element conveying substantially all light received or reflected at one end to the other end; the light conveying element having a light transmission path intermediate the first end and the second end; the transmission path being related to the reference frequency; (b) a light transmitting element oriented to introduce light into the light conveying element at one end of the light conveying element; and (c) a light receiving element oriented to receive the transmitted light at one end of the light conveying element. The light conveying element, the light transmitting element and the light receiving element are implemented in a monolithic structure arranged on a single substrate.

    Integrated semiconductor devices for interacting with magnetic storage media
    10.
    发明专利
    Integrated semiconductor devices for interacting with magnetic storage media 未知

    公开(公告)号：AU2002239714A1

    公开(公告)日：2002-12-16

    申请号：AU2002239714

    申请日：2001-12-27

    Applicant: MOTOROLA INC

    Inventor： RABE DUANE C ,  JOHNSON TIMOTHY JOE ,  TRAYLOR KEVIN B ,  FOLEY BARBARA M

    IPC: G11B5/10 ,  G11B5/31 ,  G11B5/48 ,  G11B11/105 ,  G11B33/12 ,  H01L21/20

    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. A device structure for interacting with magnetic storage media is formed overlying the monocrystalline substrate. Portions or an entirety of the device structure can also overly the accomodating buffer layer, or the monocrystalline material layer.

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