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1.发明专利Surface emitting semiconductor laser device and optical projection device comprising the same 有权表面发射半导体激光器件和包含其的光学投影器件
公开(公告)号：JP2007103943A
公开(公告)日：2007-04-19
申请号：JP2006271282
申请日：2006-10-02
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： LUTGEN STEPHAN
IPC: H01S5/183
CPC classification number: H01S5/183 , H01S3/109 , H01S5/0213 , H01S5/024 , H01S5/041 , H01S5/141 , H01S5/142 , H01S2301/18
Abstract: PROBLEM TO BE SOLVED: To provide a surface emitting semiconductor laser device having remarkably stable laser radiation over time. SOLUTION: The surface emitting semiconductor laser device has a resonator, a semiconductor body having an array of layers prepared for the generation of radiation, a transparent thermal conduction element with frequency selectivity brought into heat-contact with the radiation passage face of the semiconductor body, and an optical band path filter suitable for suppressing a resonance mode which can be previously set. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 要解决的问题：提供一种具有显着稳定的激光辐射随时间推移的表面发射半导体激光器件。 解决方案：表面发射半导体激光器件具有谐振器，具有准备用于产生辐射的层的阵列的半导体本体，具有频率选择性的透明导热元件与该辐射通道面的热接触热接触 半导体本体和适于抑制可以预先设定的谐振模式的光学带路滤波器。 版权所有（C）2007，JPO＆INPIT
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公开(公告)号：JP2004253800A
公开(公告)日：2004-09-09
申请号：JP2004040268
申请日：2004-02-17
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： LUTGEN STEPHAN , BRICK PETER
IPC: H01S3/06 , H01S3/08 , H01S3/081 , H01S3/082 , H01S3/091 , H01S3/094 , H01S3/098 , H01S3/10 , H01S5/04 , H01S5/065 , H01S5/14 , H01S5/183
CPC classification number: H01S3/1118 , H01S3/0604 , H01S3/08004 , H01S3/0809 , H01S3/0811 , H01S3/0816 , H01S3/094 , H01S3/1112 , H01S5/026 , H01S5/041 , H01S5/0657 , H01S5/141 , H01S5/183 , H01S5/4056 , H01S2301/08
Abstract: PROBLEM TO BE SOLVED: To provide a laser apparatus for forming a laser pulse whose pulse duration is in the range of a picosecond or femtosecond.
SOLUTION: At least one mode coupler is arranged in the external resonator of the laser apparatus. The mode coupler is arranged as an external mode coupler outside the semiconductor laser, and/or incorporated as an internal mode coupler inside the semiconductor body. Further, it would be advantageous if this takes a two-stage structure that combines, for example, an external mode coupler for initiating mode coupling and an internal mode coupler for reducing a pulse width or stabilizing mode coupling. In a semiconductor laser that is optically pumped by an external resonator, the length of the resonator can be freely selected to advantage from a wide range of choice, thus giving sufficient spatial room to the external mode coupler. The length of the resonator is more advantageously selected within the amplification bandwidth such that a sufficient number of resonator modes are generated for the mode coupling operation.
COPYRIGHT: (C)2004,JPO&NCIPI-
公开(公告)号：JP2004207724A
公开(公告)日：2004-07-22
申请号：JP2003421217
申请日：2003-12-18
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： BRICK PETER , LUTGEN STEPHAN , LINDER NORBERT
Abstract: PROBLEM TO BE SOLVED: To provide laser that can perform an efficient pumping mechanism with only a slight loss.
SOLUTION: The wavelength λ
p and the incident angle α
p of pumping light are specified so that the pumping light may be absorbed primarily inside a quantum well.
COPYRIGHT: (C)2004,JPO&NCIPIAbstract translation: 要解决的问题：提供只能轻微损耗的能够执行有效泵送机构的激光器。 解决方案：指定泵浦光的波长λ
p 和入射角α p ，使得泵浦光主要被吸收在量子阱内。 版权所有（C）2004，JPO＆NCIPI -
公开(公告)号：JP2007165880A
公开(公告)日：2007-06-28
申请号：JP2006329305
申请日：2006-12-06
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： BRICK PETER , LUTGEN STEPHAN
CPC classification number: H01S5/041 , B82Y20/00 , H01S5/024 , H01S5/14 , H01S5/18383 , H01S5/3415 , H01S5/34306 , H01S5/34313 , H01S5/34373
Abstract: PROBLEM TO BE SOLVED: To improve the light pumping efficiency of a vertical radiation semiconductor laser having an external resonator, a semiconductor substrate, and a Bragg reflector.
SOLUTION: A vertical radiation semiconductor laser is constituted, which is characterized by having an external resonator (7) and a semiconductor substrate (1) and in that the semiconductor substrate has a quantum layer structure (2) including a plurality of quantum layers (3) and barrier layers (4) between the quantum layers as an active zone also has a Bragg reflector (5) on one surface of the quantum layer structure (2), and a pumping beam source (9) for projecting pumping beams (10) into the quantum layer structure (2) is provided, wherein the Bragg reflector (5) includes a plurality of layers while the layers are arranged non-periodically so that the absorption of the pumping beams (10) is carried out substantially in the quantum layer structure (2).
COPYRIGHT: (C)2007,JPO&INPITAbstract translation: 要解决的问题：提高具有外部谐振器，半导体衬底和布拉格反射器的垂直辐射半导体激光器的光泵浦效率。 解决方案：构成垂直辐射半导体激光器，其特征在于具有外部谐振器（7）和半导体衬底（1），并且半导体衬底具有包括多个量子的量子层结构（2） 作为有源区的量子层之间的层（3）和势垒层（4）也在量子层结构（2）的一个表面上具有布拉格反射器（5），以及用于将泵浦光束 （10）进入量子层结构（2），其中布拉格反射器（5）包括多个层，而这些层被非周期性地布置，使得泵浦光束（10）的吸收基本上在 量子层结构（2）。 版权所有（C）2007，JPO＆INPIT
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公开(公告)号：JP2004349711A
公开(公告)日：2004-12-09
申请号：JP2004153578
申请日：2004-05-24
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： LUTGEN STEPHAN
CPC classification number: B82Y20/00 , H01S3/109 , H01S5/024 , H01S5/041 , H01S5/141 , H01S5/18383 , H01S5/34313 , H01S5/34326
Abstract: PROBLEM TO BE SOLVED: To provide an optical pumping semiconductor device whose efficiency of pumping is improved and each of quantum wells is efficiently pumped. SOLUTION: A semiconductor substrate has a structure of quantum well radiating in the vertical direction in order to form a vertical beam field, the structure of quantum well includes a number of quantum layers, and depletion layers are located between the quantum layers, and the quantum layers are provided for photopumping using a pump beam field. The semiconductor device has a mirror layer positioned on the semiconductor substrate, the structure of quantum well is located in a vertical resonator for the pump beam field. COPYRIGHT: (C)2005,JPO&NCIPI
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Patent Agency Ranking
公开(公告)号：JP2015092636A
公开(公告)日：2015-05-14
申请号：JP2015025476
申请日：2015-02-12
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： ADRIAN STEFAN AVRAMESCU , DESIREE QUEREN , EICHLER CHRISTOPH , SABATHIL MATTHIAS , LUTGEN STEPHAN , STRAUS UWE
IPC: H01S5/343
Abstract: 【課題】動作中に高い効率で光を生成する、量子井戸構造を含むオプトエレクトロニクス半導体チップを実現する。【解決手段】オプトエレクトロニクス半導体チップの少なくとも1つの実施形態では、該オプトエレクトロニクス半導体チップ(1)は窒化物材料系をベースとし、少なくとも1つの活性量子井戸(2)を含む。前記少なくとも1つの活性量子井戸(2)は、動作中に電磁波を生成するように形成されている。さらに、前記少なくとも1つの活性量子井戸(2)は、半導体チップ(1)の成長方向zに対して平行な方向にN個の相互に重なったゾーン(A)を含む。ここで、Nは2以上の自然数である。前記活性量子井戸(2)のゾーン(A)のうち少なくとも2つのゾーンの各平均インジウム含有率cは相互に異なる。【選択図】図1
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7.发明专利Surface mission laser device provided with perpendicular emitter that can be optically pumped 有权表面任务激光器件可提供可以被光学抽出的发光二极管
公开(公告)号：JP2003304033A
公开(公告)日：2003-10-24
申请号：JP2003091016
申请日：2003-03-28
Inventor： SPAETH WERNER DR , LUFT JOHANN , LUTGEN STEPHAN , LINDER NORBERT , ALBRECHT TONY , STEEGMUELLER ULRICH
CPC classification number: H01S5/141 , H01S5/026 , H01S5/041 , H01S5/06226 , H01S5/1032 , H01S5/1071 , H01S5/18305 , H01S5/1835 , H01S5/4056
Abstract: PROBLEM TO BE SOLVED: To improve a semiconductor laser device to modulate an output power at a high speed.
SOLUTION: A surface emission semiconductor laser device is provided with a perpendicular emitter (20) that can be optically pumped, which is provided with at least one modulation beam source (30) to modulate an output power of the surface emission semiconductor laser device that is a type having a beam formation layer (14). The modulation beam source includes an edge radiation semiconductor structure (15) having an active layer forming a beam, and the modulation beam source is arranged to radiate a beam from the semiconductor laser device during operation. The generated beam is inputted in the active layer (14) for forming the beam of the perpendicular emitter (20) and is joined with it.
COPYRIGHT: (C)2004,JPOAbstract translation: 要解决的问题：提高半导体激光装置以高速调制输出功率。 解决方案：表面发射半导体激光器件设置有可被光学泵浦的垂直发射器（20），其设有至少一个调制束源（30），以调制表面发射半导体激光器的输出功率 装置，其是具有光束形成层（14）的类型。 调制光束源包括具有形成光束的有源层的边缘辐射半导体结构（15），并且调制光束源被布置成在操作期间辐射来自半导体激光器件的光束。 所产生的光束被输入到有源层（14）中，用于形成垂直发射器（20）的光束并与之连接。 版权所有（C）2004，JPO
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公开(公告)号：DE10219345B4
公开(公告)日：2011-05-19
申请号：DE10219345
申请日：2002-04-30
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： LUTGEN STEPHAN , ORTH ANDREAS
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公开(公告)号：DE102009015569A1
公开(公告)日：2010-10-07
申请号：DE102009015569
申请日：2009-03-30
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： AVRAMESCU ADRIAN STEFAN , QUEREN DESIREE , EICHLER CHRISTOPH , SABATHIL MATTHIAS , LUTGEN STEPHAN , STRAUS UWE
IPC: H01L33/00 , H01L29/15 , H01L29/205
Abstract: In mindestens einer Ausführungsform des optoelektronischen Halbleiterchips (1) basiert dieser auf einem Nitrid-Materialsystem und umfasst mindestens einen aktiven Quantentrog (2). Der mindestens eine aktive Quantentrog (2) ist dazu eingerichtet, im Betrieb eine elektromagnetische Strahlung zu erzeugen. Weiterhin weist der mindestens eine aktive Quantentrog (2) in einer Richtung parallel zu einer Wachstumsrichtung z des Halbleiterchips (1) N aufeinanderfolgende Zonen (A) auf, wobei N eine natürliche Zahl größer oder gleich 2 ist. Zumindest zwei der Zonen (A) des aktiven Quantentrogs (2) weisen einen voneinander verschiedenen mittleren Indiumgehalt c auf. Weiterhin erfüllt der mindestens eine aktive Quantentrog (2) die Bedingung: $I1.
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公开(公告)号：DE502004008051D1
公开(公告)日：2008-10-23
申请号：DE502004008051
申请日：2004-11-09
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： SCHMID WOLFGANG , BRICK PETER , LUTGEN STEPHAN , ALBRECHT TONY , EBERHARD FRANZ
IPC: H01S5/183 , H01H13/02 , H01H13/14 , H01H13/70 , H01H13/705 , H01H13/86 , H01S5/026 , H01S5/04 , H01S5/10 , H01S5/40
Abstract: An optically pumped semiconductor laser device having a surface-emitting vertical emission region ( 1 ) and at least one monolithically integrated pump radiation source ( 2 ) for optically pumping the vertical emission region ( 1 ). The semiconductor laser device is distinguished by the fact that the pump radiation enters the vertical emission region ( 1 ) in the form of partial bundles of rays of radiation with different radiation directions so that the pump radiation and the fundamental mode of the vertical emission region ( 1 ) have an overlap which is suitable for the excitation of this fundamental mode. This device is based on the fact that the fundamental mode of the vertical emission region ( 1 ) is preferably excited when the spatial intensity distribution of the pump radiation matches the profile of the fundamental mode.
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