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    Semiconductor substrate for radiation reception
    1.
    发明专利
    Semiconductor substrate for radiation reception 有权
    用于辐射接收的半导体基板

    公开(公告)号：JP2005057273A

    公开(公告)日：2005-03-03

    申请号：JP2004220797

    申请日：2004-07-28

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： ALBRECHT TONY ,  BRICK PETER ,  PLAINE GLENN-YVES ,  PHILIPPENS MARC

    IPC: H01L31/02 ,  H01L31/00

    CPC classification number: H01L31/02162 ,  H01L31/0547 ,  Y02E10/52

    Abstract: PROBLEM TO BE SOLVED: To form a semiconductor element for radiation reception such that protection against obstacle or error of a signal to be detected is further improved, and production does not need much cost technically. SOLUTION: The semiconductor substrate for radiation reception has a radiation-absorbing active-area 2, and receives electromagnetic radiation within a wavelength range between λ 1 and λ 2 , wherein λ 2 is larger than λ 1 . A filter layer 5 is provided between the active area 2 and a radiation-input coupling face 9. The active area 2 detects electromagnetic radiation having a shorter wavelength than λ 2 . A filter layer 5 absorbs electromagnetic radiation having a shorter wavelength than λ 1 , and transmits electromagnetic radiation having a longer wavelength than λ 1 . COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：为了形成用于辐射接收的半导体元件，进一步提高防止信号障碍物或误差的保护，并且技术上不需要太多的成本。 解决方案：用于辐射接收的半导体衬底具有辐射吸收有源区域2，并且在λ 1 和λ 2 之间的波长范围内接收电磁辐射， 其中λ 2 大于λ 1 。 在有源区域2和辐射输入耦合面9之间设置滤光层5.有源区域2检测波长比λ 2 更短的电磁辐射。 过滤层5吸收波长比λ<1> SB>更短波长的电磁辐射，并且发射波长比λ 1 更长的电磁辐射。 版权所有（C）2005，JPO＆NCIPI

    5.
    发明专利
    未知

    公开(公告)号：DE102007046519A1

    公开(公告)日：2009-04-02

    申请号：DE102007046519

    申请日：2007-09-28

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： HAHN BERTHOLD ,  WEIMAR ANDREAS ,  BAUR JOHANNES ,  SABATHIL MATTHIAS ,  PLAINE GLENN-YVES

    IPC: H01L33/10 ,  H01L33/14 ,  H01L33/38 ,  H01L33/40

    Abstract: A thin-film LED comprising a barrier layer (3), a first mirror layer (2) succeeding the barrier layer (3), a layer stack (5) succeeding the first mirror layer (2), and at least one contact structure (6) succeeding the layer stack (5). The layer stack (5) has at least one active layer (5a) which emits electromagnetic radiation. The contact structure (6) is arranged on a radiation exit area (4) and has a contact area (7). The first mirror layer (2) has, in a region lying opposite the contact area of the contact structure (6), a cutout which is larger than the contact area (7) of the contact structure (6). The efficiency of the thin-film LED is increased as a result.

    7.
    发明专利
    未知

    公开(公告)号：DE10313609B4

    公开(公告)日：2005-07-14

    申请号：DE10313609

    申请日：2003-03-26

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： PHILIPPENS MARC ,  PLAINE GLENN-YVES ,  ALBRECHT TONY ,  BRICK PETER

    IPC: H01S5/06 ,  H01S5/10 ,  H01S5/18 ,  H01S5/183 ,  H01S5/187

    Abstract: A semiconductor laser, contains at least one absorbing layer ( 8 ) in its laser resonator, said absorbing layer reducing the transmission T Res of the laser radiation ( 10 ) in the laser resonator for the purpose of decreasing the sensitivity of the semiconductor laser to disturbances created by radiation ( 9 ) fed back into the laser resonator. This reduces fluctuations in the output power due to fed-back radiation ( 9 ).

    9.
    发明专利
    未知

    公开(公告)号：DE10313609A1

    公开(公告)日：2004-10-14

    申请号：DE10313609

    申请日：2003-03-26

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： PHILIPPENS MARC ,  PLAINE GLENN-YVES ,  ALBRECHT TONY ,  BRICK PETER

    IPC: H01S5/06 ,  H01S5/10 ,  H01S5/18 ,  H01S5/183 ,  H01S5/187

    Abstract: A semiconductor laser, contains at least one absorbing layer ( 8 ) in its laser resonator, said absorbing layer reducing the transmission T Res of the laser radiation ( 10 ) in the laser resonator for the purpose of decreasing the sensitivity of the semiconductor laser to disturbances created by radiation ( 9 ) fed back into the laser resonator. This reduces fluctuations in the output power due to fed-back radiation ( 9 ).

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