公开(公告)号：JP2010187033A

公开(公告)日：2010-08-26

申请号：JP2010125863

申请日：2010-06-01

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： BAUR JOHANNES ,  EISERT DOMINIK ,  FEHRER MICHAEL ,  HAHN BERTHOLD ,  HAERLE VOLKER DR

IPC: H01L33/20 ,  H01L33/32

CPC classification number: H01L33/20

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-emitting semiconductor component which can be produced from a wafer with a better area yield and is suitable to high optical output, and a method for the production thereof. SOLUTION: The radiation-emitting semiconductor component has a radiation-transmissive substrate, on the underside of which a radiation-generating layer is arranged, in which the substrate has inclined side surfaces, in which the refractive index of the substrate is greater than the refractive index of the radiation-generating layer, in which the difference in refractive index results in an unilluminated substrate region, into which no photons are coupled directly from the radiation-generating layer, and in which the substrate has essentially perpendicular side surfaces in the unilluminated region. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种可以从具有更好的面积产率的晶片生产并适用于高光输出的辐射发射半导体组件及其制造方法。 解决方案：辐射发射半导体部件具有辐射透射性基板，其下侧布置有辐射发生层，其中基板具有倾斜侧表面，其中基板的折射率较大 比其中折射率差导致没有光子直接从辐射产生层耦合的未照射衬底区域的辐射产生层的折射率，并且其中衬底具有基本垂直的侧表面 未发光区域。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2007073998A

公开(公告)日：2007-03-22

申请号：JP2006337515

申请日：2006-12-14

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： BAUR JOHANNES ,  EISERT DOMINIK ,  FEHRER MICHAEL ,  HAHN BERTHOLD ,  HAERLE VOLKER DR ,  JACOB ULRICH ,  PLASS WERNER ,  STRAUS UWE ,  VOELKL JOHANNES ,  ZEHNDER ULRICH

IPC: H01L33/20 ,  H01L33/24

CPC classification number: H01L33/20 ,  H01L33/24 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor chip suitable for high radiation output so that output efficiency of radiation generated in the semiconductor chip is improved.
SOLUTION: At least one vertical surface of a semiconductor chip, which is used as an output surface, is longer than a lateral surface in an extending direction of an active zone.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供适合于高辐射输出的半导体芯片，从而提高在半导体芯片中产生的辐射的输出效率。 解决方案：用作输出表面的半导体芯片的至少一个垂直表面比活动区域的延伸方向上的侧表面长。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2004260178A

公开(公告)日：2004-09-16

申请号：JP2004046959

申请日：2004-02-23

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： STEIN WILHELM ,  FEHRER MICHAEL ,  BAUR JOHANNES ,  WINTER MATTHIAS ,  PLOESSL ANDREAS ,  KAISER STEPHAN ,  HAHN BERTHOLD ,  EBERHARD FRANZ

IPC: H01L33/32 ,  H01L33/40 ,  H01L33/00

CPC classification number: H01L33/40 ,  H01L33/32

Abstract: PROBLEM TO BE SOLVED: To provide an enhanced electric contact in a high reflection factor, excellent ohmic contact to a semiconductor, each other's excellent adhesion between layers which form excellent adhesion and contact on the semiconductor, good thermal stability, high stability to the environmental-impact factor, and soldering possibility and structuring possibility. SOLUTION: This electric contact of the photoelectron semiconductor chip 1 comprises a mirror layer 2 made of metal or metal alloy, a protective layer 3 for reducing the corrosion of the mirror layer 2, a barrier layer 4, an adhesion intermediate layer 5, and a solder layer 8. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2003086838A

公开(公告)日：2003-03-20

申请号：JP2002236672

申请日：2002-08-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： EISERT DOMINIK ,  STRAUS UWE ,  BAUR JOHANNES

IPC: H01L33/20 ,  H01L33/38 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide an light emitting device with its light emitting efficiency further improved. SOLUTION: A window is equipped with a side face having a 1st partial area vertical to a primary surface and a 2nd partial area oblique to the same. The 1st area forms an edge together with the primary surface and is away from the primary surface by a distance d changing gradually into the 2nd area, and the boundary of the radially formed plane in its lateral direction is positioned with a distance l from the edge formed by the 1st area and the primary surface. In this context, l>=d/tanβ, wherein β=arccos (n1 /n2 ), wherein n1 is the refraction factor of the multilayer structure, n2 is the refraction factor of the window, and n1

公开(公告)号：JP2003234505A

公开(公告)日：2003-08-22

申请号：JP2003020946

申请日：2003-01-29

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BRUDERL GEORG ,  BAUR JOHANNES

IPC: H01L21/20 ,  H01L33/00 ,  H01L33/38

Abstract: PROBLEM TO BE SOLVED: To develop a semiconductor device that is equipped with a transition section having an electric series resistance as small as possible between a semiconductor body and a substrate. SOLUTION: In the semiconductor device, a conductive substrate (1) and a semiconductor body (3) are provided, and the semiconductor body (3) has at least one nitride-compound semiconductor and at the same time is arranged on the surface of the substrate (1). In this case, a conductive mask layer (2) having a specific mask structure for reducing the series resistance in the semiconductor device is arranged between the substrate (1) and the semiconductor body (3), and the surface of the substrate (1) is partially covered with the mask layer. COPYRIGHT: (C)2003,JPO

公开(公告)号：WO2009015645A3

公开(公告)日：2009-04-23

申请号：PCT/DE2008001225

申请日：2008-07-24

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  AHLSTEDT MAGNUS ,  BADER STEFAN ,  BAUR JOHANNES ,  SABATHIL MATTHIAS ,  STRASSBURG MARTIN ,  ZEHNDER ULRICH

Inventor： AHLSTEDT MAGNUS ,  BADER STEFAN ,  BAUR JOHANNES ,  SABATHIL MATTHIAS ,  STRASSBURG MARTIN ,  ZEHNDER ULRICH

IPC: H01L33/02 ,  H01L33/04 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46

CPC classification number: H01L33/02 ,  H01L33/04 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46

Abstract: Optoelectronic component (20) having a layer stack (10), comprising at least the following: a layer sequence constituting a semiconductor light emitting diode (5) and comprising at least a first light emitting diode layer (2), a second light emitting diode layer (4) and an optically active zone (3) between the first (2) and the second light emitting diode layer (4), wherein the two light emitting diode layers (2, 4) are in each case formed from a III-V semiconductor material containing in each case at least one of the elements aluminium, gallium and indium and in each case at least one of the elements nitrogen, phosphorus and arsenic, and wherein the first light emitting diode layer (2) is an n-doped layer and the second light emitting diode layer (4) is a p-doped layer, a silver-containing metallic layer (9) and an interlayer (8) composed of a transparent conductive oxide, which is arranged between the semiconductor light emitting diode (15) and the metallic layer (9), characterized in that the metallic layer (9) and the interlayer (8) are arranged on that side of the semiconductor light emitting diode (15) which the p-doped second light emitting diode layer (4) faces, and in that at least one highly doped first semiconductor layer (7), the dopant concentration of which is greater than the dopant concentration of the second light emitting diode layer (4), is arranged between the second light emitting diode layer (4) and the interlayer (8).

Abstract translation: 光电子器件（20），包括一个叠层（10），至少包括：一个层序列，其是一种半导体发光二极管（5）和至少一个第一发光二极管（2），第二发光层（4）和光学活性区域（3） 第一（2）和第二发光层（4），其中所述两个发光层（2,4）分别由III-V族半导体材料，元素铝，镓和铟的至少一种形成，并且在每种情况下之间 包含的元素氮，磷和砷的至少一种，并且其中，所述第一发光层（2）的n型掺杂层和第二发光层（4）p型掺杂的层，含银金属层（9）和一个中间层（8 ），其特征在于透明导电氧化物，其被设置在半导体发光二极管（15）和所述金属层（9）之间的，所述金属 金属层（9）和所述中间层（8）上的半导体发光二极管的那侧（15）被布置成面对所述p型第二发光层（4），并且所述第二发光层（4）和中间层（8）之间 （7）被布置在至少一个高度掺杂的第一半导体层，掺杂剂浓度比所述第二发光层（4）的掺杂剂浓度。

公开(公告)号：WO02073705A8

公开(公告)日：2003-11-13

申请号：PCT/DE0200514

申请日：2002-02-13

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  BAUR JOHANNES ,  EISERT DOMINIK ,  FEHRER MICHAEL ,  HAHN BERTHOLD ,  HAERLE VOLKER ,  ORTMANN MARIANNE ,  STRAUSS UWE ,  VOELKL JOHANNES ,  ZEHNDER ULRICH

Inventor： BAUR JOHANNES ,  EISERT DOMINIK ,  FEHRER MICHAEL ,  HAHN BERTHOLD ,  HAERLE VOLKER ,  ORTMANN MARIANNE ,  STRAUSS UWE ,  VOELKL JOHANNES ,  ZEHNDER ULRICH

IPC: H01L33/00 ,  H01L33/02 ,  H01L33/20

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/02 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/00014

Abstract: The invention relates to a radiation-emitting semiconductor component with an improved radiation yield and to a method for producing the same. The semiconductor element has a multilayer structure (2) with an active layer (3) for generating the radiation within the multilayer structure (2) and a window (1) with a first and a second primary surface. The multilayer structure adjoins the first primary surface (5) of the window (1). At least one recess is formed in the window (1), starting from the second primary surface (6), for increasing the radiation yield. The recess preferably has a trapezoidal cross-section, which tapers towards the first primary surface (5) and can be produced, for example, by sawing into the window.

Abstract translation: 本发明描述了一种具有改进的辐射效率和用于其生产的方法的发射辐射的半导体装置。 半导体器件具有具有活性层的多层结构（2）（3）多层结构体（2）和一个窗口（1）具有第一和第二主表面内产生的辐射。 邻近于所述第一主表面上的多层结构（5）的窗口（1）。 从第二主表面（6）前在窗口（1）形成用于提高辐射输出的至少一个凹部。 该凹部优选地具有梯形，所述第一主表面（5）逐渐变细的横截面，并且可以通过该窗口的锯来制备，例如。

公开(公告)号：WO03019637A3

公开(公告)日：2003-10-02

申请号：PCT/DE0202981

申请日：2002-08-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  BAUR JOHANNES ,  BRUEDERL GEORG ,  LELL ALFRED ,  NEU WALTER ,  OBERSCHMID RAIMUND

Inventor： BAUR JOHANNES ,  BRUEDERL GEORG ,  LELL ALFRED ,  NEU WALTER ,  OBERSCHMID RAIMUND

IPC: H01L21/28 ,  H01L21/268 ,  H01L21/324 ,  B23K26/00 ,  H01L21/225 ,  H01L29/45 ,  H01L33/00

CPC classification number: H01L21/3245 ,  H01L21/268

Abstract: The invention relates to a method for heat treating a surface layer (4) on a semiconductor substrate (5). Laser pulses (2), generated by a laser (1), are delivered to the surface layer (4). Said method permits, in particular, ohmic contacts to III-V compound semiconductors to be produced.

Abstract translation: 本发明涉及一种用于在半导体衬底（5）上的表面层（4）的热处理方法。 被排出到表面层（4）的激光脉冲（2），其由一激光器（1）中产生。 根据该方法，特别是欧姆接触到III-V族化合物半导体可以制造。

公开(公告)号：DE102018107673A1

公开(公告)日：2019-09-19

申请号：DE102018107673

申请日：2018-03-29

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： PICKEL SEBASTIAN ,  SARIC JOHANNES ,  SCHMID WOLFGANG ,  STROZECKA-ASSIG ANNA ,  BAUR JOHANNES

IPC: H01L33/46 ,  G02B1/00 ,  G02B5/08 ,  H01L33/30 ,  H01L33/38

Abstract: In einer Ausführungsform umfasst der optoelektronische Halbleiterchip (1) eine Halbleiterschichtenfolge (2) mit einer aktiven Zone (23) zur Erzeugung einer Strahlung. Die Halbleiterschichtenfolge (2) basiert auf AlInGaP und/oder auf AlInGaAs. Ein Metallspiegel (3) für die Strahlung befindet sich an einer einer Lichtauskoppelseite (10) gegenüberliegenden Rückseite (12) der Halbleiterschichtenfolge (2). Eine Schutzmetallisierung (6) ist direkt an einer der Halbleiterschichtenfolge (2) abgewandten Seite des Metallspiegels (3) angebracht. Eine Haftvermittlungsschicht (7) befindet sich direkt an einer der Halbleiterschichtenfolge (2) zugewandten Seite des Metallspiegels (3). Die Haftvermittlungsschicht (7) ist eine Verkapselungsschicht für den Metallspiegel (3), sodass der Metallspiegel (3) zumindest an einem äußeren Rand von der Haftvermittlungsschicht (7) zusammen mit der Schutzmetallisierung (6) verkapselt ist.

公开(公告)号：DE102015118041A1

公开(公告)日：2017-04-27

申请号：DE102015118041

申请日：2015-10-22

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BAUR JOHANNES

IPC: H01L33/14 ,  H01L33/10

Abstract: In einer Ausführungsform umfasst der Leuchtdiodenchip (1) eine Halbleiterschichtenfolge (2), die auf InGaAlP basiert und zur Erzeugung von Licht eingerichtet ist. Eine Stromaufweitungsschicht (3) befindet sich direkt an der Halbleiterschichtenfolge (2) und basiert auf AlGaAs. Eine Verkapselungsschicht (4) ist stellenweise direkt auf der Stromaufweitungsschicht (3) und/oder auf der Halbleiterschichtenfolge (2) aufgebracht. Eine mittlere Dicke der Verkapselungsschicht (4) liegt zwischen 10 nm und 200 nm und eine Defektdichte beträgt höchstens 10/mm2. Auf der Verkapselungsschicht (4) ist eine Abdeckschicht (5) aufgebracht. An einer der Halbleiterschichtenfolge (2) abgewandten Seite der Stromaufweitungsschicht (3) befindet sich eine nichtmetallische Reflexionsschicht (6), die zur Totalreflexion von Strahlung eingerichtet ist. Die Reflexionsschicht (6) ist direkt oder indirekt von der Verkapselungsschicht (4) bedeckt. An einer der Stromaufweitungsschicht (3) abgewandten Seite der Reflexionsschicht (6) befindet sich zumindest eine Spiegelschicht und/oder Haftvermittlungsschicht (71, 72).