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    Forming method for at least one region or at least one mesa structure or ridge structure electrically pumped in layer or in layer sequence
    1.
    发明专利
    Forming method for at least one region or at least one mesa structure or ridge structure electrically pumped in layer or in layer sequence 有权
    至少一个地区或至少一个MESA结构或RIDGE结构的形成方法电层或层层序列

    公开(公告)号：JP2004289149A

    公开(公告)日：2004-10-14

    申请号：JP2004074906

    申请日：2004-03-16

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： HOES CHRISTINE ,  WEIMAR ANDREAS ,  LEBER ANDREAS ,  LELL ALFRED ,  FISCHER HELMUT ,  HAERLE VOLKER

    IPC: H01L33/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/323

    CPC classification number: H01L33/005 ,  H01S5/021 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/32341 ,  Y10S438/951

    Abstract: PROBLEM TO BE SOLVED: To provide a forming method which is self-adjustable and forms a structure width especially of ≤2 μm technically and simply in the forming method for at least one mesa structure or ridge structure, or at least one region electrically pumped in a layer or in a layer sequence.
    SOLUTION: A mesa size or a ridge size is decided by structuring by mounting a mask layer on a sacrificial layer attached on the layer or on the layer sequence. The mesa structure or the ridge structure is formed in the layer or in the layer sequence by partially removing the sacrificial layer and the layer or the layer sequence. A sacrificial layer whose width is narrower compared with a layer remained on the sacrificial layer is left by selectively remove a part of the sacrificial layer from a side face of the exposed sacrificial layer. A coating is attached to an edge portion of the formed structure. The sacrificial layer is removed by fully coating the side face of the residual sacrificial layer by a coating material. Layers remained on the sacrificial layer are peeled off.
    COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种自调节的成形方法，在至少一个台面结构或脊结构的成形方法中技术上和简单地形成特别是≤2μm的结构宽度，或至少一个区域 以层或层序顺序电泵浦。 解决方案：通过在附着在层或层序列上的牺牲层上安装掩模层来构造台面尺寸或脊尺寸。 通过部分去除牺牲层和层或层序列，在层或层序中形成台面结构或脊结构。 通过从暴露的牺牲层的侧面选择性地去除牺牲层的一部分，留下了与残留在牺牲层上的层相比宽度窄的牺牲层。 涂层附着到所形成的结构的边缘部分。 通过涂覆材料完全涂覆残留牺牲层的侧面来去除牺牲层。 残留在牺牲层上的层被剥离。 版权所有（C）2005，JPO＆NCIPI

    OPTOELECTRONIC SEMICONDUCTOR BODY AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR BODY
    4.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR BODY AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR BODY 审中-公开
    光电子半导体本体及其制造方法的光电子半导体本体

    公开(公告)号：WO2009068006A2

    公开(公告)日：2009-06-04

    申请号：PCT/DE2008001957

    申请日：2008-11-26

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  WEISS GUIDO ,  HAHN BERTHOLD ,  ZEHNDER ULRICH ,  WEIMAR ANDREAS

    Inventor： WEISS GUIDO ,  HAHN BERTHOLD ,  ZEHNDER ULRICH ,  WEIMAR ANDREAS

    IPC: H01L33/02 ,  H01L33/22 ,  H01L33/32

    CPC classification number: H01L33/02 ,  H01L33/22 ,  H01L33/325 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention relates to an optoelectronic semiconductor body having an epitaxial semiconductor layer sequence based on nitride compound semiconductors. The semiconductor layer sequence comprises a buffer layer that is nominally undoped or doped in an at least partially n-conductive manner, an active zone suitable for emitting or receiving electromagnetic radiation, and a contact layer disposed between the buffer layer and the active zone that is doped in an n-conductive manner. The concentration of n-doping medium is greater in the contact layer than in the buffer layer. The semiconductor layer sequence comprises a recess extending through the buffer layer in which an electrical contact material is disposed, said recess adjoining the contact layer. The invention further relates to a method suitable for producing such a semiconductor body.

    Abstract translation: 提供了一种光电子半导体本体与氮化物化合物半导体的基础上的外延半导体层序列。 半导体层序列具有缓冲层，其名义上是未掺杂的至少部分掺杂或n型导电性，有源区域，其适合于发射的电磁辐射或要接收的，以及设置在所述缓冲层和所述有源区接触层，n之间 -conducting掺杂。 在接触层，所述n型掺杂剂浓度大于在所述缓冲层更大。 在该半导体层序列，凹部包括延伸穿过所述缓冲层和其中的电接触材料被布置成邻近所述接触层。 此外，提供了一种方法，其适于产生这样的半导体本体。

    THIN-FILM LED COMPRISING A CURRENT-DISPERSING STRUCTURE
    5.
    发明申请
    THIN-FILM LED COMPRISING A CURRENT-DISPERSING STRUCTURE 审中-公开
    薄膜的电流散布结构的LED

    公开(公告)号：WO2005071763A2

    公开(公告)日：2005-08-04

    申请号：PCT/DE2005000099

    申请日：2005-01-25

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  BAUR JOHANNES ,  HAHN BERTHOLD ,  HAERLE VOLKER ,  OBERSCHMID RAIMUND ,  WEIMAR ANDREAS

    Inventor： BAUR JOHANNES ,  HAHN BERTHOLD ,  HAERLE VOLKER ,  OBERSCHMID RAIMUND ,  WEIMAR ANDREAS

    IPC: H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  H01L33/00

    CPC classification number: H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention relates to a thin-film LED comprising an active layer (7) consisting of a nitride compound semiconductor that emits electromagnetic radiation (19) in a main radiation direction (15), a current-dispersing layer (9) succeeding the active layer (7) in the main radiation direction and consisting of a first nitride compound semiconductor material, a main surface (14) through which the radiation emitted in the main radiation direction (15) is decoupled, and a first contact layer (11, 12, 13) located on the main surface (14). According to the invention, the transversal conductivity of the current-dispersing layer (9) is increased by the formation of a two-dimensional electron or hole gas. The two-dimensional electron or hole gas is advantageously formed by embedding at least one layer (10) consisting of a second nitride compound semiconductor material in the current-dispersing layer (9).

    Abstract translation: 发射在薄膜LED具有有源层（7）由氮化物化合物半导体的，在主辐射方向上的电流扩散层以下的电磁辐射（19）（15），在所述主辐射方向上的有源层（7）中的一个（15）（9）由一个 第一氮化物半导体材料，一主表面（14），通过该主辐射方向发射的光（15）的辐射被耦合，和一个第一接触层（11，12，13），其被布置在所述主表面（14）上，所述电流扩展层的横向导电性 （9）增加通过形成二维电子或空穴气。 二维电子或空穴气的形成是通过嵌入至少一个层（10）制成在所述电流扩展层（9）的第二氮化物化合物半导体的有利地进行。

    8.
    发明专利
    未知

    公开(公告)号：DE102008035900A1

    公开(公告)日：2009-11-05

    申请号：DE102008035900

    申请日：2008-07-31

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： SABATHIL MATTHIAS ,  HOEPPEL LUTZ ,  WEIMAR ANDREAS ,  ENGL KARL ,  BAUR JOHANNES

    IPC: H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46 ,  H01L33/64

    Abstract: A light-emitting diode chip (1) with a semiconductor layer sequence (2) is described, which is contacted electrically by contacts (5) via a current spreading layer (3). The contacts (5) cover around 1%-8% of the surface of the semiconductor layer sequence (2). The contacts (5) consist for example of separate contact points (51), which are arranged at the nodes of a regular grid (52) with a grid constant of 12 mum. The current spreading layer (3) contains for example indium-tin oxide, indium-zinc oxide or zinc oxide and has a thickness in the range from 15 nm to 60 nm.

    9.
    发明专利
    未知

    公开(公告)号：DE102007046519A1

    公开(公告)日：2009-04-02

    申请号：DE102007046519

    申请日：2007-09-28

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： HAHN BERTHOLD ,  WEIMAR ANDREAS ,  BAUR JOHANNES ,  SABATHIL MATTHIAS ,  PLAINE GLENN-YVES

    IPC: H01L33/10 ,  H01L33/14 ,  H01L33/38 ,  H01L33/40

    Abstract: A thin-film LED comprising a barrier layer (3), a first mirror layer (2) succeeding the barrier layer (3), a layer stack (5) succeeding the first mirror layer (2), and at least one contact structure (6) succeeding the layer stack (5). The layer stack (5) has at least one active layer (5a) which emits electromagnetic radiation. The contact structure (6) is arranged on a radiation exit area (4) and has a contact area (7). The first mirror layer (2) has, in a region lying opposite the contact area of the contact structure (6), a cutout which is larger than the contact area (7) of the contact structure (6). The efficiency of the thin-film LED is increased as a result.

    10.
    发明专利
    未知

    公开(公告)号：DE10312214B4

    公开(公告)日：2008-11-20

    申请号：DE10312214

    申请日：2003-03-19

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： WEIMAR ANDREAS ,  LEBER ANDREAS ,  HOES CHRISTINE ,  HAERLE VOLKER ,  LELL ALFRED ,  FISCHER HELMUT

    IPC: H01S5/22 ,  H01L33/00 ,  H01S5/20 ,  H01S5/323

    Abstract: Process for preparation of a mesa- or bridge structure in a layer or layer series (LLS) in which their sides are coated by the steps: (a) application of a sacrificial layer (SL) to the LLS; (b) application and structuring of a mask layer onto the SL; (c) partial removal of the SP and the LLS, especially by anisotropic etching; (d) selective removal of part of the SL layer from the sides; (e) application of a coating to the sides of the structures obtained. An independent claim is included for a process for preparation of a Ridge-Waveguide-Laser diode chip.

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