公开(公告)号：WO2015111419A3

公开(公告)日：2015-10-08

申请号：PCT/JP2015000329

申请日：2015-01-26

Applicant: SONY CORP

Inventor： YAMAMOTO ATSUSHI ,  MIYAZAWA SHINJI ,  OOKA YUTAKA ,  MAEDA KENSAKU ,  MORIYA YUSUKE ,  OGAWA NAOKI ,  FUJII NOBUTOSHI ,  FURUSE SHUNSUKE ,  NAGATA MASAYA ,  YAMAMOTO YUICHI

IPC: H01L27/146

CPC classification number: H01L27/14618 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L2224/11

Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.

Abstract translation: 本技术涉及防止水分侵入芯片的技术。 各种示例性实施例包括图像传感器，其包括：基板; 层叠在所述基板上的多个层; 所述多个层包括在所述光电二极管层的表面上形成有多个光电二极管的光电二极管层; 所述多个层包括至少一个具有形成为使得所述至少一个层的一部分被挖出的凹槽的层; 以及在光电二极管层的上方形成并形成在沟槽内的透明树脂层。 本技术可以应用于例如图像传感器。

公开(公告)号：JP2005340288A

公开(公告)日：2005-12-08

申请号：JP2004153629

申请日：2004-05-24

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OGAWA NAOKI ,  IWAMOTO ISATO ,  MURAMATSU MASAFUMI

IPC: H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for reforming the surface of the damage layer of an interlayer insulating film, which is formed by dry etching, especially removing moisture remaining in a low dielectric constant insulating film (Low-k film) being the interlayer insulating film and restoring damage by plasma.
SOLUTION: The manufacturing method of the semiconductor device has a process for patterning the interlayer insulating film 4 formed in the semiconductor substrate 2 by dry etching, a process for cleaning the semiconductor substrate 2 having the interlayer insulating film 4, a process for drying the semiconductor substrate 2 having the interlayer insulating film 4 under reduced pressure, and a process for reforming the surface of the damage layer 10 in the interlayer insulating film 4 by dry etching. Drying under reduced pressure and surface reforming are continuously performed without exposing to atmosphere.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 解决的问题：提供一种半导体器件的制造方法，该半导体器件用于对通过干蚀刻形成的层间绝缘膜的损伤层的表面进行重整，特别是除去残留在低介电常数绝缘膜中的水分 低k膜）是层间绝缘膜，并恢复等离子体的损伤。 解决方案：半导体器件的制造方法具有通过干蚀刻图案化形成在半导体衬底2中的层间绝缘膜4的工艺，用于清洁具有层间绝缘膜4的半导体衬底2的工艺， 在减压下干燥具有层间绝缘膜4的半导体基板2，以及通过干蚀刻对层间绝缘膜4中的损伤层10的表面进行重整的工序。 连续进行减压干燥和表面重整，而不暴露于大气。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005217336A

公开(公告)日：2005-08-11

申请号：JP2004025053

申请日：2004-02-02

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YOKOTA MARI ,  FURUKAWA TOMOHARU ,  ASADA KAZUMI ,  OGAWA NAOKI

IPC: H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide a substrate cleaning equipment which can clean whole surface of a substrate such as a wafer or the like in uniformity and efficiency, and a cleaning method of the substrate.
SOLUTION: In the cleaning method of the substrate in which the substrate is cleaned in such a way that the substrate is rotated horizontally, and that cleaning liquid is jetted while a nozzle is transferred in a to-and-fro motion in a radial direction of the rotating substrate, the revolution speed of the substrate and/or the transfer speed of the nozzle are made variable. Further, after jetting the cleaning liquid while the above-mentioned nozzle is transferred, the method has a process of removing the cleaning liquid on the substrate by centrifugal force, and the revolution speed of the substrate is slowed down gradually when the above-mentioned nozzle is transferred toward the periphery edge of the substrate, when the nozzle is transferred toward a substrate center from the periphery edge of the substrate, and when the cleaning liquid is removed by the centrifugal force.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种能够均匀性和效率地清洁诸如晶片等的基板的整个表面的基板清洁设备以及基板的清洁方法。 解决方案：在衬底的清洁方法中，以基板水平旋转的方式清洁衬底，并且在喷嘴以一种往复运动方式转移喷嘴的同时喷射清洁液体 旋转基板的径向，基板的旋转速度和/或喷嘴的传送速度变化。 此外，在转移上述喷嘴之后喷射清洗液之后，该方法具有通过离心力去除基板上的清洗液的过程，并且当上述喷嘴 当喷嘴从基板的周边边缘朝向基板中心转移时，并且当通过离心力去除清洁液时，转移到基板的周边边缘。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005327807A

公开(公告)日：2005-11-24

申请号：JP2004142533

申请日：2004-05-12

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OGAWA NAOKI ,  IWAMOTO ISATO ,  ASADA KAZUMI ,  YOKOTA MARI ,  HINAGA YASUHIRO ,  NISHIMATSU TAKESHI

IPC: G02F1/1333 ,  B08B3/02 ,  B08B3/04 ,  B08B3/08 ,  B08B3/12 ,  H01L21/00 ,  H01L21/304

CPC classification number: H01L21/67051 ,  B08B3/04

Abstract: PROBLEM TO BE SOLVED: To provide a sheet type washing method and its washing apparatus which can reduce defects on a substrate by rapidly performing transition to rinsing treatment without being influenced by a chemical liquid component, and suppressing the residue of a polymer or a chemical liquid.
SOLUTION: The sheet type washing method includes a step of washing a substrate 30 to be washed with the chemical liquid 8, a rinsing liquid 14 while rotating the substrate 30 to be washed. After a nozzle 10 for the chemical liquid is moved on the substrate 30 to be washed and treated with the chemical liquid, the rinsing liquid 14 is discharged from a rinsing nozzle 16 fixed and arranged at a position free from interferring with the movement of the nozzle 10 for the chemical liquid, and the substrate 30 to be washed is treated to be rinsed.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种片状洗涤方法及其洗涤装置，其可以通过在不受化学液体成分影响的情况下快速进行漂洗处理而抑制基板上的缺陷，并且抑制聚合物的残留物 一种化学液体。 解决方案：片状洗涤方法包括在旋转待洗涤的衬底30的同时，清洗用化学液体8洗涤的衬底30，漂洗液体14的步骤。 在用于化学液体的喷嘴10在基板30上移动以进行洗涤并用化学液体处理之后，冲洗液体14从固定并布置在无干扰位置的冲洗喷嘴16排出，喷嘴16的喷嘴 10，将待洗涤的基材30处理以进行漂洗。 版权所有（C）2006，JPO＆NCIPI