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    촬상 소자, 촬상 장치, 제조 장치 및 방법
    1.
    发明公开
    촬상 소자, 촬상 장치, 제조 장치 및 방법 审中-公开

    公开(公告)号：KR20200143513A

    公开(公告)日：2020-12-23

    申请号：KR20207036116

    申请日：2013-05-22

    Applicant: SONY CORP

    Inventor： OOTSUKA YOICHI ,  YAMAMOTO ATSUSHI ,  MAEDA KENSAKU

    IPC: H01L27/146

    Abstract: 본기술은, 감도특성의저감을억제할수 있도록하는촬상소자, 촬상장치, 제조장치및 방법에관한것이다. 본기술의촬상소자는, 수광영역에서광입사면이비평탄한비평탄층과, 상기비평탄층의상기광입사면측에중첩되는, 입사광을집광하는무기재의마이크로렌즈를구비한다. 예를들면, 상기마이크로렌즈가복수층으로이루어지도록하여도좋다. 또한, 본기술은, 이와같은촬상소자를제조하는제조장치나그 제조방법에도적용할수 있다. 또한, 본기술은, 예를들면, 촬상장치등의임의의장치에도적용할수 있다.

    Manufacturing method of solid-state imaging element, solid-state imaging element, and imaging device
    4.
    发明专利
    Manufacturing method of solid-state imaging element, solid-state imaging element, and imaging device 审中-公开
    固态成像元件，固态成像元件和成像装置的制造方法

    公开(公告)号：JP2013089898A

    公开(公告)日：2013-05-13

    申请号：JP2011231640

    申请日：2011-10-21

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： OGINO AKIKO ,  YAMAMOTO ATSUSHI ,  OTSUKA YOICHI

    IPC: H01L27/14 ,  G02B3/00

    Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a solid-state imaging element capable of easily manufacturing a solid-state imaging element having a small ineffective region of a lens.SOLUTION: A method for manufacturing a solid-state imaging element in which a lens 20 is provided above a light-receiving unit comprises the steps of: forming a lens base material layer 21 constituting the lens 20; forming an intermediate film 22 having a larger thermal expansion coefficient than a resist 23 on the lens base material layer 21; forming the resist 23 in contact with the intermediate film 22; forming the resist 23 into a lens shape by a thermal reflow; and forming the lens 20 by transferring a lens shape of the resist 23 to the lens base material layer 21 by etching.

    Abstract translation: 要解决的问题：提供一种能够容易地制造具有较小的透镜无效区域的固体摄像元件的固体摄像元件的制造方法。 解决方案：一种用于制造其中透镜20设置在光接收单元上方的固态成像元件的方法包括以下步骤：形成构成透镜20的透镜基材层21; 在透镜基材层21上形成具有比抗蚀剂23更大的热膨胀系数的中间膜22; 形成与中间膜22接触的抗蚀剂23; 通过热回流将抗蚀剂23形成为透镜形状; 并通过蚀刻将抗蚀剂23的透镜形状转印到透镜基材层21上来形成透镜20。 版权所有（C）2013，JPO＆INPIT

    Method of manufacturing solid-state image sensor
    5.
    发明专利
    Method of manufacturing solid-state image sensor 审中-公开
    制造固态图像传感器的方法

    公开(公告)号：JP2011146633A

    公开(公告)日：2011-07-28

    申请号：JP2010008174

    申请日：2010-01-18

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： YAMAMOTO ATSUSHI

    IPC: H01L27/14 ,  H04N5/335

    Abstract: PROBLEM TO BE SOLVED: To provide a solid-state image sensor that prevents the peeling of a film and dropping of a deposit on a sidewall in a dicing process to suppress reduction of the yield, and to provide a method of manufacturing the same.
    SOLUTION: The method of manufacturing the solid-state image sensor includes a barrier forming step of forming a barrier on a scribe line defining an element forming region including an imaging region having microlenses formed on the surface thereof with a predetermined gap provided between the sidewall of the element forming region and the barrier, an antireflection film forming step of forming an antireflection film on the surfaces of the microlenses and in the gap, and a barrier removing step of removing the barrier.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种在切割工艺中防止膜的剥离和侧壁上的沉积物滴落以抑制产率降低的固态图像传感器，并且提供一种制造方法 相同。 解决方案：制造固态图像传感器的方法包括：屏障形成步骤，其在限定元件形成区域的划线上形成屏障，该元件形成区域包括在其表面上形成有微透镜的成像区域， 元件形成区域和屏障的侧壁，在微透镜的表面和间隙中形成防反射膜的防反射膜形成步骤以及去除屏障的屏障去除步骤。 版权所有（C）2011，JPO＆INPIT

    Solid state imaging device, manufacturing method therefor and electronic apparatus
    7.
    发明专利
    Solid state imaging device, manufacturing method therefor and electronic apparatus 有权
    固态成像装置及其制造方法及电子装置

    公开(公告)号：JP2012209542A

    公开(公告)日：2012-10-25

    申请号：JP2012044006

    申请日：2012-02-29

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： OGITA TOMOHARU ,  YAMAMOTO ATSUSHI ,  TAYA KEIJI ,  OTSUKA YOICHI ,  TABUCHI KIYOTAKA

    IPC: H01L27/14

    CPC classification number: H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14685

    Abstract: PROBLEM TO BE SOLVED: To inhibit separation of a color filter in a solid state imaging device.SOLUTION: The solid state imaging device 100 comprises a pixel 112 having a photoelectric conversion element 11 which converts incident light into an electric signal, a color filter 15 formed corresponding to the pixel 112 and having a plurality of color filter components, a microlens 16 which focuses the incident light on the photoelectric conversion element 11 through the color filter 15, a light-shielding film 17 arranged between respective color filter components of the color filter 15, and a non-planarized adhesive film 19 provided between the color filter 15 and the light-shielding film 17.

    Abstract translation: 要解决的问题：抑制固态成像装置中的滤色器的分离。 解决方案：固态成像装置100包括具有将入射光转换为电信号的光电转换元件11的像素112，与像素112对应形成并具有多个滤色器组件的滤色器15， 微透镜16，其通过滤色器15将入射光聚焦在光电转换元件11上，布置在滤色器15的各滤色器部件之间的遮光膜17和设置在滤色器15之间的非平面化粘合膜19 15和遮光膜17.版权所有（C）2013，JPO＆INPIT

    Solid-state imaging device, method of manufacturing the same and electronic device
    8.
    发明专利
    Solid-state imaging device, method of manufacturing the same and electronic device 有权
    固态成像装置，其制造方法和电子装置

    公开(公告)号：JP2010239077A

    公开(公告)日：2010-10-21

    申请号：JP2009088097

    申请日：2009-03-31

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： WANO HIROMI ,  TODA ATSUSHI ,  OTSUKA YOICHI ,  YAMAMOTO ATSUSHI

    IPC: H01L27/14 ,  H04N5/335 ,  H04N5/357 ,  H04N5/359 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374

    CPC classification number: H01L27/14627 ,  H01L27/14685 ,  H01L27/14843 ,  H04N5/2257 ,  H04N5/3728 ,  H04N9/045

    Abstract: PROBLEM TO BE SOLVED: To provide a solid-state imaging device that suppresses flare or ghost, a method of manufacturing the same and an electronic device using the same. SOLUTION: In the solid-state imaging device 1, incident light is collected onto a light receiving portion 2 formed on a substrate 9 by using a rectangular on-chip microlens 19. Also, a flat lens layer 20 is formed on an upper portion of the on-chip microlens 19. Generation of reflected diffraction light caused by a periodic structure is suppressed since the periodic structure such as the on-chip microlens 19 is not formed on an interface between a surface of the incident light of the solid imaging device 1 and air by allowing the flat lens layer 20 to be formed. This suppresses the ghost or flare. Also, sufficient light collecting characteristics is achieved and the sensitivity is improved by allowing the on-chip microlens 19 to be a rectangular shape (or graded refractive index) even if the flat lens layer 20 is used. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种抑制闪光或重影的固态成像装置，其制造方法和使用该固态成像装置的电子装置。 解决方案：在固态成像装置1中，通过使用矩形片上微透镜19将入射光聚集到形成在基板9上的光接收部分2上。此外，平坦透镜层20形成在 片上微透镜19的上部由于周期性结构引起的反射衍射光的产生被抑制，因为在固体的入射光的表面之间的界面上没有形成诸如片上微透镜19的周期性结构 成像装置1和空气通过允许形成平坦透镜层20。 这样可以抑制鬼魂或闪光。 此外，即使使用平坦透镜层20，也可以通过使片上微透镜19为矩形形状（或渐变折射率）来实现足够的聚光特性并提高灵敏度。 版权所有（C）2011，JPO＆INPIT

    Method of manufacturing solid-state imaging element and solid-state imaging element
    9.
    发明专利
    Method of manufacturing solid-state imaging element and solid-state imaging element 有权
    制造固态成像元件和固态成像元件的方法

    公开(公告)号：JP2011003670A

    公开(公告)日：2011-01-06

    申请号：JP2009144572

    申请日：2009-06-17

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： TOGU AKIHIRO ,  HORI INA ,  DOFUKU TADAYUKI ,  KAMIIE HITOMI ,  YAMAMOTO ATSUSHI ,  NATORI TAICHI

    IPC: H01L27/14 ,  H04N5/335

    CPC classification number: H01L27/14627 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/148

    Abstract: PROBLEM TO BE SOLVED: To manufacture a solid-state imaging element capable of suppressing the damage of a microlens material layer or the like due to hydrophilization treatment.SOLUTION: The method of manufacturing the solid-state imaging element includes a process of forming a light receiving part in the light receiving region 11 of a semiconductor substrate, a process of forming a pad part 24 in the pad region 12 of the semiconductor substrate, a process of forming the microlens material layer 22 on the upper layer of the light receiving part and the pad part 24, a process of forming a microlens corresponding to the light receiving part in the microlens material layer 22, a process of forming a low reflection material layer 23 on the microlens material layer 22, a process of etching the microlens material layer 22 and the low reflection material layer 23 on the pad part 24 and forming an opening 25, and a process of hydrophilizing the surface of the low reflection material layer 23 and the inside of the opening 25 by normal temperature oxygen radical treatment.

    Abstract translation: 要解决的问题：制造能够抑制由于亲水化处理而导致的微透镜材料层等的损伤的固态成像元件。解决方案：制造固态成像元件的方法包括形成光的过程 接收部分在半导体衬底的光接收区域11中，在半导体衬底的焊盘区域12中形成焊盘部分24的工艺，在光接收部分的上层上形成微透镜材料层22的工艺，以及 焊盘部分24，在微透镜材料层22中形成对应于光接收部分的微透镜的工艺，在微透镜材料层22上形成低反射材料层23的工艺，蚀刻微透镜材料层22的工艺 以及焊盘部分24上的低反射材料层23并形成开口25，并且使低反射材料层23a的表面亲水化的工序 通过常温氧自由基处理开启开口25的内部。

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