公开(公告)号：JP2017085083A

公开(公告)日：2017-05-18

申请号：JP2016176223

申请日：2016-09-09

Applicant: Sppテクノロジーズ株式会社 ,  Spp Technologies Co Ltd

Inventor： SASAKURA MASAHIRO ,  YAMAMOTO TAKASHI ,  OTA KAZUYA

IPC: H01L21/3065 ,  H05H1/46

Abstract: 【課題】加工精度を向上可能な半導体素子の製造方法を提供する。【解決手段】本実施形態の半導体素子の製造方法は、プラズマが生成されるプラズマ生成空間と、プラズマ生成空間の下方に配置されプラズマ生成空間とつながる処理空間とを有するチャンバ内において、半導体基板が載置された試料台を基準高さH1に配置し、プラズマ生成空間でプラズマを生成して半導体基板に対してエッチングを実施する工程と、基準高さと異なる特定高さH2に試料台を配置し、プラグマ生成空間でプラズマを生成して半導体基板に対してエッチングを実施する工程とを備える。【選択図】図9

公开(公告)号：EP2903019A4

公开(公告)日：2016-06-08

申请号：EP13842461

申请日：2013-09-25

Applicant: SPP TECHNOLOGIES CO LTD

Inventor： YAMAMOTO TAKASHI ,  OTA KAZUYA ,  SASAKURA MASAHIRO ,  HAYASHI YASUYUKI

IPC: H01L21/3065 ,  H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32623 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32458 ,  H01J37/32568 ,  H01J37/32633 ,  H01J37/32724 ,  H01J2237/0656 ,  H01J2237/15 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H05H1/46 ,  H05H2001/4667

Abstract: The present invention relates to a substrate etching device capable of improving uniformity of in-plane density of generated plasma to uniformly etch an entire substrate surface. A plasma etching device 1 includes a chamber 2 having a plasma generation space 3 and a processing space 4 set therein, a coil 30 disposed outside an upper body portion 6, a platen 40 disposed in the processing space 4 for placing a substrate K thereon, an etching gas supply mechanism 25 supplying an etching gas into the plasma generation space 3, a coil power supply mechanism 35 supplying RF power to the coil 30, and a platen power supply mechanism 45 supplying RF power to the platen 40. Further, a tapered plasma density adjusting member 20 is fixed on an inner wall of the chamber 2 between the plasma generation space 3 and the platen 40 and, in an upper portion of the chamber 2, a cylindrical core member 10 having a tapered portion formed thereon having a diameter decreasing toward a lower end surface thereof is arranged to extend downward.