公开(公告)号：WO2005059978A3

公开(公告)日：2005-08-18

申请号：PCT/FR2004050713

申请日：2004-12-16

Applicant: ST MICROELECTRONICS SA ,  ST MICROELECTRONICS CROLLES 2 ,  BENSAHEL DANIEL ,  CAMPIDELLI YVES ,  KERMARREC OLIVIER

Inventor： BENSAHEL DANIEL ,  CAMPIDELLI YVES ,  KERMARREC OLIVIER

IPC: G02B5/18 ,  G02B27/44 ,  H01L21/20 ,  H01L29/04 ,  H01L31/0352

CPC classification number: H01L29/04 ,  B82Y10/00 ,  G02B1/02 ,  G02B5/18 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02532 ,  H01L31/0352 ,  Y10T428/29

Abstract: The invention relates to a single-crystal layer of a first semiconductor material (5) comprising single-crystal nanostructures of a second semiconductor material (3), said nanostructures being distributed in a regular crystallographic network with a centred tetragonal prism.

Abstract translation: 本发明涉及包括第二半导体材料（3）的单晶纳米结构的第一半导体材料（5）的单晶层，所述纳米结构分布在具有中心四棱柱的规则晶体网络中。

公开(公告)号：FR2853452B1

公开(公告)日：2005-08-19

申请号：FR0304008

申请日：2003-04-01

Applicant: ST MICROELECTRONICS SA

Inventor： COSNIER VINCENT ,  MORAND YVES ,  KERMARREC OLIVIER ,  BENSAHEL DANIEL ,  CAMPIDELLI YVES

IPC: H01L21/28 ,  H01L29/49 ,  H01L29/51

Abstract: The fabrication of a semiconductor device having a dielectric grid of a material with a high dielectric permittivity includes a stage (40) of deposition, directly on the grid dielectric, of a first layer of Si1-xGex with 0.5 less than x = 1, at a temperature essentially low with respect to the temperature of deposition of poly-Si by thermal chemical vapour deposition. An independent claim is also claimed for the semiconductor device thus fabricated.

公开(公告)号：FR2812763A1

公开(公告)日：2002-02-08

申请号：FR0010346

申请日：2000-08-04

Applicant: ST MICROELECTRONICS SA

Inventor： BENSAHEL DANIEL ,  KERMARREC OLIVIER ,  CAMPIDELLI YVES

IPC: H01L21/20 ,  H01L29/12 ,  H01L33/00 ,  H01L33/06 ,  H01L21/205

Abstract: Formation of quantum dots (41) on a monocrystalline semiconductor substrate (40) involves gas-phase epitaxy of the quantum dot material on the substrate under optimum growth conditions to ensure growth at a controllable maximum rate. In an initial stage, quantum dot material gas is blown onto the substrate to provide a deposition rate distinctly higher than the controllable maximum rate. The substrate (40) material can be silicon (Si) and the quantum dot (41) material can be germanium (Ge). The substrate (40) material can be Si or Ge and the quantum dot (41) material can be a rare earth. The substrate material (40) can be silicon oxide and the quantum dot (41) material can be silicon nitride.

公开(公告)号：FR2853451B1

公开(公告)日：2005-08-05

申请号：FR0304152

申请日：2003-04-03

Applicant: ST MICROELECTRONICS SA

Inventor： BENSAHEL DANIEL ,  KERMARREC OLIVIER ,  MORAND YVES ,  CAMPIDELLI YVES ,  COSNIER VINCENT

IPC: C30B25/18 ,  H01L21/20

公开(公告)号：FR2853451A1

公开(公告)日：2004-10-08

申请号：FR0304152

申请日：2003-04-03

Applicant: ST MICROELECTRONICS SA

Inventor： BENSAHEL DANIEL ,  KERMARREC OLIVIER ,  MORAND YVES ,  CAMPIDELLI YVES ,  COSNIER VINCENT

IPC: C30B25/18 ,  H01L21/20

Abstract: The epitaxial formation of a hetero-atomic monocrystalline semiconductor layer (21) on a monocrystalline semiconductor slice (20), the crystalline networks of the layer and the slice being different, incorporates a stage of forming, before epitaxy, in the surface of the slice, at least one annulus of discontinuities around a useful region. An independent claim is also included for a monocrystalline semiconductor slice covered by a hetero-atomic monocrystalline semiconductor layer.

公开(公告)号：FR2853452A1

公开(公告)日：2004-10-08

申请号：FR0304008

申请日：2003-04-01

Applicant: ST MICROELECTRONICS SA

Inventor： COSNIER VINCENT ,  MORAND YVES ,  KERMARREC OLIVIER ,  BENSAHEL DANIEL ,  CAMPIDELLI YVES

IPC: H01L21/28 ,  H01L29/49 ,  H01L29/51

Abstract: The fabrication of a semiconductor device having a dielectric grid of a material with a high dielectric permittivity includes a stage (40) of deposition, directly on the grid dielectric, of a first layer of Si1-xGex with 0.5 less than x = 1, at a temperature essentially low with respect to the temperature of deposition of poly-Si by thermal chemical vapour deposition. An independent claim is also claimed for the semiconductor device thus fabricated.

公开(公告)号：FR2812763B1

公开(公告)日：2002-11-01

申请号：FR0010346

申请日：2000-08-04

Applicant: ST MICROELECTRONICS SA

Inventor： BENSAHEL DANIEL ,  KERMARREC OLIVIER ,  CAMPIDELLI YVES

IPC: H01L21/20 ,  H01L29/12 ,  H01L33/00 ,  H01L33/06 ,  H01L21/205

Abstract: L'invention concerne un procédé de formation, sur un substrat semiconducteur monocristallin (40) d'un premier matériau, de boîtes quantiques (41) en un second matériau, consistant à faire croître par épitaxie en phase gazeuse le second matériau sur le premier matériau dans des conditions optimales propres à assurer une croissante à une vitesse contrôlable maximum. Dans une étape initiale, on envoie sur le substrat une bouffée d'un gaz comprenant le second matériau, dans des conditions correspondant à une vitesse de dépôt nettement plus rapide que ladite vitesse contrôlable maximum.