公开(公告)号：JPH11195715A

公开(公告)日：1999-07-21

申请号：JP29938198

申请日：1998-10-21

Applicant: ST MICROELECTRONICS SRL

Inventor： MULATTI JACOPO ,  ZANARDI STEFANO ,  GOLLA CARLA MARIA ,  CONCI ARMANDO

IPC: H01L21/8238 ,  H01L27/02 ,  H01L27/092 ,  H03K17/16 ,  H03K19/003 ,  H03K19/0175

Abstract: PROBLEM TO BE SOLVED: To reduce the effects of noise exerted to an input stage and internal circuit of an integrated circuit by an output stage of the integrated circuit. SOLUTION: An output stage for an integrated circuit is provided with a first transistor means P2 and a second transistor means N2, serially connected between a first external voltage Vcc and a second external voltage Gnd on the outside of the integrated circuit 100 respectively, through a first and a second electric connection means L2 and L4. The first transistor means P2 transmits the first external voltage Vcc to an output line 5 of the integrated circuit, and the second transistor means N2 transmits the second external voltage Gnd to the output line 5 of the integrated circuit. The second transistor means N2 is formed inside a first well 130 of a first conductivity type provided inside a second well 140 of a second conductivity type formed inside a substrate 7 of the first conductivity type. The second well 140 of the second conductive type is connected through a third electric connection means L21 which is different from the first electric connection means L2 to the first external voltage Vcc.

公开(公告)号：DE69622149D1

公开(公告)日：2002-08-08

申请号：DE69622149

申请日：1996-03-21

Applicant: ST MICROELECTRONICS SRL

Inventor： BRANCHETTI MAURIZIO ,  CONCI ARMANDO ,  GOLLA CARLA

IPC: G06F11/10

Abstract: The invention relates to a method of recovering faulty non-volatile memories. This method can be applied to an electrically programmable semiconductor non-volatile memory device being set up as a multi-sectors memory matrix and including selection circuitry for selecting words or individual bytes of the memory. According to this method, the memory matrix is addressed by byte, rather than by memory word, by acting said selection circuitry, whenever the device fails an operation test. The use of a Hamming code of error correction to remedy malfunctions due to manufacture allows the method to be applied to those devices which fail their test and would otherwise be treated as rejects.

公开(公告)号：DE69720725D1

公开(公告)日：2003-05-15

申请号：DE69720725

申请日：1997-10-24

Applicant: ST MICROELECTRONICS SRL

Inventor： MULATTI JACOPO ,  ZANARDI STEFANO ,  GOLLA CARLA MARIA ,  CONCI ARMANDO

IPC: H01L21/8238 ,  H01L27/02 ,  H01L27/092 ,  H03K17/16 ,  H03K19/003 ,  H03K19/0175

公开(公告)号：DE69622149T2

公开(公告)日：2002-11-28

申请号：DE69622149

申请日：1996-03-21

Applicant: ST MICROELECTRONICS SRL

Inventor： BRANCHETTI MAURIZIO ,  CONCI ARMANDO ,  GOLLA CARLA

IPC: G06F11/10

Abstract: The invention relates to a method of recovering faulty non-volatile memories. This method can be applied to an electrically programmable semiconductor non-volatile memory device being set up as a multi-sectors memory matrix and including selection circuitry for selecting words or individual bytes of the memory. According to this method, the memory matrix is addressed by byte, rather than by memory word, by acting said selection circuitry, whenever the device fails an operation test. The use of a Hamming code of error correction to remedy malfunctions due to manufacture allows the method to be applied to those devices which fail their test and would otherwise be treated as rejects.