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    MANUFACTURE OF SOI WAFER
    1.
    发明专利
    MANUFACTURE OF SOI WAFER 失效

    公开(公告)号：JP2000031440A

    公开(公告)日：2000-01-28

    申请号：JP13446299

    申请日：1999-05-14

    Applicant: ST MICROELECTRONICS SRL

    Inventor： BARLOCCHI GABRIELE ,  VILLA FLAVIO FRANCESCO

    IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/762 ,  H01L27/12

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a SOI wafer with a complete single-crystal substrate, having advantages inherent in conventional technology, at a competitive price and complying with present standards. SOLUTION: A method for manufacturing a SOI wafer has a step for forming a doped region 18 on a single-crystal substrate 2, a step for growing an epitaxial layer, a step for forming grooves 25 in the epitaxial layer regarding the doped region 18, a step for forming porous silicon region by anodizing the doped regions 18 in an electrochemical electrolytic cell, a step for oxidizing the porous silicon regions, a step for forming embedded air gaps by eliminating the oxidized porous silicon regions, a step for growing oxide regions from walls of the embedded air gaps and grooves 25 until the wafer 15 is oxidized through heating and the air gaps and the grooves 25 themselves are completely filled.

    4.
    发明专利
    未知

    公开(公告)号：ITUB20155716A1

    公开(公告)日：2017-05-19

    申请号：ITUB20155716

    申请日：2015-11-19

    Applicant: ST MICROELECTRONICS SRL

    Inventor： BALDO LORENZO ,  DUQI ENRI ,  VILLA FLAVIO FRANCESCO

    Abstract: A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.

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