1.
    发明专利
    未知

    公开(公告)号:DE69527702T2

    公开(公告)日:2002-12-05

    申请号:DE69527702

    申请日:1995-04-28

    Abstract: The invention concerns a method of detecting a spark produced by means of a spark coil (L) having a primary circuit (L') connected to a supply voltage generator (Vb) and a secondary circuit (L'') with the spark coil (L) being inserted in an electronic ignition device of an internal combustion motor. The method consists of the following phases: generation of a voltage signal (U) proportional to a voltage (VL) present on the primary circuit of the spark coil (L), comparison of the voltage signal (U) with a first, upper, threshold value (U1) by means of a comparator (C) with hysteresis, comparison by means of said comparator (C) of the voltage signal (U) with a second, lower, threshold value (U2) proportional to the supply voltage (Vb), detection of the duration of a voltage (Vc) output from the comparator (C), and signalling of the presence of the spark if said duration is greater than a reference value (B).

    2.
    发明专利
    未知

    公开(公告)号:DE69527702D1

    公开(公告)日:2002-09-12

    申请号:DE69527702

    申请日:1995-04-28

    Abstract: The invention concerns a method of detecting a spark produced by means of a spark coil (L) having a primary circuit (L') connected to a supply voltage generator (Vb) and a secondary circuit (L'') with the spark coil (L) being inserted in an electronic ignition device of an internal combustion motor. The method consists of the following phases: generation of a voltage signal (U) proportional to a voltage (VL) present on the primary circuit of the spark coil (L), comparison of the voltage signal (U) with a first, upper, threshold value (U1) by means of a comparator (C) with hysteresis, comparison by means of said comparator (C) of the voltage signal (U) with a second, lower, threshold value (U2) proportional to the supply voltage (Vb), detection of the duration of a voltage (Vc) output from the comparator (C), and signalling of the presence of the spark if said duration is greater than a reference value (B).

    METHOD AND CIRCUIT FOR GENERATING ANALYSIS SIGNAL WHEN CURRENT FLOWING THROUGH POWER TRANSISTOR REACHES LEVEL CLOSETO LIMIT CURRENT

    公开(公告)号:JPH07260838A

    公开(公告)日:1995-10-13

    申请号:JP31904394

    申请日:1994-11-29

    Abstract: PURPOSE: To generate a diagnostic signal indicating reach of current flowing through a power transistor in a presetting level by driving the first circuit, in which maximum current is restricted by a single signal serving as a function of the voltage difference, and a threshold circuit generating the diagnostic signal. CONSTITUTION: A comparator is constructed of a differential amplifier A which can generate a signal as a function of the difference between a reverence voltage E1 and a voltage in a sensing resistor RS, through which current IC flowing in a power transistor T1 (and a load L) flows. The signal generated by the comparator A drives two circuits. The first circuit (LIMITATOR) generates a restriction signal for the maximum current flowing in the transistor T1 and works on a driving circuit (DRIVE) transmitting driving current to the transistor T1 . The second circuit (DIAGNOSTIC) is set by the first circuit and generates a diagnostic signal VD, after the current IC reaches a value smaller than the limit value for the current IC by the previously set value.

    VOLTAGE REFERENCE CIRCUIT WITH NEGATIVE LINEAR TEMPERATURE CHANGE

    公开(公告)号:JPH07295667A

    公开(公告)日:1995-11-10

    申请号:JP32961594

    申请日:1994-12-02

    Abstract: PURPOSE: To provide a circuit that generates a reference voltage with negative temperature coefficient together with a band gap reference voltage with positive temperature coefficient. CONSTITUTION: This circuit includes a network consisting of a Vbe voltage multiplier circuit (K'Vbe) circulating a properly stabilized current against change in a supply voltage between an output node A of an amplifier and a band gap voltage generating network, at least one resistor R connected between a band gap voltage node and ground, and resistive voltage dividers R1, R2 connected to between an output node and ground.

    THREE-TERMINAL INSULATED-GATE POWER ELECTRONIC DEVICE

    公开(公告)号:JPH08107340A

    公开(公告)日:1996-04-23

    申请号:JP8709695

    申请日:1995-04-12

    Inventor: PALARA SERGIO

    Abstract: PURPOSE: To obtain three-terminal power electronic equipment whose power consumption does not increase in both small output current and large output current. CONSTITUTION: Three-terminal insulating gate type power electronic equipment which contains a 1st bipolar power transistor T2 and a 2nd insulated gate transistor T1 which form a Darlington pair contains a switching means T3 that is connected between a control electrode B2 of the transistor T2 and a 2nd electrode E2 and a control circuit means H which is connected to the other 2nd electrode S12 of the transistor T1, controls the means T3 and switches between a high conductive state to a low value of current I that flows through a 1st C and a 2nd external terminal E and non-conductive state to a high value of the current I that flows through the 1st C and the terminal E.

    MONOLYTHIC VERTICAL SEMICONX DUCTOR POWER DEVICE PROVIDED WITH PROTECTION FROM PARASITIC CURRENT

    公开(公告)号:JPH03173169A

    公开(公告)日:1991-07-26

    申请号:JP30894190

    申请日:1990-11-16

    Abstract: PURPOSE: To stabilize the operational characteristics by entirely covering the projecting end of an insulating pocket with a first grounded metallization part. CONSTITUTION: In order to overcome voltage rise at an insulation pocket P caused by the presence of a parasitic transistor, projecting end of the insulating pocket is covered entirely with a metallization part 21, e.g. a metal polysilicide, preferably a platinum layer. It has a resistance of about 1Ω/square which is about 100 times as low as that of the insulation pocket P. Some region of the insulation pocket Preaches a grounded metal track of aluminum and comes into contact therewith. Since the leakage current of parasitic transistors T3, T4 is passed through a low resistance path and grounded, it causes no voltage rise at the insulation pocket P.

    10.
    发明专利
    未知

    公开(公告)号:DE69530077D1

    公开(公告)日:2003-04-30

    申请号:DE69530077

    申请日:1995-07-31

    Abstract: The principle on which the start up circuit of this invention operates is that of causing the MOS transistor (M2) to be turned on by sensing local electrical quantities thereof, specifically the potential at the drain terminal (D) of the MOS transistor (M2). The basic idea is to inject a small current into the control terminal (G) when the potential at the drain terminal (D) is high. For the purpose, an electric network (SN) is arranged to couple these two terminals together.

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