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公开(公告)号:CN1536658A
公开(公告)日:2004-10-13
申请号:CN200410031330.3
申请日:2004-03-26
Applicant: 株式会社瑞萨科技
CPC classification number: H01L24/85 , H01L21/565 , H01L23/3128 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L24/97 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/05624 , H01L2224/05644 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45164 , H01L2224/4807 , H01L2224/48091 , H01L2224/48227 , H01L2224/48453 , H01L2224/48455 , H01L2224/48465 , H01L2224/4847 , H01L2224/48624 , H01L2224/48644 , H01L2224/48724 , H01L2224/49171 , H01L2224/49431 , H01L2224/49433 , H01L2224/73265 , H01L2224/78301 , H01L2224/78704 , H01L2224/85045 , H01L2224/85181 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/92247 , H01L2224/97 , H01L2924/00011 , H01L2924/01202 , H01L2924/01204 , H01L2924/014 , H01L2924/05042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/20752 , H01L2924/351 , H01L2924/01046 , H01L2224/85 , H01L2924/00014 , H01L2924/01013 , H01L2924/00 , H01L2924/00012 , H01L2224/48744 , H01L2924/00015 , H01L2924/0102 , H01L2924/013 , H01L2924/01004 , H01L2924/00013 , H01L2924/01006
Abstract: 接合焊盘和金线的球部分之间的粘附力得以改善以提高半导体器件的可靠性。约1wt.%的Pd含在金线中,金线用于连接形成在布线基板上的电极焊盘和形成在半导体芯片上的电极焊盘(主要由Al形成的顶层布线的露出区域),由此,在形成在半导体芯片上的电极焊盘和金线的球部分之间的接合部分中,抑制了Au和Al的相互扩散,以防止PCT(压力锅蒸煮试验)之后形成Au4Al。由于防止了易于被腐蚀的Au4Al的形成,即使形成在半导体芯片上的电极焊盘的间距小于65μm并且每个金线的球部分的直径小于55μm或每个金线的线部分的直径不大于25μm的情况中,也可以得到需要的金线接合强度。同样在顶层布线很厚或者很薄或者接合温度很低的情况中也可以确保需要的接合强度。
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公开(公告)号:CN100375278C
公开(公告)日:2008-03-12
申请号:CN200410031330.3
申请日:2004-03-26
Applicant: 株式会社瑞萨科技
CPC classification number: H01L24/85 , H01L21/565 , H01L23/3128 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L24/97 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/05624 , H01L2224/05644 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45164 , H01L2224/4807 , H01L2224/48091 , H01L2224/48227 , H01L2224/48453 , H01L2224/48455 , H01L2224/48465 , H01L2224/4847 , H01L2224/48624 , H01L2224/48644 , H01L2224/48724 , H01L2224/49171 , H01L2224/49431 , H01L2224/49433 , H01L2224/73265 , H01L2224/78301 , H01L2224/78704 , H01L2224/85045 , H01L2224/85181 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/92247 , H01L2224/97 , H01L2924/00011 , H01L2924/01202 , H01L2924/01204 , H01L2924/014 , H01L2924/05042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/20752 , H01L2924/351 , H01L2924/01046 , H01L2224/85 , H01L2924/00014 , H01L2924/01013 , H01L2924/00 , H01L2924/00012 , H01L2224/48744 , H01L2924/00015 , H01L2924/0102 , H01L2924/013 , H01L2924/01004 , H01L2924/00013 , H01L2924/01006
Abstract: 接合焊盘和金线的球部分之间的粘附力得以改善以提高半导体器件的可靠性。约1wt.%的Pd含在金线中,金线用于连接形成在布线基板上的电极焊盘和形成在半导体芯片上的电极焊盘(主要由Al形成的顶层布线的露出区域),由此,在形成在半导体芯片上的电极焊盘和金线的球部分之间的接合部分中,抑制了Au和Al的相互扩散,以防止PCT(压力锅蒸煮试验)之后形成Au4Al。由于防止了易于被腐蚀的Au4Al的形成,即使形成在半导体芯片上的电极焊盘的间距小于65μm并且每个金线的球部分的直径小于55μm或每个金线的线部分的直径不大于25μm的情况中,也可以得到需要的金线接合强度。同样在顶层布线很厚或者很薄或者接合温度很低的情况中也可以确保需要的接合强度。
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