Substrate etching method
    5.
    发明授权
    Substrate etching method 有权
    基板蚀刻方法

    公开(公告)号:US09478439B2

    公开(公告)日:2016-10-25

    申请号:US14646909

    申请日:2013-11-01

    Inventor: Zhongwei Jiang

    Abstract: Embodiments of the invention provide a substrate etching method, which includes: a deposition operation for depositing a polymer on a side wall of a silicon groove, an etching operation for etching the side wall of the silicon groove, and repeating the deposition operation and the etching operation at least twice. In the process of completing all cycles of the etching operation, a chamber pressure of a reaction chamber is decreased from a preset highest pressure to a preset lowest pressure according to a preset rule. The substrate etching method, according to various embodiments of the invention, avoid the problem of damaging the side wall, thereby making the side wall smooth.

    Abstract translation: 本发明的实施例提供了一种基板蚀刻方法,其包括:用于在硅槽的侧壁上沉积聚合物的沉积操作,用于蚀刻硅槽的侧壁的蚀刻操作,以及重复沉积操作和蚀刻 操作至少两次。 在完成蚀刻操作的所有循环的过程中,根据预设规则,反应室的室压力从预设的最高压力降低到预设的最低压力。 根据本发明的各种实施例的基板蚀刻方法避免了损坏侧壁的问题,从而使侧壁平滑。

    Methods for etching a substrate
    8.
    发明授权
    Methods for etching a substrate 有权
    蚀刻基板的方法

    公开(公告)号:US09318341B2

    公开(公告)日:2016-04-19

    申请号:US13305992

    申请日:2011-11-29

    Abstract: Methods for etching a substrate in a plasma etch reactor may include (a) depositing polymer on surfaces of a feature formed in substrate disposed in the etch reactor using first reactive species formed from a first process gas comprising a polymer forming gas; (b) etching the bottom surface of the feature of the substrate in the etch reactor using a third reactive species formed from a third process gas including an etching gas; and (c) bombarding a bottom surface of the feature with a second reactive species formed from a second process gas comprising one or more of an inert gas, an oxidizing gas, a reducing gas, or the polymer forming gas while at least one of depositing the polymer to remove at least some of the polymer disposed on the bottom surface or etching the bottom surface to at least one of chemically or physically damage the bottom surface.

    Abstract translation: 用于蚀刻等离子体蚀刻反应器中的衬底的方法可以包括(a)使用由包含聚合物形成气体的第一工艺气体形成的第一反应性物质将形成在衬底中的特征的表面上沉积聚合物; (b)使用由包括蚀刻气体的第三工艺气体形成的第三反应性物质蚀刻所述蚀刻反应器中所述衬底的所述特征的底表面; 和(c)用包含一种或多种惰性气体,氧化气体,还原性气体或形成聚合物的气体的第二工艺气体形成的第二反应性物质轰击所述特征的底部表面,同时沉积 所述聚合物除去布置在底表面上的至少一些聚合物或蚀刻底表面至少一种化学或物理损伤底表面。

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