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1.发明公开公开(公告)号：US20240208801A1
公开(公告)日：2024-06-27
申请号：US17747879
申请日：2022-05-18
Applicant: UPBEAT TECHNOLOGY Co., Ltd
Inventor： Hsi-Wen TUNG , Hsien-Lung HO
CPC classification number: B81B3/0021 , B81C1/00182 , B81B2201/0257 , B81B2201/0285 , B81B2203/0315 , B81B2203/0353 , B81C2201/013 , B81C2201/0159 , B81C2201/053
Abstract: A MEM vibration sensor includes a substrate and a sensing-device. The substrate includes a first supporting-portion and a cavity. The sensing-device includes a first sensing-unit, a second sensing-unit, a first metal pad and a second metal pad. The first sensing-unit includes a second supporting-portion and a vibrating-portion. The second supporting-portion is located on the first supporting-portion and is connected to the first supporting-portion via a first dielectric material. The vibrating-portion is located on the cavity, and is connected with the second supporting-portion through an elastic connecting-portion. The second sensing-unit is located on the first sensing-unit and includes a sensing-portion and a third supporting-portion. The sensing-portion is located on the vibrating-portion and has a gap with the vibrating-portion. The third supporting-portion is located on the second supporting-portion, is connected to the sensing-portion, and is connected to the second supporting-portion through a second dielectric material.
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公开(公告)号：US20230382724A1
公开(公告)日：2023-11-30
申请号：US17825225
申请日：2022-05-26
Inventor： Wen-Chuan Tai , Hsiang-Fu Chen , Chia-Ming Hung , I-Hsuan Chiu , Fan Hu
CPC classification number: B81C1/00801 , B81B3/0051 , B81B2203/0127 , B81C2201/053
Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including an interconnect structure overlying a semiconductor substrate. An upper dielectric structure overlies the interconnect structure. A microelectromechanical system (MEMS) substrate overlies the upper dielectric structure. A cavity is defined between the MEMS substrate and the upper dielectric structure. The MEMS substrate comprises a movable membrane over the cavity. A cavity electrode is disposed in the upper dielectric structure and underlies the cavity. A plurality of stopper structures is disposed in the cavity between the movable membrane and the cavity electrode. A dielectric protection layer is disposed along a top surface of the cavity electrode. The dielectric protection layer has a greater dielectric constant than the upper dielectric structure.
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公开(公告)号：US10077188B2
公开(公告)日：2018-09-18
申请号：US15405603
申请日：2017-01-13
Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.
Inventor： Dan Dai , Xinwei Zhang , Guoping Zhou , Changfeng Xia
IPC: B81C1/00
CPC classification number: B81C1/00825 , B81B7/0029 , B81C1/0038 , B81C2201/0167 , B81C2201/053
Abstract: A method of manufacturing a MEMS chip includes: providing a silicon substrate layer, the silicon substrate layer comprising a front surface configured to perform a MEMS process and a rear surface opposite to the front surface; growing a first oxidation layer mainly made of SiO2 on the rear surface of the silicon substrate layer by performing a thermal oxidation process; and depositing a first thin film layer mainly made of silicon nitride on the first oxidation layer by performing a low pressure chemical vapor deposition process.
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公开(公告)号：US20180162131A1
公开(公告)日：2018-06-14
申请号：US15830384
申请日：2017-12-04
Applicant: SEIKO EPSON CORPORATION
Inventor： Tatsuro HOTTA
CPC classification number: B41J2/1607 , B32B9/04 , B32B9/045 , B32B27/42 , B32B37/02 , B32B38/10 , B32B43/006 , B32B2386/00 , B41J2/161 , B41J2/1623 , B41J2/1626 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1642 , B41J2/1646 , B81C1/00047 , B81C1/00055 , B81C2201/053 , B81C2203/0136
Abstract: Disclosed is a peeling method of a cover member including forming a recessed portion that opens one side surface of a substrate, on a region different from a region in which a pattern is formed and forming an opening region including the opening of the recessed portion; attaching the cover member so as to cover the one side surface; adjusting a pressure for increasing a pressure within a space formed by the recessed portion and the cover member by attaching the cover member to the substrate to be higher than a pressure on a side opposite to the space with the cover member interposed therebetween; and peeling off the cover member from the substrate, in a state where the pressure within the space is increased by the adjusting of the pressure.
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公开(公告)号：US20180148319A1
公开(公告)日：2018-05-31
申请号：US15879212
申请日：2018-01-24
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： John Charles Ehmke , Virgil Cotoco Ararao
IPC: B81B7/00
CPC classification number: B81B7/0038 , B81B2203/0315 , B81C1/00269 , B81C1/00285 , B81C1/00293 , B81C2201/0108 , B81C2201/013 , B81C2201/0188 , B81C2201/0198 , B81C2201/053 , B81C2203/0109 , B81C2203/0118 , B81C2203/019 , B81C2203/035 , B82Y30/00 , G02B6/4204 , G02B6/4208 , G02B6/4248 , G02B26/001 , G02B26/0833 , H01L24/03 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/94 , H01L2224/03612 , H01L2224/03614 , H01L2224/039 , H01L2224/04026 , H01L2224/05083 , H01L2224/05109 , H01L2224/05123 , H01L2224/05138 , H01L2224/05163 , H01L2224/05166 , H01L2224/0517 , H01L2224/05562 , H01L2224/27462 , H01L2224/2747 , H01L2224/279 , H01L2224/29006 , H01L2224/29011 , H01L2224/29023 , H01L2224/29109 , H01L2224/29144 , H01L2224/32058 , H01L2224/32227 , H01L2224/83121 , H01L2224/83193 , H01L2224/8381 , H01L2224/83825 , H01L2224/94 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01024 , H01L2924/01074 , H01L2924/1461 , H01L2924/164 , H01L2924/00014 , H01L2924/01049 , H01L2224/03 , H01L2924/01042 , H01L2924/01072 , H01L2924/01004 , H01L2224/83 , H01L2224/0345 , H01L2224/0361 , H01L2224/03462
Abstract: In described examples, a hermetic package of a microelectromechanical system (MEMS) structure includes a substrate having a surface with a MEMS structure of a first height. The substrate is hermetically sealed to a cap forming a cavity over the MEMS structure. The cap is attached to the substrate surface by a vertical stack of metal layers adhering to the substrate surface and to the cap. The stack has a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance. The stack has: a first bottom metal seed film adhering to the substrate and a second bottom metal seed film adhering to the first bottom metal seed film; and a first top metal seed film adhering to the cap and a second top metal seed film adhering to the first top metal seed film.
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Patent Agency Ranking
公开(公告)号：US20180111824A1
公开(公告)日：2018-04-26
申请号：US15333520
申请日：2016-10-25
Inventor： TZU-HENG WU , CHIA-HUA CHU , YI-HENG TSAI , CHENG SAN CHOU , CHEN HSIUNG YANG
CPC classification number: B81B7/008 , B81B2207/096 , B81B2207/115 , B81C1/00246 , B81C2201/053 , B81C2203/0728
Abstract: A semiconductor structure includes a first substrate, a second substrate disposed over the first substrate, and including a first surface, a second surface opposite to the first surface, a via portion extending between the first surface and the second surface, a first through hole and a second through hole, and a device disposed over the second surface, and including a dielectric layer, a backplate at least partially exposed from the dielectric layer and a membrane at least partially exposed from the dielectric layer and disposed between the backplate and the first substrate, wherein the via portion is disposed within the second through hole, and the dielectric layer is bonded with the second substrate, and the device is electrically connected to the first substrate through the via portion.
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公开(公告)号：US09950921B2
公开(公告)日：2018-04-24
申请号：US14930642
申请日：2015-11-02
Applicant: mCube Inc.
Inventor： Te-Hsi “Terrence” Lee , Sudheer S. Sridharamurthy , Shingo Yoneoka , Wenhua Zhang
CPC classification number: B81B7/0022 , B81B3/0086 , B81B2203/0118 , B81B2203/0307 , B81B2207/11 , B81C1/00246 , B81C1/0038 , B81C1/00531 , B81C1/00801 , B81C2201/053
Abstract: An integrated circuit includes a substrate member having a surface region and a CMOS IC layer overlying the surface region. The CMOS IC layer has at least one CMOS device. The integrated circuit also includes a bottom isolation layer overlying the CMOS IC layer, a shielding layer overlying a portion of the bottom isolation layer, and a top isolation layer overlying a portion of the bottom isolation layer. The bottom isolation layer includes an isolation region between the top isolation layer and the shielding layer. The integrated circuit also has a MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer. The MEMS layer includes at least one MEMS structure having at least one movable structure and at least one anchored structure. The at least one anchored structure is coupled to a portion of the top isolation layer, and the at least one movable structure overlies the shielding layer.
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公开(公告)号：US20170313575A1
公开(公告)日：2017-11-02
申请号：US15652920
申请日：2017-07-18
Applicant: Foresee Technology Corp.
Inventor： Chien-Chang CHEN , Yi-Der LIANG , Shiao-Yi LIN , Cheng-Kuang YANG
CPC classification number: B81B3/0054 , B81B3/0078 , B81B2201/0257 , B81B2203/0118 , B81B2203/0127 , B81B2203/0307 , B81B2203/0361 , B81B2207/015 , B81B2207/07 , B81C1/00246 , B81C2201/013 , B81C2201/053 , B81C2203/0714 , B81C2203/0735 , H04R19/005 , H04R19/04
Abstract: The present invention disclosed a micro acoustic collector and CMOS microphone single chip. The micro acoustic collector comprising: a plurality of leaf-shaped structures annularly arranged with symmetry, each of the plurality of leaf-shaped structure having a suspended arm and a restrained arm, and the suspended arm of the plurality of leaf-shaped structures connected to a suspended fulcrum, and a plurality of through-vias formed in the suspended fulcrum and the plurality of leaf-shaped structures; a plurality of support pillars uniformly disposed under edges of the plurality of leaf-shaped structures corresponding to the restrained arms and the suspend arms; and a base metal layer formed under and insulated from the plurality of support pillars, and facing towards the inner-annular-supported acoustic collection film to form a hollow space.
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公开(公告)号：US20170267517A1
公开(公告)日：2017-09-21
申请号：US15250519
申请日：2016-08-29
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Akira FUJIMOTO , Naofumi NAKAMURA , Tamio IKEHASHI
CPC classification number: B81B3/0075 , B81B2201/0221 , B81B2201/0235 , B81B2203/0307 , B81B2203/0315 , B81B2207/015 , B81C1/00293 , B81C1/00674 , B81C2201/0123 , B81C2201/0132 , B81C2201/053 , B81C2203/0136 , B81C2203/0145
Abstract: According to one embodiment, an electronic device includes a base region, an element portion located on the base region, the element portion including a movable portion, and a protective film overlying the element portion and forming a cavity on an inner side of the protective film. The protective film includes a first protective layer and a second protective layer located on the first protective layer. A hole extends in a direction parallel to a main surface of the base region, and the second protective layer covers the hole.
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公开(公告)号：US20170152136A1
公开(公告)日：2017-06-01
申请号：US15429636
申请日：2017-02-10
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： John Charles Ehmke , Virgil Cotoco Ararao
CPC classification number: B81B7/0038 , B81B2203/0315 , B81C1/00269 , B81C1/00285 , B81C1/00293 , B81C2201/0108 , B81C2201/013 , B81C2201/0188 , B81C2201/0198 , B81C2201/053 , B81C2203/0109 , B81C2203/0118 , B81C2203/019 , B81C2203/035 , B82Y30/00 , G02B6/4204 , G02B6/4208 , G02B6/4248 , G02B26/001 , G02B26/0833 , H01L24/03 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/94 , H01L2224/03612 , H01L2224/03614 , H01L2224/039 , H01L2224/04026 , H01L2224/05083 , H01L2224/05109 , H01L2224/05123 , H01L2224/05138 , H01L2224/05163 , H01L2224/05166 , H01L2224/0517 , H01L2224/05562 , H01L2224/27462 , H01L2224/2747 , H01L2224/279 , H01L2224/29006 , H01L2224/29011 , H01L2224/29023 , H01L2224/29109 , H01L2224/29144 , H01L2224/32058 , H01L2224/32227 , H01L2224/83121 , H01L2224/83193 , H01L2224/8381 , H01L2224/83825 , H01L2224/94 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01024 , H01L2924/01074 , H01L2924/1461 , H01L2924/164 , H01L2924/00014 , H01L2924/01049 , H01L2224/03 , H01L2924/01042 , H01L2924/01072 , H01L2924/01004 , H01L2224/83 , H01L2224/0345 , H01L2224/0361 , H01L2224/03462
Abstract: In described examples, a hermetic package of a microelectromechanical system (MEMS) structure includes a substrate having a surface with a MEMS structure of a first height. The substrate is hermetically sealed to a cap forming a cavity over the MEMS structure. The cap is attached to the substrate surface by a vertical stack of metal layers adhering to the substrate surface and to the cap. The stack has a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance. The stack has: a first bottom metal seed film adhering to the substrate and a second bottom metal seed film adhering to the first bottom metal seed film; and a first top metal seed film adhering to the cap and a second top metal seed film adhering to the first top metal seed film.
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