公开(公告)号：US10090153B2

公开(公告)日：2018-10-02

申请号：US15598763

申请日：2017-05-18

Applicant: Ultratech, Inc.

Inventor： Andrew M. Hawryluk ,  Ganesh Sundaram ,  Ritwik Bhatia

IPC: H01L21/20 ,  H01L21/36 ,  H01L33/00 ,  H01L21/02 ,  H01L21/268 ,  B23K26/12 ,  H01L29/20 ,  B23K26/03 ,  B23K26/073 ,  B23K26/122 ,  C23C16/56 ,  H01L21/324 ,  C23C16/22 ,  B23K103/00

Abstract: Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

公开(公告)号：US10083843B2

公开(公告)日：2018-09-25

申请号：US14941712

申请日：2015-11-16

Applicant: Ultratech, Inc.

Inventor： Andrew M. Hawryluk ,  Serguei Anikitchev

IPC: H01L21/324 ,  H01L21/67 ,  H01L21/268

CPC classification number: H01L21/324 ,  H01L21/268 ,  H01L21/67115 ,  H01L21/67248

Abstract: Laser annealing systems and methods with ultra-short dwell times are disclosed. The method includes locally pre-heating the wafer with a pre-heat line image and then rapidly scanning an annealing image relative to the pre-heat line image to define a scanning overlap region that has a dwell time is in the range from 10 ns to 500 ns. These ultra-short dwell times are useful for performing surface or subsurface melt annealing of product wafers because they prevent the device structures from reflowing.

公开(公告)号：US20180226241A1

公开(公告)日：2018-08-09

申请号：US15943115

申请日：2018-04-02

Applicant: Ultratech, Inc.

Inventor： Ganesh Sundaram ,  Andrew M. Hawryluk ,  Daniel Stearns

IPC: H01L21/02 ,  H01L29/20 ,  H01L21/324 ,  C30B25/18 ,  C30B29/40 ,  C30B29/06

CPC classification number: H01L21/0251 ,  C23C16/303 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/46 ,  C23C16/56 ,  C30B25/02 ,  C30B25/183 ,  C30B29/06 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02694 ,  H01L21/3245 ,  H01L29/2003

Abstract: Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably matched to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layer after deposition by ALD. In preferred embodiments, a silicon substrate is overlaid with an AlN nucleation layer and laser annealed. Thereafter a GaN device layer is applied over the AlN layer by an ALD process and then laser annealed. In a further example embodiment, a transition layer is applied between the GaN device layer and the AlN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-xN compound wherein the composition of the transition layer is continuously varied from AlN to GaN.

公开(公告)号：US20180216229A1

公开(公告)日：2018-08-02

申请号：US15877809

申请日：2018-01-23

Applicant: Ultratech, Inc.

Inventor： Michael J. Sershen ,  Adam Bertuch

IPC: C23C16/455 ,  H01L21/683 ,  H01L21/285 ,  B33Y10/00 ,  C23C16/458

Abstract: A chuck system for performing a substrate-biased atomic layer deposition process that forms an electrically conductive film on a substrate includes an electrically conductive substrate holder configured to support the substrate and an electrically conductive base that supports the substrate holder. An electrical isolating layer is sandwiched between the substrate holder and the base. The electrical isolating layer has an outer end and an edge recess formed in and that runs around the outer edge. The edge recess is configured to prevent the electrically conductive film from coating the entire interior of the edge recess, thereby maintaining electrical isolation between the substrate holder and the base.

公开(公告)号：US20180166314A1

公开(公告)日：2018-06-14

申请号：US15834718

申请日：2017-12-07

Applicant: Ultratech, Inc.

Inventor： Raymond Ellis ,  A.J. Crespin ,  Konrad Heinle ,  Charles Hu

IPC: H01L21/683 ,  H01L21/687

CPC classification number: H01L21/6838 ,  H01L21/67126 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/6875

Abstract: A wafer chuck apparatus includes a chuck with a body and a vacuum line system formed within the body. The wafer chuck apparatus has sealing devices each operably disposed in respective recesses formed in the body at an upper surface of the chuck. Each sealing device is contractible between an expanded operating position and a contracted operating position. The top end of each sealing device is configured to form a vacuum seal with a corresponding portion of a backside of a wafer. The sealing devices extend above the upper surface of the chuck higher than typical seals and guide the wafer down to the upper surface of the chuck where it can be engaged by vacuum features that chuck the wafer to the upper surface of the chuck. The sealing devices are particularly useful for chucking warped wafers.

公开(公告)号：US20180122681A1

公开(公告)日：2018-05-03

申请号：US15729877

申请日：2017-10-11

Applicant: Ultratech, Inc.

Inventor： Raymond Ellis ,  A.J. Crespin

IPC: H01L21/683 ,  H01L21/687

CPC classification number: H01L21/6838 ,  B23B31/307 ,  H01L21/67288 ,  H01L21/68742 ,  H01L21/6875 ,  Y10T279/11

Abstract: The wafer chuck apparatus has a chuck body that includes an interior and a top surface. A plurality of micro-channel regions is formed in the top surface. Each micro-channel region is defined by an array of micro-channel sections that are in pneumatic communication with each other. The micro-channel regions are pneumatically isolated from each other. One or more vacuum manifold regions are defined in the chuck body interior and are in pneumatic communication with corresponding micro-channel regions through respective vacuum holes. The configuration of the micro-channel regions makes the wafer chuck apparatus particularly useful in chucking wafers that have a substantial amount of warp.

公开(公告)号：US09784570B2

公开(公告)日：2017-10-10

申请号：US15152907

申请日：2016-05-12

Applicant: Ultratech, Inc.

Inventor： David G. Stites

IPC: G01B9/02 ,  G01B11/24

CPC classification number: G01B11/2441 ,  G01B9/02098 ,  G01B2290/30 ,  G01B2290/45 ,  G01B2290/70

Abstract: Polarization-based coherent gradient-sensing systems and methods for measuring at least one surface-shape property of a specularly reflective surface are disclosed. The method includes: reflecting a first circularly polarized laser beam from a sample surface to form a second circularly polarized laser beam that contains surface-shape information; converting the second circularly polarized laser beam to a linearly polarized reflected laser beam; directing respective first and second portions of the linearly polarized reflected laser beam to first and second relay assemblies that constitute first and second interferometer arms. The first and second relay assemblies each use a pair of axially spaced-apart gratings to generate respective first and second interference patterns at respective first and second image sensors. Respective first and second signals from the first and second image sensors are processed to determine the at least one surface-shape property.

公开(公告)号：US20170256394A1

公开(公告)日：2017-09-07

申请号：US15598763

申请日：2017-05-18

Applicant: Ultratech, Inc.

Inventor： Andrew M. Hawryluk ,  Ganesh Sundaram ,  Ritwik Bhatia

IPC: H01L21/02 ,  B23K26/03 ,  B23K26/073 ,  B23K26/12 ,  B23K26/122 ,  H01L21/268 ,  H01L29/20

CPC classification number: H01L21/0262 ,  B23K26/034 ,  B23K26/0738 ,  B23K26/122 ,  B23K26/1224 ,  B23K2103/56 ,  C23C16/22 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02675 ,  H01L21/02694 ,  H01L21/268 ,  H01L21/3245 ,  H01L29/2003

Abstract: Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

公开(公告)号：US09613828B2

公开(公告)日：2017-04-04

申请号：US14714544

申请日：2015-05-18

Applicant: Ultratech, Inc.

Inventor： James McWhirter ,  Arthur W. Zafiropoulo

IPC: H01L21/00 ,  H01L21/84 ,  H01L21/31 ,  H01L21/324 ,  H01L21/268

CPC classification number: H01L21/324 ,  H01L21/268

Abstract: Laser annealing of a semiconductor wafers using a forming gas for localized control of ambient oxygen gas to reduce the amount of oxidization during laser annealing is disclosed. The forming gas includes hydrogen gas and an inert buffer gas such as nitrogen gas. The localized heating of the oxygen gas and the forming gas in the vicinity of the annealing location on the surface of the semiconductor wafer creates a localized region within which combustion of oxygen gas and hydrogen gas occurs to generate water vapor. This combustion reaction reduces the oxygen gas concentration within the localized region, thereby locally reducing the amount of ambient oxygen gas, which in turn reduces oxidation rate at the surface of the semiconductor wafer during the annealing process.

公开(公告)号：US09567670B2

公开(公告)日：2017-02-14

申请号：US14584034

申请日：2014-12-29

Applicant: Ultratech, Inc.

Inventor： Michael J. Sershen ,  Ganesh M. Sundaram ,  Roger R. Coutu ,  Jill Svenja Becker ,  Mark J. Dalberth

IPC: C23C16/00 ,  C23C16/455 ,  C23C16/54 ,  C23C16/453 ,  C23C16/458 ,  C23C16/44

CPC classification number: C23C16/45574 ,  C23C16/4412 ,  C23C16/453 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/4584 ,  C23C16/545

Abstract: An ALD coating method to provide a coating surface on a substrate is provided. The ALD coating method comprises: providing a deposition heading including a unit cell having a first precursor nozzle assembly and a second precursor nozzle assembly; emitting a first precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; emitting a second precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; removing moving the substrate under the deposition head such that the first precursor is directed onto a first area of the coating surface prior to the second precursor being directed onto the first area of the coating surface.

Abstract translation: 提供了一种在基板上提供涂层表面的ALD涂覆方法。 ALD涂覆方法包括：提供包括具有第一前体喷嘴组件和第二前体喷嘴组件的单元的沉积标题; 在大气条件下沿基本上垂直于涂层表面的方向将第一前体从第一前体喷嘴组件发射到室中; 在大气条件下沿基本上垂直于涂层表面的方向将第二前体从第一前体喷嘴组件发射到室中; 去除在沉积头下方移动衬底，使得第一前体在第二前体被引导到涂层表面的第一区域之前被引导到涂层表面的第一区域上。