公开(公告)号：US20220020570A1

公开(公告)日：2022-01-20

申请号：US16932794

申请日：2020-07-19

Applicant: Applied Materials, Inc.

Inventor： Sai Susmita Addepalli ,  Yue Chen ,  Abhigyan Keshri ,  Qiang Ma ,  Zhijun Jiang ,  Shailendra Srivastava ,  Daemian Raj Benjamin Raj ,  Ganesh Balasubramanian

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/40 ,  C23C16/44

Abstract: Exemplary semiconductor processing systems may include a processing chamber including a lid stack having an output manifold. The systems may include a gas panel. The systems may include an input manifold. The input manifold may fluidly couple the gas panel with the output manifold of the processing chamber. A delivery line may extend from the input manifold to the output manifold. The systems may include a first transmission line extending from a first set of precursor sources of the gas panel to the delivery line. The systems may include a second transmission line extending from a second set of precursor sources of the gas panel to the delivery line. The second transmission line may be switchably coupled between the delivery line and an exhaust of the semiconductor processing system.

公开(公告)号：US11031262B2

公开(公告)日：2021-06-08

申请号：US16838128

申请日：2020-04-02

Applicant: Applied Materials, Inc.

Inventor： Saptarshi Basu ,  Jeongmin Lee ,  Paul Connors ,  Dale R. Du Bois ,  Prashant Kumar Kulshreshtha ,  Karthik Thimmavajjula Narasimha ,  Brett Berens ,  Kalyanjit Ghosh ,  Jianhua Zhou ,  Ganesh Balasubramanian ,  Kwangduk Douglas Lee ,  Juan Carlos Rocha-Alvarez ,  Hiroyuki Ogiso ,  Liliya Krivulina ,  Rick Gilbert ,  Mohsin Waqar ,  Venkatanarayana Shankaramurthy ,  Hari K. Ponnekanti

IPC: C23C16/40 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

公开(公告)号：US10971390B2

公开(公告)日：2021-04-06

申请号：US16437048

申请日：2019-06-11

Applicant: Applied Materials, Inc.

Inventor： Abdul Aziz Khaja ,  Liangfa Hu ,  Sudha S. Rathi ,  Ganesh Balasubramanian

IPC: H01L21/687 ,  H01L21/67

Abstract: The present disclosure generally relates to substrate supports for semiconductor processing. In one embodiment, a substrate support is provided. The substrate support includes a body comprising a substrate chucking surface, an electrode disposed within the body, a plurality of substrate supporting features formed on the substrate chucking surface, wherein the number of substrate supporting features increases radially from a center of the substrate chucking surface to an edge of the substrate chucking surface, and a seasoning layer formed on the plurality of the substrate supporting features, the seasoning layer comprising a silicon nitride.

公开(公告)号：US10403515B2

公开(公告)日：2019-09-03

申请号：US15013547

申请日：2016-02-02

Applicant: Applied Materials, Inc.

Inventor： Saptarshi Basu ,  Jeongmin Lee ,  Paul Connors ,  Dale R. Du Bois ,  Prashant Kumar Kulshreshtha ,  Karthik Thimmavajjula Narasimha ,  Brett Berens ,  Kalyanjit Ghosh ,  Jianhua Zhou ,  Ganesh Balasubramanian ,  Kwangduk Douglas Lee ,  Juan Carlos Rocha-Alvarez ,  Hiroyuki Ogiso ,  Liliya Krivulina ,  Rick Gilbert ,  Mohsin Waqar ,  Venkatanarayana Shankaramurthy ,  Hari K. Ponnekanti

IPC: C23C16/40 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

公开(公告)号：US10373822B2

公开(公告)日：2019-08-06

申请号：US15816520

申请日：2017-11-17

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Sudha Rathi ,  Praket P. Jha ,  Saptarshi Basu ,  Kwangduk Douglas Lee ,  Martin J. Seamons ,  Bok Hoen Kim ,  Ganesh Balasubramanian ,  Ziqing Duan ,  Lei Jing ,  Mandar B. Pandit

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/033 ,  H01L21/66 ,  C23C16/26 ,  C23C16/04 ,  H01L21/311

Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

公开(公告)号：US10325799B2

公开(公告)日：2019-06-18

申请号：US14875392

申请日：2015-10-05

Applicant: Applied Materials, Inc.

Inventor： Dale R. Du Bois ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja ,  Ganesh Balasubramanian ,  Lipyeow Yap ,  Jianhua Zhou ,  Thomas Nowak

IPC: B05C13/00 ,  H01L21/68 ,  C23C16/458 ,  H01J37/32 ,  H01L21/687 ,  H01L21/324 ,  H01L21/67

Abstract: A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

公开(公告)号：US09593419B2

公开(公告)日：2017-03-14

申请号：US14632648

申请日：2015-02-26

Applicant: Applied Materials, Inc.

Inventor： Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Ramprakash Sankarakrishnan ,  Robert Kim ,  Dale R. Du Bois ,  Kirby Hane Floyd ,  Amit Kumar Bansal ,  Tuan Anh Nguyen

IPC: H01L21/02 ,  H01L21/687 ,  C23C16/458 ,  C23C16/509 ,  H01J37/32

CPC classification number: H01L21/02274 ,  C23C16/4584 ,  C23C16/4585 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32568 ,  H01J37/32623 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32743 ,  H01J2237/3321 ,  H01L21/67103 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68792

Abstract: A method and apparatus for processing a substrate are provided. The apparatus includes a pedestal and rotation member, both of which are moveably disposed within a processing chamber. The rotation member is adapted to rotate a substrate disposed in the chamber. The substrate may be supported by an edge ring during processing. The edge ring may selectively engage either the pedestal or the rotation member. In one embodiment, the edge ring engages the pedestal during a deposition process and the edge ring engages the rotation member during rotation of the substrate. The rotation of the substrate during processing may be discrete or continuous.

Abstract translation: 提供了一种用于处理衬底的方法和设备。 该装置包括基座和旋转构件，两者都可移动地设置在处理室内。 旋转构件适于旋转设置在腔室中的衬底。 衬底可以在加工过程中被边缘环支撑。 边缘环可以选择性地接合基座或旋转构件。 在一个实施例中，边缘环在沉积工艺期间接合基座，并且边缘环在基底旋转期间接合旋转构件。 处理过程中衬底的旋转可以是离散的或连续的。

公开(公告)号：US09390910B2

公开(公告)日：2016-07-12

申请号：US14549380

申请日：2014-11-20

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Sudha Rathi ,  Praket P. Jha ,  Saptarshi Basu ,  Kwangduk Douglas Lee ,  Martin J. Seamons ,  Bok Hoen Kim ,  Ganesh Balasubramanian ,  Ziqing Duan ,  Lei Jing ,  Mandar B. Pandit

IPC: H01L21/443 ,  H01L21/02 ,  H01L21/66 ,  H01L21/033 ,  C23C16/458 ,  C23C16/46 ,  C23C16/455

CPC classification number: H01L21/02274 ,  C23C16/04 ,  C23C16/26 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/02115 ,  H01L21/0337 ,  H01L21/31144 ,  H01L22/12

Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

Abstract translation: 用于调制一个或多个图案化膜的局部应力和覆盖误差的方法可以包括调节引入室主体的气体的气流分布，将腔体内的气体朝向衬底流动，旋转衬底， 通过使用双区加热器控制基板温度，来实现基板的边缘温度分布。 用于沉积膜的室可以包括包括一个或多个处理区域的室主体。 腔室主体可以包括气体分配组件，其具有用于将气体输送到一个或多个处理区域中的阻挡板。 阻挡板可以具有第一区域和第二区域，并且第一区域和第二区域各自可以具有多个孔。 腔体可以具有双区加热器。

公开(公告)号：US09206511B2

公开(公告)日：2015-12-08

申请号：US14087671

申请日：2013-11-22

Applicant: Applied Materials, Inc.

Inventor： Ramprakash Sankarakrishnan ,  Dale R. Du Bois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

IPC: C23C16/00 ,  C23C16/44 ,  F16K31/08 ,  B08B5/00 ,  C23C16/455 ,  B08B7/00 ,  F16K31/06

CPC classification number: F16K31/0655 ,  B08B5/00 ,  B08B7/0021 ,  C23C16/4405 ,  C23C16/4409 ,  C23C16/45561 ,  F16K1/221 ,  F16K1/224 ,  F16K31/06 ,  F16K31/088 ,  Y10S438/905

Abstract: A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

Abstract translation: 提供了一种用于清洁处理室的方法和设备。 在一个实施例中，提供了包括远程等离子体源和具有至少两个处理区域的处理室的处理室。 每个处理区域包括设置在处理区域中的基板支撑组件，配置成将气体提供到基板支撑组件上方的处理区域中的气体分配系统，以及构造成将气体提供到基板支撑组件下方的处理区域中的气体通道。 第一气体管道构造成使来自远程等离子体源的清洁剂通过每个处理区域中的气体分配组件流动，而第二气体管道构造成将一部分清洁剂从第一气体导管转移到第一气体导管的气体通道 每个处理区域。

公开(公告)号：US20140263165A1

公开(公告)日：2014-09-18

申请号：US14202763

申请日：2014-03-10

Applicant: Applied Materials, Inc.

Inventor： Steve S. Hongkham ,  Paul B. Reuter ,  Eric A. Englhardt ,  Ganesh Balasubramanian ,  Xinglong Chen ,  JuanCarlos Rocha-Alvarez

IPC: B01J19/00

CPC classification number: H01L21/67184 ,  Y10T137/0318 ,  Y10T137/86187

Abstract: A via pass-through apparatus is disclosed. The via pass-through apparatus includes a pass-through chamber adapted to couple between a first mainframe section and a second mainframe section of a substrate processing system, the pass-through chamber including an entry and an exit each having a slit valve, and a via process chamber located at a different level than the pass-through chamber wherein the via process chamber is adapted to carry out a process on a substrate at the via location. Systems and methods of operating the system are provided, as are numerous other aspects.

Abstract translation: 公开了一种通孔传送装置。 通孔穿通装置包括适于联接在基板处理系统的第一主机部分和第二主机部分之间的通过室，所述通过室包括每个具有狭缝阀的入口和出口，以及 通过处理室位于与通过室不同的水平，其中通孔处理室适于在通孔位置处在基板上执行处理。 提供了操作系统的系统和方法，以及许多其它方面。