公开(公告)号：US20160181041A1

公开(公告)日：2016-06-23

申请号：US14977488

申请日：2015-12-21

Applicant: DELFMEMS SAS

Inventor： Anne-Sophie Rollier ,  Antoine Bonnabel ,  Karim Segueni

IPC: H01H59/00 ,  B81B3/00 ,  H01H49/00 ,  B81C1/00

CPC classification number: H01H59/0009 ,  B81B3/0051 ,  B81B2201/018 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C2201/013 ,  H01H49/00 ,  H01H2059/0027 ,  H01H2059/0036 ,  H01H2227/004

Abstract: The present invention relates to a method of manufacturing an MEMS device that comprises the steps of forming a first membrane layer over a sacrificial base layer, forming a second membrane layer over the first membrane layer, wherein the second membrane layer comprises lateral recesses exposing lateral portions of the first membrane layer and forming stoppers to restrict movement of the first membrane layer. Moreover, it is provided MEMS device comprising a movable membrane comprising a first membrane layer and a second membrane layer formed over the first membrane layer, wherein the second membrane layer comprises lateral recesses exposing lateral portions of the first membrane layer.

Abstract translation: 本发明涉及一种制造MEMS器件的方法，该方法包括以下步骤：在牺牲基底层上形成第一膜层，在第一膜层上形成第二膜层，其中第二膜层包括暴露侧向部分 的第一膜层并形成止挡件以限制第一膜层的运动。 此外，提供了包括可移动膜的MEMS装置，其包括形成在第一膜层上的第一膜层和第二膜层，其中第二膜层包括暴露第一膜层侧向部分的侧向凹部。

公开(公告)号：US20160181040A1

公开(公告)日：2016-06-23

申请号：US14977483

申请日：2015-12-21

Applicant: DELFMEMS SAS

Inventor： Renaud Robin ,  Nicolas Lorphelin ,  Karim Segueni

IPC: H01H59/00 ,  B81B3/00 ,  H01H49/00 ,  B81C1/00

CPC classification number: H01H59/0009 ,  B81B3/0086 ,  B81B2201/018 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C2201/0188 ,  H01H49/00 ,  H01H2059/0027 ,  H01H2059/0036 ,  H01H2227/004

Abstract: Systems and methods for a MEMS device, in particular, a MEMS switch, and the manufacture thereof are provided. In one example, said MEMS device comprises posts and a conduction (transmission) line formed over a substrate and a membrane over the posts and the conduction line. The membrane comprises a first membrane layer and a second membrane layer formed over the first membrane layer in a region over one of the posts and/or a region over the conduction line such that the first membrane layer has a region where the second membrane layer is not formed adjacent to the region where the second membrane layer is formed.

Abstract translation: 提供了用于MEMS器件，特别是MEMS开关的系统和方法及其制造。 在一个示例中，所述MEMS器件包括柱和在衬底上形成的导电（透射）线，并且在柱和导电线上形成膜。 所述膜包括第一膜层和第二膜层，所述第一膜层和所述第二膜层形成在所述第一膜上方的所述柱中的一个区域上和/或所述导电线上的区域中，使得所述第一膜层具有第二膜层 不与形成有第二膜层的区域相邻地形成。

公开(公告)号：US20150266718A1

公开(公告)日：2015-09-24

申请号：US14730346

申请日：2015-06-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jeffrey C. Maling ,  Anthony K. Stamper ,  Dana R. DeReus ,  Arthur S. Morris, III

IPC: B81B3/00

CPC classification number: B81B3/0072 ,  B81B2201/018 ,  B81B2203/0118 ,  B81C1/00333 ,  B81C1/00825 ,  B81C2203/0136 ,  B81C2203/0145 ,  H01H1/0036 ,  H01L23/34 ,  H01L29/84 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity. The method for forming the cavity further includes forming at least one first vent hole of a first dimension which is sized to avoid or minimize material deposition on a beam structure during sealing processes. The method for forming the cavity further includes forming at least one second vent hole of a second dimension, larger than the first dimension.

Abstract translation: 公开了微机电系统（MEMS）结构，制造方法和设计结构。 该方法包括形成至少一个微机电系统（MEMS）腔。 用于形成空腔的方法还包括形成至少一个第一尺寸的第一通气孔，其尺寸设计成在密封过程中避免或最小化在梁结构上的材料沉积。 形成空腔的方法还包括形成大于第一尺寸的第二尺寸的至少一个第二通气孔。

公开(公告)号：US20150217990A1

公开(公告)日：2015-08-06

申请号：US14607714

申请日：2015-01-28

Applicant: STMicroelectronics S.r.l.

Inventor： Roberto Carminati ,  Sebastiano Conti

IPC: B81B3/00 ,  G03B21/14 ,  G03B21/20 ,  G03B21/28

CPC classification number: B81B3/0062 ,  B81B3/0043 ,  B81B7/008 ,  B81B2201/018 ,  B81B2201/033 ,  B81B2201/042 ,  B81B2201/045 ,  B81B2203/058 ,  G02B26/0841 ,  G03B21/142 ,  G03B21/2033 ,  G03B21/28

Abstract: The MEMS device has a suspended mass supported via a pair of articulation arms by a supporting region. An electrostatic driving system, coupled to the articulation arms, has mobile electrodes and fixed electrodes that are coupled to each other. The electrostatic driving system is formed by two pairs of actuation assemblies, arranged on opposite sides of a respective articulation arm and connected to the articulation arm through connection elements. Each actuation assembly extends laterally to the suspended mass and has an auxiliary arm carrying a respective plurality of mobile electrodes. Each auxiliary arm is parallel to the articulation arms. The connection elements may be rigid or formed by linkages.

Abstract translation: MEMS器件具有通过支撑区域经由一对关节臂支撑的悬挂质量。 耦合到关节臂的静电驱动系统具有彼此耦合的移动电极和固定电极。 静电驱动系统由两对致动组件形成，这两对致动组件布置在相应的关节臂的相对侧上，并通过连接元件连接到关节臂上。 每个致动组件横向延伸到悬挂质量块，并具有一个载有相应多个移动电极的辅助臂。 每个辅助臂平行于铰接臂。 连接元件可以是刚性的或通过连杆形成。

公开(公告)号：US20150129399A1

公开(公告)日：2015-05-14

申请号：US13981954

申请日：2012-07-31

Applicant: Kadoor Microelectronics Ltd.

Inventor： Shai Feldman ,  Oren Aharon

IPC: H01H29/06

CPC classification number: H01H29/06 ,  B81B2201/018 ,  B81C1/00333 ,  B81C1/00341 ,  B81C2203/0136 ,  B81C2203/0145 ,  H01H29/00 ,  H01H2029/008 ,  H01H2203/028

Abstract: Devices for switching or tuning of an electrical circuit comprise a liquid metal (LM) drop confined inside a sealed cavity. The cavity is formed at least partially inside a microelectronics layered structure which includes metal, dielectric and semiconductor layers. The microelectronics layered structure may be prepared using a VLSI/CMOS technology. Some of the VLSI/CMOS metal layers or metalized vias may be used for conduction lines contacted by the LM drop or as RF transmission lines opened or closed by the LM drop.

Abstract translation: 用于切换或调谐电路的装置包括限定在密封空腔内的液态金属（LM）液滴。 空腔至少部分地形成在包括金属，电介质和半导体层的微电子分层结构内部。 微电子分层结构可以使用VLSI / CMOS技术来制备。 VLSI / CMOS金属层或金属化通孔中的一些可以用于与LM压降接触的导线，或者作为由LM压降打开或闭合的RF传输线。

公开(公告)号：US20140360851A1

公开(公告)日：2014-12-11

申请号：US14286331

申请日：2014-05-23

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Christian Rivero ,  Pascal Fornara ,  Antonio di-Giacomo ,  Brice Arrazat

IPC: H01H59/00 ,  H01L21/822 ,  H01L27/06

CPC classification number: H01H59/0009 ,  B81B2201/018 ,  B81C1/00246 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01H1/0036 ,  H01H57/00 ,  H01H2001/0068 ,  H01H2001/0078 ,  H01H2059/0054 ,  H01L21/8221 ,  H01L23/522 ,  H01L27/0617 ,  H01L27/0688 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit includes an interconnection part with several metallization levels. An electrically activatable switching device within the interconnection part has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.

Abstract translation: 集成电路包括具有多个金属化级别的互连部件。 互连部件内的可电激活的开关装置具有包括由结构保持的梁的组件。 梁和结构位于相同的金属化水平内。 布置结构在梁上的固定位置，以便为梁定义位于这些固定位置之间的枢转点。 该结构在不存在电位差的情况下相对于光束和垂直于光束的平面基本对称。 在存在施加在结构的第一部分之间的第一电位差并且在存在施加在结构的第二部分之间的第二电位差的情况下在第二方向上枢转时，梁能够在第一方向上枢转。

公开(公告)号：US20140285252A1

公开(公告)日：2014-09-25

申请号：US14144095

申请日：2013-12-30

Applicant: Huawei Device Co., Ltd.

Inventor： Xiong Yang ,  Bocheng Cao ,  Lei Wang

IPC: H01H21/18 ,  H01H11/00

CPC classification number: B81B3/0072 ,  B81B3/001 ,  B81B2201/014 ,  B81B2201/018 ,  H01G5/16 ,  H01H59/0009

Abstract: A capacitive switch includes: a first conductive cantilever, a second conductive cantilever, a substrate, a coplanar waveguide arranged on the substrate, the coplanar waveguide includes a first conductor configured to transmit an electrical signal, a second conductor and a third conductor are arranged as ground wires on two sides of the first conductor; an insulation medium layer is arranged on the first conductor, a conducting layer is arranged on the insulation medium layer; the first conductive cantilever is connected to the second conductor by using a first fixed end, the second conductive cantilever is connected to the third conductor by using a second fixed end; when a direct-current signal is transmitted on the capacitive switch, a first free end of the first conductive cantilever and a second free end of the second conductive cantilever contact the conducting layer.

Abstract translation: 电容开关包括：第一导电悬臂，第二导电悬臂，衬底，布置在衬底上的共面波导，共面波导包括被配置为传输电信号的第一导体，第二导​​体和第三导体被布置为 第一导体两侧接地线; 绝缘介质层布置在第一导体上，导电层设置在绝缘介质层上; 第一导电悬臂通过使用第一固定端连接到第二导体，第二导​​电悬臂通过使用第二固定端连接到第三导体; 当在电容性开关上传输直流信号时，第一导电悬臂的第一自由端和第二导电悬臂的第二自由端接触导电层。

公开(公告)号：US08685777B2

公开(公告)日：2014-04-01

申请号：US13176371

申请日：2011-07-05

Applicant: Christel Dieppedale ,  Stephan Borel ,  Bruno Reig ,  Henri Sibuet

Inventor： Christel Dieppedale ,  Stephan Borel ,  Bruno Reig ,  Henri Sibuet

IPC: H01L21/02 ,  B81C1/00 ,  H01H1/00

CPC classification number: B81C1/00158 ,  B81B2201/018 ,  B81B2201/0264 ,  B81B2203/0118 ,  B81B2203/0361 ,  B81C1/00492 ,  B81C2201/0178 ,  H01H1/0036

Abstract: The fabrication of a semiconductor fixed structure defining a volume, for example of a MEMS micro electro-mechanical system includes, determining thicknesses beforehand depending on the functional distances associated with elements. At least one element is formed on a substrate by thermal oxidation of the substrate so as to form an oxide layer followed by selective etching of the oxide layer so as to define the volume in an etched portion by baring the underlying substrate so as to define the element in an unetched portion, and later oxidation of the substrate so as to form an oxide layer, in order to obtain the elements at the functional distances.

Abstract translation: 限定体积的半导体固定结构（例如MEMS微机电系统）的制造包括：根据与元件相关联的功能距离预先确定厚度。 通过衬底的热氧化在衬底上形成至少一个元件，以便形成氧化物层，然后选择性地蚀刻氧化物层，以便通过掩埋下面的衬底限定蚀刻部分中的体积，从而限定 元素在未蚀刻部分中，并且随后氧化基底以形成氧化物层，以便在功能距离处获得元件。

公开(公告)号：US20140077371A1

公开(公告)日：2014-03-20

申请号：US13826912

申请日：2013-03-14

Applicant: DONGBU HITEK CO., LTD.

Inventor： Seong Hun JEONG ,  Ki Jun YUN ,  Oh Jin JUNG

IPC: H01L29/40 ,  H01L29/41

CPC classification number: H01L29/401 ,  B81B2201/018 ,  B81B2203/04 ,  B81C1/00166 ,  H01L29/41

Abstract: A method of manufacturing a semiconductor device including at least one of the following steps: (1) Forming a plurality of lower electrodes over a substrate. (2) Forming a first stop film over the lower electrodes. (3) Forming a filling layer over the first stop film. (4) Forming a second stop film over the filling layer. (5) Forming a first interlayer insulating layer over the second stop film. (6) Forming a plurality of upper electrodes over the first interlayer insulating layer. (7) Forming a second interlayer insulating layer over the upper electrodes. (8) Etching the second interlayer insulating layer and the first interlayer insulating layer to form a cavity. (9) Forming a contact ball in the cavity.

Abstract translation: 一种制造半导体器件的方法，包括以下步骤中的至少一个：（1）在衬底上形成多个下电极。 （2）在下电极上形成第一停止膜。 （3）在第一止挡膜上形成填充层。 （4）在填充层上形成第二停止膜。 （5）在第二止挡膜上形成第一层间绝缘层。 （6）在第一层间绝缘层上形成多个上电极。 （7）在上电极上形成第二层间绝缘层。 （8）蚀刻第二层间绝缘层和第一层间绝缘层以形成空腔。 （9）在空腔中形成接触球。

公开(公告)号：US20130032453A1

公开(公告)日：2013-02-07

申请号：US13565693

申请日：2012-08-02

Applicant: Brian I. Troy ,  Mickael Renault ,  Thomas L. Maguire ,  Joseph Damian Gordon Lacey ,  James F. Bobey

Inventor： Brian I. Troy ,  Mickael Renault ,  Thomas L. Maguire ,  Joseph Damian Gordon Lacey ,  James F. Bobey

IPC: H01H59/00 ,  H01H65/00

CPC classification number: B81C1/00484 ,  B81B3/0008 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81C2201/0108 ,  H01H1/0036 ,  H01H2001/0089

Abstract: The present invention generally relates to a MEMS device in which silicon residues from the adhesion promoter material are reduced or even eliminated from the cavity floor. The adhesion promoter is typically used to adhere sacrificial material to material above the substrate. The adhesion promoter is the removed along with then sacrificial material. However, the adhesion promoter leaves silicon based residues within the cavity upon removal. The inventors have discovered that the adhesion promoter can be removed from the cavity area prior to depositing the sacrificial material. The adhesion promoter which remains over the remainder of the substrate is sufficient to adhere the sacrificial material to the substrate without fear of the sacrificial material delaminating. Because no adhesion promoter is used in the cavity area of the device, no silicon residues will be present within the cavity after the switching element of the MEMS device is freed.

Abstract translation: 本发明一般涉及一种MEMS器件，其中来自粘合促进剂材料的硅残余物从空腔底板减少甚至消除。 粘合促进剂通常用于将牺牲材料粘附到衬底上方的材料上。 粘附促进剂与牺牲材料一起被去除。 然而，粘合促进剂在去除时将硅基残留物留在空腔内。 发明人已经发现，在沉积牺牲材料之前，可以从空腔区域去除粘合促进剂。 保留在基材的其余部分上的粘合促进剂足以将牺牲材料粘附到基材上，而不用担心牺牲材料分层。 因为在器件的空腔区域中没有使用粘合促进剂，所以在MEMS器件的开关元件被释放之后，腔内将不存在硅残余物。