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    CMOS-MEMS-CMOS PLATFORM
    91.
    发明申请
    CMOS-MEMS-CMOS PLATFORM 有权
    CMOS-MEMS-CMOS平台

    公开(公告)号：US20160362293A1

    公开(公告)日：2016-12-15

    申请号：US14738745

    申请日：2015-06-12

    Applicant: InvenSense, Inc.

    Inventor： Peter SMEYS ,  Martin LIM

    IPC: B81B7/00

    CPC classification number: B81B7/007 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/0278 ,  B81B2203/0315 ,  B81B2207/012 ,  B81C1/00238 ,  B81C2203/0785 ,  B81C2203/0792 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/00012

    Abstract: A sensor chip combining a substrate comprising at least one CMOS circuit, a MEMS substrate and another substrate comprising at least one CMOS circuit in one package that is vertically stacked is disclosed. The package comprises a sensor chip further comprising a first substrate with a first surface and a second surface comprising at least one CMOS circuit; a MEMS substrate with a first surface and a second surface; and a second substrate comprising at least one CMOS circuit. Where the first surface of the first substrate is attached to a packaging substrate and the second surface of the first substrate is attached to the first surface of the MEMS substrate. The second surface of the MEMS substrate is attached to the second substrate. The first substrate, the MEMS substrate, the second substrate and the packaging substrate are mechanically attached and provided with electrical inter-connects.

    Abstract translation: 公开了一种传感器芯片，其组合包括至少一个CMOS电路，MEMS基板和包括垂直堆叠的一个封装中的至少一个CMOS电路的另一基板的基板。 所述封装包括传感器芯片，还包括具有第一表面的第一基板和包括至少一个CMOS电路的第二表面; 具有第一表面和第二表面的MEMS衬底; 以及包括至少一个CMOS电路的第二衬底。 其中第一衬底的第一表面附接到封装衬底，并且第一衬底的第二表面附接到MEMS衬底的第一表面。 MEMS基板的第二表面附接到第二基板。 第一基板，MEMS基板，第二基板和封装基板机械地连接并设置有电连接。

    MONOLITHIC MEMS PLATFORM FOR INTEGRATED PRESSURE, TEMPERATURE, AND GAS SENSOR
    92.
    发明申请
    MONOLITHIC MEMS PLATFORM FOR INTEGRATED PRESSURE, TEMPERATURE, AND GAS SENSOR 有权
    用于一体化压力，温度和气体传感器的单片MEMS平台

    公开(公告)号：US20160266061A1

    公开(公告)日：2016-09-15

    申请号：US14645826

    申请日：2015-03-12

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Shao-Chi Yu ,  Chia-Ming Hung ,  Hsin-Ting Huang ,  Hsiang-Fu Chen ,  Wen-Chuan Tai

    IPC: G01N27/22 ,  B81B7/02 ,  B81C1/00 ,  G01L19/00

    CPC classification number: B81C1/00269 ,  B81B7/02 ,  B81B2201/0214 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/096 ,  B81C2203/0109 ,  G01K13/00 ,  G01L9/0073 ,  G01L19/0092 ,  G01N27/221 ,  G01N2027/222

    Abstract: The present disclosure is directed to a monolithic MEMS (micro-electromechanical system) platform having a temperature sensor, a pressure sensor and a gas sensor, and an associated method of formation. In some embodiments, the MEMS platform includes a semiconductor substrate having one or more transistor devices and a temperature sensor. A dielectric layer is disposed over the semiconductor substrate. A cavity is disposed within an upper surface of the dielectric layer. A MEMS substrate is arranged onto the upper surface of the dielectric layer and has a first section and a second section. A pressure sensor has a first pressure sensor electrode that is vertically separated by the cavity from a second pressure sensor electrode within the first section of a MEMS substrate. A gas sensor has a polymer disposed between a first gas sensor electrode within the second section of a MEMS substrate and a second gas sensor electrode.

    Abstract translation: 本公开涉及具有温度传感器，压力传感器和气体传感器的单片MEMS（微机电系统）平台以及相关联的形成方法。 在一些实施例中，MEMS平台包括具有一个或多个晶体管器件和温度传感器的半导体衬底。 电介质层设置在半导体衬底上。 空腔设置在电介质层的上表面内。 MEMS基板被布置在电介质层的上表面上并且具有第一部分和第二部分。 压力传感器具有第一压力传感器电极，其在MEMS衬底的第一部分内由空腔与第二压力传感器电极垂直分隔。 气体传感器具有设置在MEMS基板的第二部分内的第一气体传感器电极和第二气体传感器电极之间的聚合物。

    MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR
    94.
    发明申请
    MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR 审中-公开
    半导体基板上的单片集成多传感器器件及其方法

    公开(公告)号：US20160167953A1

    公开(公告)日：2016-06-16

    申请号：US15049339

    申请日：2016-02-22

    Applicant: Versana Micro Inc

    Inventor： BISHNU PRASANNA GOGOI

    IPC: B81B7/02

    CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

    Abstract: A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

    Abstract translation: 公开了一种单片集成多传感器（MIMS）。 MIM集成电路包括多个传感器。 例如，集成电路可以包括三个或更多个传感器，其中每个传感器测量不同的参数。 三个或更多个传感器可以共享一个或多个层以形成每个传感器结构。 在一个实施例中，三个或更多个传感器可以包括MEM传感器结构。 可以形成在MIM集成电路上的传感器的示例是惯性传感器，压力传感器，触觉传感器，湿度传感器，温度传感器，麦克风，力传感器，负载传感器，磁传感器， 流量传感器，光传感器，电场传感器，电阻抗传感器，电偶皮响应传感器，化学传感器，气体传感器，液体传感器，固体传感器和生物传感器。

    Monolithically integrated multi-sensor device on a semiconductor substrate and method therefor
    96.
    发明授权
    Monolithically integrated multi-sensor device on a semiconductor substrate and method therefor 有权
    半导体衬底上的单片集成多传感器器件及其方法

    公开(公告)号：US09266717B2

    公开(公告)日：2016-02-23

    申请号：US14207419

    申请日：2014-03-12

    Applicant: Versana Micro Inc.

    Inventor： Bishnu Prasanna Gogoi

    IPC: B81B7/02 ,  H01L27/14 ,  H01L27/22 ,  H01L27/16 ,  H05K7/02 ,  H01L41/113

    CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

    Abstract: An integrated circuit having an indirect sensor and a direct sensor formed on a common semiconductor substrate is disclosed. The direct sensor requires the parameter being measured to be directly applied to the direct sensor. Conversely, the indirect sensor can have the parameter being measured to be indirectly applied to the indirect sensor. The parameter being measured by the direct sensor is different than the parameter being measured by the indirect sensor. In other words, the direct sensor and indirect sensor are of different types. An example of a direct sensor is a pressure sensor. The pressure being measured by the pressure sensor must be applied to the pressure sensor. An example of an indirect sensor is an accelerometer. The rate of change of velocity does not have to be applied directly to the accelerometer. In one embodiment, the direct and indirect sensors are formed using photolithographic techniques.

    Abstract translation: 公开了一种具有间接传感器和形成在公共半导体衬底上的直接传感器的集成电路。 直接传感器需要测量的参数直接应用于直接传感器。 相反，间接传感器可以将被测量的参数间接地应用于间接传感器。 由直接传感器测量的参数与由间接传感器测量的参数不同。 换句话说，直接传感器和间接传感器是不同的类型。 直接传感器的一个例子是压力传感器。 由压力传感器测量的压力必须应用于压力传感器。 间接传感器的一个例子是加速度计。 速度变化率不必直接应用于加速度计。 在一个实施例中，使用光刻技术形成直接和间接传感器。

    BLACK SILICON-BASED HIGH-PERFORMANCE MEMS THERMOPILE IR DETECTOR AND FABRICATION METHOD
    98.
    发明申请
    BLACK SILICON-BASED HIGH-PERFORMANCE MEMS THERMOPILE IR DETECTOR AND FABRICATION METHOD 有权
    基于黑色硅的高性能MEMS热电偶红外探测器和制造方法

    公开(公告)号：US20150168221A1

    公开(公告)日：2015-06-18

    申请号：US14412408

    申请日：2013-01-21

    Applicant: JIANGSU R&D CENTER FOR INTERNET OF THINGS

    Inventor： Haiyang Mao ,  Wen Ou

    IPC: G01J5/12 ,  B81C1/00 ,  H01L35/34 ,  B81B7/02 ,  H01L35/32 ,  H01L35/22

    CPC classification number: G01J5/12 ,  B81B7/02 ,  B81B2201/0278 ,  B81C1/00111 ,  G01J5/022 ,  H01L35/22 ,  H01L35/32 ,  H01L35/34

    Abstract: This invention involves structure and fabrication method of a black silicon-based MEMS thermopile IR detector. The high-performance black silicon-based MEMS thermopile IR detector includes a substrate; a releasing barrier band on the substrate; a thermal isolation cavity constructed by the releasing barrier band; a black silicon-based IR absorber located right above the thermal isolation cavity; a number of thermocouples are set around the lateral sides of the black silicon-based IR absorber. The thermopiles around the black silicon-based IR absorber are electrically connected in series thus to form a thermopile. Metallic electrodes are located beside the electrically-connected thermopiles for signal output. The cold junctions of the thermopile are connected to the substrate through the first thermal-conductive-electrical-isolated structures, the heat conductor is located at the lateral sides of the thermal isolation cavity. The hot junctions of the thermopile are in contact with the IR absorber through the second thermal-conductive-electrical-isolated structures, and the second thermal-conductive-electrical-isolated structures are located above the releasing barrier band. The structure of such detector is simple, and it is easy to implement and can also be monolithicly integrated. Such detector has high responsivity and detection rate, and is CMOS-compatible, thus can be used widely in a safe and reliable manner.

    Abstract translation: 本发明涉及黑色硅基MEMS热电堆IR检测器的结构和制造方法。 高性能黑色硅基MEMS热电堆IR检测器包括基板; 衬底上的释放阻挡带; 由释放阻挡带构成的热隔离腔; 位于热隔离腔正上方的黑色硅基红外吸收体; 围绕黑色硅基IR吸收体的侧面设置多个热电偶。 黑色硅基IR吸收体周围的热电堆串联电连接形成热电堆。 金属电极位于电连接的热电堆旁边，用于信号输出。 热电堆的冷接头通过第一导热电隔离结构连接到基板，热导体位于热隔离腔的侧面。 热电堆的热接头通过第二导热电隔离结构与IR吸收体接触，第二导热电隔离结构位于释放阻挡带上方。 这种检测器的结构简单，易于实现，也可以整体集成。 这种检测器具有高响应度和检测率，并且兼容CMOS，因此可以安全可靠地广泛使用。

    DISTRIBUTED SENSOR SYSTEM
    100.
    发明申请
    DISTRIBUTED SENSOR SYSTEM 审中-公开
    分布式传感器系统

    公开(公告)号：US20140268524A1

    公开(公告)日：2014-09-18

    申请号：US14207477

    申请日：2014-03-12

    Applicant: BISHNU PRASANNA GOGOI

    Inventor： BISHNU PRASANNA GOGOI

    IPC: H05K7/02

    CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

    Abstract: A distributed sensor system is disclosed that provides spatial and temporal data in an operating environment. The distributed sensor nodes can be coupled together to form a distributed sensor system. For example, a distributed sensor system comprises a collection of Sensor Nodes (SN) that are physically coupled and are able to collect data about the environment in a distributed manner. An example of a distributed sensor system comprises a first sensor node and a second sensor node. Each sensor node has a plurality of sensors or a MIMS device. Each sensor node can also include electronic circuitry or a power source. A joint region is coupled between a first flexible interconnect region and a second flexible interconnect region. The first sensor node is coupled to the first flexible interconnect region. Similarly, the second sensor node is coupled to the second flexible interconnect region.

    Abstract translation: 公开了一种在操作环境中提供空间和时间数据的分布式传感器系统。 分布式传感器节点可以耦合在一起以形成分布式传感器系统。 例如，分布式传感器系统包括物理耦合并且能够以分布式方式收集关于环境的数据的传感器节点（SN）的集合。 分布式传感器系统的示例包括第一传感器节点和第二传感器节点。 每个传感器节点具有多个传感器或MIMS装置。 每个传感器节点还可以包括电子电路或电源。 联接区域耦合在第一柔性互连区域和第二柔性互连区域之间。 第一传感器节点耦合到第一柔性互连区域。 类似地，第二传感器节点耦合到第二柔性互连区域。

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