公开(公告)号：US20160268102A1

公开(公告)日：2016-09-15

申请号：US14645234

申请日：2015-03-11

Applicant: ASM IP Holding B.V.

Inventor： Carl Louis White ,  Eric James Shero ,  Mohith Verghese

IPC: H01J37/32 ,  B08B7/00 ,  C23C16/455

CPC classification number: H01J37/32449 ,  B08B7/00 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/4583 ,  H01J37/32458 ,  H01J37/32816

Abstract: Gas-phase reactors and systems are disclosed. Exemplary reactors include a reaction chamber having a tapered height. Tapering the height of the reactor is thought to reduce a pressure drop along the flow of gasses through the reactor. Exemplary reactors can also include a spacer within a gap to control a flow of gas between a region and a reaction chamber.

Abstract translation: 公开了气相反应器和系统。 示例性反应器包括具有锥形高度的反应室。 据认为，将反应器的高度缩小以减少沿着气体通过反应器的气流的压降。 示例性反应器还可以包括在间隙内的间隔物，以控制区域和反应室之间的气体流。

公开(公告)号：US20160217980A1

公开(公告)日：2016-07-28

申请号：US14852127

申请日：2015-09-11

Applicant: Hitachi High-Technologies Corporation

Inventor： Shintarou NAKATANI ,  Tsunehiko TSUBONE

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32449 ,  H01J37/32724 ,  H01J37/32816 ,  H01L21/67109 ,  H01L21/67253

Abstract: Provided is a plasma processing apparatus including a processing chamber which is disposed in a vacuum vessel and able to be decompressed, a sample stage on a top surface of which a wafer to be processed is mounted, an opening which is configured to supply a heat-transfer gas to a gap between the wafer and the top surface of the sample stage, a regulator which regulates a flow rate of the heat-transfer gas, and a controller which regulates an operation of the regulator based on a pressure of the gap detected using an amount of the heat-transfer gas leaking from the regulator to the processing chamber through the gap while the wafer is mounted on the sample stage and an amount of the heat-transfer gas supplied from the opening to the processing chamber while the wafer is not mounted on the sample stage.

Abstract translation: 本发明提供一种等离子体处理装置，其特征在于，包括处理室，该处理室设置在真空容器中，能够进行减压，其上表面上安装有待加工晶片的样品台， 将气体转移到晶片和样品台的顶表面之间的间隙，调节器，其调节传热气体的流速;以及控制器，其基于使用检测到的间隙的压力来调节调节器的操作 当晶片安装在样品台上时，从调节器通过间隙从调节器泄漏到处理室的一定量的传热气体，以及从晶片不是从开口供应到处理室的传热气体的量 安装在样品台上。

公开(公告)号：US20160163515A1

公开(公告)日：2016-06-09

申请号：US14903396

申请日：2014-07-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji Maruyama ,  Masato Horiguchi ,  Tetsuri Matsuki ,  Akira Koshiishi

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01J37/32165 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32568 ,  H01J37/32816 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02104 ,  H01L21/3065 ,  H01L21/67069

Abstract: A plasma processing apparatus includes a dielectric member having communication holes through which an internal space communicates with a processing space; a first electrode and a second electrode; a first gas supply device which supplies a first processing gas; a first high frequency power supply which supplies a first high frequency power to at least one of the electrodes to generate a first plasma of the first processing gas; a depressurizing device which introduces the first processing gas and radicals in the first plasma; a second high frequency power supply which supplies a second high frequency power to generate a second plasma of the first processing gas and to attract ions; and a control unit which adjusts, by controlling a total amount of the first high frequency powers, the radical amount in the second plasma and adjusts, by controlling a ratio therebetween, the ion amount therein.

Abstract translation: 等离子体处理装置包括具有连通孔的电介质构件，内部空间与处理空间连通; 第一电极和第二电极; 供给第一处理气体的第一气体供给装置; 第一高频电源，其向至少一个所述电极提供第一高频功率以产生所述第一处理气体的第一等离子体; 将第一处理气体和自由基引入第一等离子体的减压装置; 提供第二高频功率以产生第一处理气体的第二等离子体并吸引离子的第二高频电源; 以及控制单元，其通过控制第一高频功率的总量来调整第二等离子体中的自由基量，并通过控制其间的比例来调节其中的离子量。

公开(公告)号：US09293346B2

公开(公告)日：2016-03-22

申请号：US14385820

申请日：2013-03-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki Takaba ,  Hironori Matsuoka

IPC: H01L21/306 ,  H01L21/311 ,  H01L21/027 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/31138 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32449 ,  H01J37/32816 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/0276 ,  H01L21/67069

Abstract: In a method for etching an organic film according to an embodiment, a target object that has an organic film is set in a processing chamber. Then, a processing gas containing COS gas and O2 gas is supplied to the processing chamber and a microwave for plasma excitation is supplied to the inside of the processing chamber to etch the organic film.

Abstract translation: 在根据实施例的用于蚀刻有机膜的方法中，将具有有机膜的目标物体设置在处理室中。 然后，将含有COS气体和O 2气体的处理气体供给到处理室，并且将用于等离子体激发的微波供给到处理室的内部以蚀刻有机膜。

公开(公告)号：US20160049281A1

公开(公告)日：2016-02-18

申请号：US14458161

申请日：2014-08-12

Applicant: Lam Research Corporation

Inventor： Ivan L. Berry, III ,  Thorsten Lill ,  Kenneth Reese Reynolds

IPC: H01J37/36 ,  C23C16/458 ,  H01J37/32 ,  C23C16/46 ,  C23C16/52 ,  C23C16/50 ,  C23C16/455

CPC classification number: H01J37/36 ,  C23F4/00 ,  H01J37/3244 ,  H01J37/32816 ,  H01J37/32834

Abstract: One process that may be used to remove material from a surface is ion etching. In certain cases, ion etching involves delivery of both ions and a reactive gas to a substrate. The disclosed embodiments permit local high pressure delivery of reactive gas to a substrate while maintaining a much lower pressure on portions of the substrate that are outside of the local high pressure delivery area. The low pressure is achieved by confining the high pressure reactant delivery to a small area and vacuuming away excess reactants and byproducts as they leave this small area and before they enter the larger substrate processing region. The disclosed techniques may be used to increase throughput while minimizing deleterious collisions between ions and other species present in the substrate processing region.

Abstract translation: 可用于从表面去除材料的一种方法是离子蚀刻。 在某些情况下，离子蚀刻涉及将两种离子和反应性气体递送至基底。 所公开的实施例允许将反应性气体局部高压输送到衬底，同时在局部高压输送区域外的基底部分上保持低得多的压力。 通过将高压反应物输送限制在小面积上，并且当它们离开该小区域并在它们进入较大的基底处理区域之前，将多余的反应物和副产物抽真空而实现低压。 所公开的技术可以用于增加生产量，同时使存在于衬底处理区域中的离子和其它物质之间的有害碰撞最小化。

公开(公告)号：US20150255257A1

公开(公告)日：2015-09-10

申请号：US14440487

申请日：2013-10-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi Kawabe ,  Sensho Kobayashi

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32733 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/32899 ,  H01J2237/002 ,  H01J2237/334 ,  H01L21/67109 ,  H01L21/67201

Abstract: An objective of the present invention is to simplify a configuration of a processing chamber for cooling a substrate in a substrate processing device. In a plasma processing device (10) whereby a plasma process is carried out upon a wafer (W), the wafer (W) which is plasma processed is conveyed into a load-lock chamber (13), and gas is discharged from a gas discharge member (25) upon the surface of the wafer (W), cooling the wafer (W). The gas discharge member (25) comprises a structure wherein a plurality of gas discharge nozzles (35) are formed in one flat plate face of a flat plate member (31). The gas discharge nozzles (35) comprise cylindrical eddy generating chambers (41), and nozzle holes (42) which are opened in bottom walls (52) of the eddy generating chambers (41) and discharge the gas. The flat plate face of the wafer (W) and the flat plate face wherein the gas discharge nozzles (35) are formed in the flat plate member (31) are positioned in parallel at a prescribed gap. A purge gas is discharged from the nozzle holes (42) toward the wafer (W), and a flow of an eddy is made to arise in the discharged purge gas, thereby cooling the wafer (W), and simultaneously switching the interior of the load-lock chamber (13) from a vacuum environment to an atmospheric pressure environment.

Abstract translation: 本发明的目的是简化用于冷却衬底处理装置中的衬底的处理室的构造。 在等离子体处理装置（10）中，通过对晶片（W）进行等离子体处理，将等离子体处理的晶片（W）输送到负载锁定室（13），从气体中排出气体 放电构件（25）在晶片（W）的表面上，冷却晶片（W）。 气体排出构件（25）包括在平板构件（31）的一个平板面上形成有多个排气喷嘴（35）的结构。 排气喷嘴（35）包括圆筒形涡流发生室（41）和在涡流发生室（41）的底壁（52）中打开并排出气体的喷嘴孔。 晶片（W）的平板面和平板面，其中在平板构件（31）中形成气体排出喷嘴（35）的平板面以规定的间隙平行放置。 吹扫气体从喷嘴孔（42）朝向晶片（W）排出，并且在排出的净化气体中产生涡流，从而冷却晶片（W），同时切换 负载锁定室（13）从真空环境到大气压力环境。

公开(公告)号：US20150197847A1

公开(公告)日：2015-07-16

申请号：US14153658

申请日：2014-01-13

Applicant: Centre Luxembourgeois de Recherches pour le Verre et la Ceramique (C.R.V.C) SaRL

Inventor： Gilbert GALAN ,  Jean-Philippe USELDING ,  Guy COMANS ,  Marcel SCHLOREMBERG

IPC: C23C14/34 ,  H01J37/34

CPC classification number: C23C14/34 ,  H01J37/32816 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3417 ,  H01J37/342 ,  H01J37/3435 ,  H01J37/3497 ,  H01J2237/332

Abstract: An endblock for a rotatable sputtering target, such as a rotatable magnetron sputtering target, is provided. A sputtering apparatus, including one or more such endblock(s), includes locating the electrical contact(s) (e.g., brush(es)) between the collector and rotor in the endblock(s) in an area under vacuum (as opposed to in an area at atmospheric pressure).

Abstract translation: 提供了可旋转溅射靶的端块，例如可旋转磁控溅射靶。 包括一个或多个这样的端块的溅射装置包括将真空下的区域中的收集器和转子之间的电接触（例如，刷子）定位在端块中（与 在大气压的区域）。

公开(公告)号：US20150167171A1

公开(公告)日：2015-06-18

申请号：US14573765

申请日：2014-12-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide HASEBE ,  Akira SHIMIZU

IPC: C23C16/511 ,  C23C16/513

CPC classification number: C23C16/511 ,  C23C16/308 ,  C23C16/345 ,  C23C16/452 ,  H01J37/32082 ,  H01J37/32348 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32816

Abstract: A processing apparatus includes: a first active species generation unit including a first generation chamber where first active species are generated from a first gas by using silent discharge; a second active species generation unit including a second generation chamber where second active species are generated from a second gas by using at least one of inductively coupled plasma, capacitively coupled plasma and microwave plasma, the second active species generation unit being located downstream from the first active species generation unit and the first active species being supplied from the first generation chamber to the second generation chamber; and a processing chamber where a process is performed on an object to be processed by using the first and second active species supplied from the second generation chamber, the processing chamber being located downstream from the second active species generation unit.

Abstract translation: 一种处理装置，包括：第一活性物种生成单元，其包括第一生成室，其中通过使用静音放电从第一气体产生第一活性物质; 第二活性物种产生单元，其包括第二代室，其中通过使用电感耦合等离子体，电容耦合等离子体和微波等离子体中的至少一种从第二气体产生第二活性物质，所述第二活性物种产生单元位于第一 活性物种生成单元和从第一代室供应到第二代室的第一活性物质; 以及处理室，其中通过使用从第二代室提供的第一和第二活性物质对待处理物体进行处理，处理室位于第二活性物种生成单元的下游。

公开(公告)号：US09035553B2

公开(公告)日：2015-05-19

申请号：US13673513

申请日：2012-11-09

Applicant: Dae-Kyu Choi

Inventor： Dae-Kyu Choi

IPC: H01J7/24 ,  H01J37/32

CPC classification number: H01J37/32816 ,  H01J37/321

Abstract: A hybrid plasma reactor includes a reactor body having a plasma discharge space, a gas inlet, and a gas outlet; a hybrid plasma source including an inductive antenna inductively coupled to plasma formed in the plasma discharge space and a primary winding coil transformer coupled to the plasma and wound in a magnetic core; and an alternating switching power supply for supplying plasma generation power to the inductive antenna and the primary winding coil. The hybrid plasma reactor induces a plasma discharge using the inductively coupled plasma source and the transformer coupled plasma source, so that it has a wide operational area from a low pressure area to a high pressure area.

Abstract translation: 混合等离子体反应器包括具有等离子体放电空间的反应器主体，气体入口和气体出口; 混合等离子体源，包括感应耦合到等离子体放电空间中形成的等离子体的感应天线和耦合到等离子体并缠绕在磁芯中的初级绕组线圈变压器; 以及用于向感应天线和初级绕组线圈提供等离子体产生电力的交替开关电源。 混合等离子体反应器使用电感耦合等离子体源和变压器耦合的等离子体源诱导等离子体放电，使得其具有从低压区域到高压区域的宽操作区域。

公开(公告)号：US20150122776A1

公开(公告)日：2015-05-07

申请号：US14524303

申请日：2014-10-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shogo OKITA

IPC: B08B7/00

CPC classification number: H01J37/32697 ,  H01J37/3211 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32816 ,  H01J2237/002 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/78

Abstract: A dry etching apparatus plasma processes a wafer held by a carrier having a frame and an holding sheet. A electrode unit of a stage includes an electrostatic chuck. Adjacent to an upper surface of the electrostatic chuck, a first electrostatic attraction electrode and a second electrostatic attraction electrode are incorporated. The first electrostatic attraction electrode is of unipolar type and electrostatically attracts the wafer via the holding sheet. The second electrostatic electrode is of bipolar type and electrostatically attracts the frame via the holding sheet as well as a holding sheet between the wafer and the frame. Both of plasma processing performance and electrostatic attraction performance are improved.

Abstract translation: 干蚀刻装置等离子体处理由具有框架和保持片的载体保持的晶片。 舞台的电极单元包括静电卡盘。 在静电吸盘的上表面附近，并入有第一静电吸引电极和第二静电吸引电极。 第一静电吸引电极是单极型的，并通过保持片静电吸引晶片。 第二静电电极是双极型的，并且通过保持片静电吸引框架以及在晶片和框架之间的保持片。 提高了等离子体处理性能和静电吸引性能。